制造商是'Infineon'
Infineon 晶体管 - FET，MOSFET - 单个
(6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 额定电流 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 螺纹距离 | 配置 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 雪崩能量等级（Eas） | 恢复时间 | 最大结点温度（Tj） | 栅源电压 | 开关电流 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IRLR7843TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 140W Tc | 34 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 161A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 3.3MOhm | 30V | 鸥翼 | 260 | 161A | 30 | R-PSSO-G2 | Single | 增强型MOSFET | 140W | DRAIN | 25 ns | N-Channel | SWITCHING | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 42ns | ±20V | 19 ns | 161A | 2.3V | TO-252AA | 20V | 30V | 620A | 59 ns | 2.3 V | 2.2606mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||
 | IRFB4227PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 330W Tc | 21 ns | 通孔 | 通孔 | TO-220-3 | 3 | SILICON | 65A Tc | -40°C~175°C TJ | Tube | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 3 | 通孔 | EAR99 | 24MOhm | 1 | Single | 增强型MOSFET | 330W | DRAIN | 33 ns | N-Channel | SWITCHING | 24m Ω @ 46A, 10V | 5V @ 250μA | 4600pF @ 25V | 98nC @ 10V | 20ns | ±30V | 31 ns | 65A | 5V | TO-220AB | 30V | 200V | 260A | 200V | 150 ns | 175°C | 5 V | 19.8mm | 10.6426mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| IRFR024NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 45W Tc | 19 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 17A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 75mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | 鸥翼 | 17A | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 38W | DRAIN | 4.9 ns | N-Channel | SWITCHING | 75m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | ±20V | 27 ns | 17A | 4V | TO-252AA | 20V | 55V | 68A | 55V | 83 ns | 175°C | 4 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||
| IRFR5410TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 66W Tc | 45 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 13A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 205mOhm | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | -100V | 鸥翼 | 260 | -13A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 66W | DRAIN | 15 ns | P-Channel | SWITCHING | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 100V | ±20V | 46 ns | -13A | -4V | TO-252AA | 20V | -100V | 52A | -100V | 190 ns | 150°C | -4 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||
 | IRF9540NSTRLPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 3.1W Ta 110W Tc | 40 ns | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | 23A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 117mOhm | AVALANCHE RATED, HIGH RELIABILITY | -100V | 鸥翼 | 260 | -23A | 30 | R-PSSO-G2 | 1 | 100V | Single | 23A | 增强型MOSFET | 3.8W | DRAIN | 13 ns | P-Channel | SWITCHING | 117m Ω @ 14A, 10V | 4V @ 250μA | 1450pF @ 25V | 110nC @ 10V | 67ns | ±20V | 51 ns | -23A | -4V | 20V | -100V | 100V | 84 mJ | 210 ns | 150°C | -4 V | 5.084mm | 10.668mm | 9.65mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||
| IRF4905STRLPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 170W Tc | 51 ns | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | D2Pak | 42A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 20mOhm | HIGH RELIABILITY, AVALANCHE RATED | -55V | 鸥翼 | 260 | -74A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 3.8W | DRAIN | 20 ns | P-Channel | SWITCHING | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 99ns | 55V | ±20V | 64 ns | -42A | -2V | 20V | -55V | 280A | -55V | 92 ns | 150°C | -4 V | 4.83mm | 10.54mm | 10.54mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||
| IRFR6215TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 110W Tc | 53 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 13A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 295mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | 雪崩 额定 | -150V | 鸥翼 | 260 | -13A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 110W | DRAIN | 14 ns | P-Channel | SWITCHING | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 150V | ±20V | 37 ns | -13A | -4V | TO-252AA | 20V | -150V | 44A | -150V | 240 ns | 175°C | -4 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||
| IRFR5505TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 57W Tc | 20 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 18A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 110mOhm | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | -55V | 鸥翼 | 260 | -18A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 57W | DRAIN | 12 ns | P-Channel | SWITCHING | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 650pF @ 25V | 32nC @ 10V | 28ns | 55V | ±20V | 16 ns | -18A | -4V | TO-252AA | 20V | -55V | 64A | -55V | 77 ns | 150°C | -4 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||
 | IRLL014NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4V 10V | 1 | 1W Ta | 14 ns | Tin | 表面贴装 | 表面贴装 | TO-261-4, TO-261AA | 3 | SILICON | 2A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 4 | EAR99 | 200mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | DUAL | 鸥翼 | 2A | R-PDSO-G4 | Single | 增强型MOSFET | 2.1W | DRAIN | 5.1 ns | N-Channel | SWITCHING | 140m Ω @ 2A, 10V | 2V @ 250μA | 230pF @ 25V | 14nC @ 10V | 4.9ns | ±16V | 2.9 ns | 2A | 2V | 16V | 2A | 55V | 55V | 61 ns | 2 V | 1.4478mm | 6.6802mm | 3.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||
| IRFR220NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 43W Tc | 20 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 5A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 600MOhm | 200V | 鸥翼 | 260 | 5A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 43W | DRAIN | 6.4 ns | N-Channel | SWITCHING | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 11ns | ±20V | 12 ns | 5A | 4V | TO-252AA | 20V | 5A | 200V | 20A | 200V | 46 mJ | 140 ns | 175°C | 4 V | 5A | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||
 | IRFP260NPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 300W Tc | 55 ns | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 50A Tc | -55°C~175°C TJ | Bulk | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 3 | 通孔 | EAR99 | 40mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 200V | 250 | 50A | 30 | Single | 增强型MOSFET | 300W | DRAIN | 17 ns | N-Channel | SWITCHING | 40m Ω @ 28A, 10V | 4V @ 250μA | 4057pF @ 25V | 234nC @ 10V | 60ns | ±20V | 48 ns | 50A | 4V | TO-247AC | 20V | 200V | 200A | 200V | 560 mJ | 402 ns | 4 V | 20.2946mm | 15.875mm | 5.3mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||
| IRFR9024NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 38W Tc | 23 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 11A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 175mOhm | AVALANCHE RATED, HIGH RELIABILITY | -55V | 鸥翼 | 260 | -11A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 38W | DRAIN | 13 ns | P-Channel | SWITCHING | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 55ns | ±20V | 37 ns | -11A | -4V | TO-252AA | 20V | -55V | 44A | 55V | 62 mJ | 71 ns | 150°C | -4 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||
| IRLR2905TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4V 10V | 1 | 110W Tc | 26 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 42A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2000 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 27mOhm | 雪崩 额定 | 55V | 鸥翼 | 260 | 41A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 69W | DRAIN | 11 ns | N-Channel | SWITCHING | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | ±16V | 15 ns | 42A | 2V | TO-252AA | 16V | 20A | 55V | 55V | 120 ns | 175°C | 2 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||
| IRFR9120NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 40W Tc | 28 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 6.6A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 480mOhm | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | -100V | 鸥翼 | 260 | -6.6A | 30 | R-PSSO-G2 | Single | 增强型MOSFET | 40W | DRAIN | 14 ns | P-Channel | SWITCHING | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 47ns | ±20V | 31 ns | -6.6A | -4V | TO-252AA | 20V | -100V | 26A | 100V | 150 ns | -4 V | 2.3876mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||
| IRLR024NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4V 10V | 1 | 45W Tc | 20 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 17A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 80mOhm | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 55V | 鸥翼 | 260 | 17A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 45W | DRAIN | 7.1 ns | N-Channel | SWITCHING | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | ±16V | 29 ns | 17A | 2V | TO-252AA | 16V | 55V | 72A | 55V | 68 mJ | 90 ns | 175°C | 2 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||
| IRLL2705TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4V 10V | 1 | 1W Ta | 35 ns | 表面贴装 | 表面贴装 | TO-261-4, TO-261AA | 3 | SILICON | 3.8A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 4 | EAR99 | 40mOhm | Matte Tin (Sn) | 逻辑电平兼容 | 55V | DUAL | 鸥翼 | 260 | 3.8A | 30 | R-PDSO-G4 | 1 | Single | 增强型MOSFET | 2.1W | DRAIN | 6.2 ns | N-Channel | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 870pF @ 25V | 48nC @ 10V | 12ns | ±16V | 22 ns | 3.8A | 2V | 16V | 5.2A | 55V | 55V | 88 ns | 150°C | 2 V | 1.8mm | 6.6802mm | 6.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||
 | IRF7425TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2.5V 4.5V | 1 | 2.5W Ta | 230 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 15A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 8.2MOhm | -20V | DUAL | 鸥翼 | 260 | -15A | 30 | 1 | Single | 增强型MOSFET | 2.5W | 13 ns | P-Channel | SWITCHING | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 20ns | ±12V | 160 ns | -15A | -1.2V | 12V | -20V | 60A | 20V | 180 ns | 150°C | 1.2 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||
| IRF540NSTRLPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 130W Tc | 39 ns | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | 33A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 44MOhm | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 100V | 鸥翼 | 260 | 33A | 30 | R-PSSO-G2 | Single | 增强型MOSFET | 130W | DRAIN | 11 ns | N-Channel | SWITCHING | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 35ns | ±20V | 35 ns | 33A | 4V | 20V | 100V | 100V | 170 ns | 4 V | 4.826mm | 10.668mm | 9.65mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||
| IRLL024NTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4V 10V | 1 | 1W Ta | 18 ns | Tin | 表面贴装 | 表面贴装 | TO-261-4, TO-261AA | 3 | SILICON | IRLL024NTRPBF | 3.1A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | 活跃 | 1 (Unlimited) | 4 | EAR99 | 65mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | DUAL | 鸥翼 | 3.1A | R-PDSO-G4 | 1 | Single | 增强型MOSFET | 2.1W | DRAIN | 7.4 ns | N-Channel | SWITCHING | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 510pF @ 25V | 15.6nC @ 5V | 21ns | ±16V | 25 ns | 3.1A | 2V | 16V | 55V | 55V | 58 ns | 150°C | 2 V | 1.8mm | 6.6802mm | 3.7mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||
| IRF9Z34NSTRLPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 3.8W Ta 68W Tc | 30 ns | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | 19A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 100mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY | -55V | 鸥翼 | 260 | -19A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 68W | DRAIN | 13 ns | P-Channel | SWITCHING | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | ±20V | 41 ns | -19A | -2V | 20V | -55V | 68A | 55V | 82 ns | 175°C | -4 V | 4.83mm | 10.668mm | 9.65mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||
| IRFR3710ZTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 140W Tc | 53 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 42A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 18MOhm | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 100V | 鸥翼 | 260 | 42A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 140W | DRAIN | 14 ns | N-Channel | SWITCHING | 18m Ω @ 33A, 10V | 4V @ 250μA | 2930pF @ 25V | 100nC @ 10V | 43ns | ±20V | 42 ns | 42A | 4V | TO-252AA | 20V | 100V | 220A | 100V | 53 ns | 175°C | 2 V | 2.52mm | 6.1976mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||
| IRF5210STRLPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 3.1W Ta 170W Tc | 72 ns | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | SILICON | 38A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 60mOhm | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | -100V | 鸥翼 | 260 | -40A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 3.8W | DRAIN | 14 ns | P-Channel | SWITCHING | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 63ns | ±20V | 55 ns | -40A | -4V | 20V | -100V | 100V | 260 ns | 150°C | -4 V | 4.83mm | 10.668mm | 9.65mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||
| IRF9530NPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 79W Tc | 45 ns | Tin | 通孔 | 通孔 | TO-220-3 | 3 | SILICON | 14A Tc | -55°C~175°C TJ | Tube | 1998 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 3 | 通孔 | EAR99 | 200mOhm | AVALANCHE RATED, HIGH RELIABILITY | -100V | 250 | -14A | 30 | 2.54mm | Single | 增强型MOSFET | 79W | DRAIN | 15 ns | P-Channel | SWITCHING | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 100V | ±20V | 46 ns | -14A | -4V | TO-220AB | 20V | -100V | 56A | -100V | 250 mJ | 190 ns | -4 V | 15.24mm | 10.5156mm | 4.69mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||
| IRLR3110ZTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 140W Tc | 33 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 42A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 14MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | SINGLE | 鸥翼 | 260 | 30 | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | 1 | 增强型MOSFET | 140W | DRAIN | 24 ns | N-Channel | SWITCHING | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | ±16V | 48 ns | 42A | TO-252AA | 16V | 100V | 250A | 175°C | 2.52mm | 6.7056mm | 6.22mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| IRLR2908TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 120W Tc | 36 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 30A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 28mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 80V | 鸥翼 | 260 | 30A | 30 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 120W | DRAIN | 12 ns | N-Channel | SWITCHING | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 1890pF @ 25V | 33nC @ 4.5V | 95ns | ±16V | 55 ns | 30A | 1V | TO-252AA | 16V | 80V | 80V | 250 mJ | 175°C | 1 V | 2.52mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |