制造商是'HARRIS'
HARRIS 晶体管 - FET，MOSFET - 单个
(382)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 终端数量 | 晶体管元件材料 | 厂商 | 操作温度 | 系列 | JESD-609代码 | 无铅代码 | 端子表面处理 | 附加功能 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 箱体转运 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 漏源电压 (Vdss) | Vgs（最大值） | 极性/通道类型 | JEDEC-95代码 | 漏极-源极导通最大电阻 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 场效应管特性 | |||||||||||||||||||||
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 | IRFP243 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | Bulk | 10V | 18A (Tc) | 150W (Tc) | Non-Compliant | TO-247, 3 PIN | FLANGE MOUNT | 未说明 | PLASTIC/EPOXY | 未说明 | 无 | IRFP243 | RECTANGULAR | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.38 | TO-247 | 18 A | TO-247-3 | NO | TO-247 | 3 | SILICON | Harris Corporation | 活跃 | -55°C ~ 150°C (TJ) | - | e0 | 无 | 锡铅 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 220mOhm @ 10A, 10V | 4V @ 250μA | 1275 pF @ 25 V | 60 nC @ 10 V | 150 V | ±20V | N-CHANNEL | TO-247 | 0.22 Ω | 72 A | 150 V | 510 mJ | METAL-OXIDE SEMICONDUCTOR | - | |||
| IRFP245 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 14A (Tc) | 10V | 150W (Tc) | Non-Compliant | FLANGE MOUNT | 未说明 | PLASTIC/EPOXY | 未说明 | 无 | IRFP245 | RECTANGULAR | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.35 | 14 A | TO-247-3 | NO | TO-247 | 3 | SILICON | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | e0 | 无 | 锡铅 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 340mOhm @ 10A, 10V | 4V @ 250μA | 1300 pF @ 25 V | 59 nC @ 10 V | 250 V | ±20V | N-CHANNEL | TO-247 | 0.34 Ω | 56 A | 250 V | 550 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||||||
| 2N7224JANTXV | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 34A (Tc) | 10V | 4W (Ta), 150W (Tc) | 2N7224JANTXV | Omnirel Corp | Obsolete | OMNIREL CORP | 5.55 | TO-254-3, TO-254AA | TO-254AA | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | unknown | N-Channel | 81mOhm @ 34A, 10V | 4V @ 250μA | 125 nC @ 10 V | 100 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||
| RFP25N06L | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 25A (Tc) | 5V | 75W (Tc) | TO-220-3 | TO-220 | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 85mOhm @ 12.5A, 5V | 2V @ 1mA | 2000 pF @ 25 V | 60 V | ±10V | - | ||||||||||||||||||||||||||||||||||||||||||||
| RFP8N18L | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | Bulk | 5V | 8A (Tc) | 60W (Tc) | TO-220-3 | TO-220AB | Harris Corporation | 活跃 | -55°C ~ 150°C (TJ) | - | N-Channel | 500mOhm @ 4A, 5V | 2V @ 1mA | 900 pF @ 25 V | 180 V | ±10V | - | ||||||||||||||||||||||||||||||||||||||||||||
| RFD14N06LSM9A | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Harris Corporation | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFM15N05L | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 15A (Tc) | 5V | 75W (Tc) | TO-204AA, TO-3 | TO-3 | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 140mOhm @ 7.5A, 5V | 900 pF @ 25 V | 50 V | ±10V | - | |||||||||||||||||||||||||||||||||||||||||||||
| HUF76132S3 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Harris Corporation | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD10N05SM | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 活跃 | - | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Harris Corporation | Bulk | - | - | N-Channel | - | - | 50 V | - | - | |||||||||||||||||||||||||||||||||||||||||||||
| RLD03N06CLE | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Harris Corporation | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFM10N50 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 10A (Tc) | 10V | 150W (Tc) | TO-204AA, TO-3 | TO-3 | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 600mOhm @ 5A, 10V | 4V @ 1mA | 3000 pF @ 25 V | 500 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||||
| HUF76121S3 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Harris Corporation | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76129P3 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | Bulk | 4.5V, 10V | 56A (Tc) | 105W (Tc) | TO-220-3 | TO-220AB | Harris Corporation | 活跃 | -40°C ~ 150°C (TJ) | N-Channel | 16Ohm @ 56A, 10V | 3V @ 250μA | 1350 pF @ 25 V | 45 nC @ 10 V | 30 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||||
| RF1S530SM9A | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Bulk | Harris Corporation | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9522 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 5A (Tc) | 10V | 40W (Tc) | Non-Compliant | TO-220-3 | TO-220AB | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | P-Channel | 800mOhm @ 3.5A, 10V | 4V @ 250μA | 300 pF @ 25 V | 22 nC @ 10 V | 100 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7292 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 25A (Tc) | 10V | 125W (Tc) | FLANGE MOUNT | METAL | JANSR2N7292 | SQUARE | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.38 | 25 A | TO-254-3, TO-254AA | NO | TO-254AA | 3 | SILICON | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | 未说明 | 辐射硬化 | SINGLE | PIN/PEG | unknown | MILITARY STANDARD (USA) | S-MSFM-P3 | MILITARY | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-Channel | 70mOhm @ 20A, 10V | 5V @ 1mA | 552 nC @ 20 V | 100 V | ±20V | N-CHANNEL | TO-254AA | 0.14 Ω | 75 A | 100 V | METAL-OXIDE SEMICONDUCTOR | - | |||||||||||||||
| RFL1N12 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 1A (Tc) | 10V | 8.33W (Tc) | TO-205AF Metal Can | TO-205AF (TO-39) | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 1.9Ohm @ 1A, 10V | 4V @ 250μA | 200 pF @ 25 V | 120 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||||
| RF1S30P06SM | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 30A | 活跃 | Bulk | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | Harris Corporation | - | - | - | P-Channel | - | - | 60 V | - | - | |||||||||||||||||||||||||||||||||||||||||||||
| IRFF111 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 3.5A (Tc) | 10V | 15W (Tc) | Non-Compliant | CYLINDRICAL | 未说明 | METAL | 未说明 | 无 | IRFF111 | ROUND | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.38 | 3.5 A | TO-205AF Metal Can | NO | TO-205AF (TO-39) | 3 | SILICON | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | e0 | 无 | 锡铅 | BOTTOM | WIRE | 未说明 | unknown | O-MBCY-W3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 600mOhm @ 1.5A, 10V | 4V @ 250μA | 135 pF @ 25 V | 7.5 nC @ 10 V | 80 V | ±20V | N-CHANNEL | TO-205AF | 0.6 Ω | 14 A | 80 V | METAL-OXIDE SEMICONDUCTOR | - | |||||||
| IRF743 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 8A (Tc) | 10V | 125W (Tc) | Non-Compliant | TO-220-3 | TO-220 | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 800mOhm @ 5.2A, 10V | 4V @ 250μA | 1250 pF @ 25 V | 63 nC @ 10 V | 350 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||
| IRFD323 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 400mA (Tc) | 10V | 1W (Tc) | Non-Compliant | IN-LINE | 未说明 | PLASTIC/EPOXY | 未说明 | 无 | IRFD323 | RECTANGULAR | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.4 | 0.4 A | 4-DIP (0.300", 7.62mm) | NO | 4-DIP, Hexdip | 3 | SILICON | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | e0 | 无 | 锡铅 | DUAL | THROUGH-HOLE | 未说明 | unknown | R-PDIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-Channel | SWITCHING | 2.5Ohm @ 250mA, 10V | 4V @ 250μA | 455 pF @ 25 V | 15 nC @ 10 V | 350 V | ±20V | N-CHANNEL | 2.5 Ω | 350 V | METAL-OXIDE SEMICONDUCTOR | - | ||||||||||
| RFH30N12 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 30A (Tc) | 10V | 150W (Tc) | TO-218-3 Isolated Tab, TO-218AC | TO-218 Isolated | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 75mOhm @ 15A, 10V | 4V @ 1mA | 3000 pF @ 25 V | 120 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||||
| RFH10N50 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 10A (Tc) | 10V | 150W (Tc) | TO-218-3 Isolated Tab, TO-218AC | TO-218 Isolated | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | N-Channel | 600mOhm @ 5A, 10V | 4V @ 1mA | 3000 pF @ 25 V | 500 V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||||
| IRF642R | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 16A (Tc) | 10V | 125W (Tc) | FLANGE MOUNT | 未说明 | PLASTIC/EPOXY | 未说明 | 无 | IRF642R | RECTANGULAR | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.26 | 16 A | TO-220-3 | NO | TO-220AB | 3 | SILICON | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | e0 | 无 | 锡铅 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 220mOhm @ 10A, 10V | 4V @ 250μA | 1275 pF @ 25 V | 64 nC @ 10 V | 200 V | ±20V | N-CHANNEL | TO-220AB | 0.22 Ω | 64 A | 200 V | 580 mJ | METAL-OXIDE SEMICONDUCTOR | - | |||||||
| IRFP251 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 活跃 | 33A (Tc) | 10V | 180W (Tc) | Non-Compliant | FLANGE MOUNT | 未说明 | PLASTIC/EPOXY | 未说明 | 无 | IRFP251 | RECTANGULAR | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.37 | 33 A | TO-247-3 | NO | TO-247 | 3 | SILICON | Harris Corporation | Bulk | -55°C ~ 150°C (TJ) | - | e0 | 无 | 锡铅 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 85mOhm @ 17A, 10V | 4V @ 250μA | 2000 pF @ 25 V | 120 nC @ 10 V | 150 V | ±20V | N-CHANNEL | TO-247 | 0.085 Ω | 130 A | 150 V | METAL-OXIDE SEMICONDUCTOR | - |