类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||
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![]() | SST25VF080B-50-4C-QAF-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST25 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 1 | 1.27mm | SST25VF080B | 3.3V | 3.6V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 50MHz | 0.03mA | FLASH | SPI | 1 | 10μs | 8 Mb | 0.00002A | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 6mm | 5mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62C10248AL-55TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 哑光锡 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 40 | 44 | 5V | 5V | 8Mb 1M x 8 | 1 | 25mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 20b | 8 Mb | 0.00006A | 55 ns | COMMON | Asynchronous | 8b | 2V | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29W400DT55N6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2008 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | SMD/SMT | EAR99 | 哑光锡 | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 30 | M29W400 | 48 | 3/3.3V | 2.7V | 4Mb 512K x 8 256K x 16 | 10mA | FLASH | Parallel | 256KX16 | 16 | 55ns | 4 Mb | 0.0001A | 55 ns | Asynchronous | 8 | YES | YES | YES | 1217 | 16K8K32K64K | YES | TOP | 1.2mm | 18.4mm | 12mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC56CT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 3V | 0.5mm | 93LC56C | 8 | 5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 8 | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC66B-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66B | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25VF080B-80-4I-QAE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | SST25 | e3 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST25VF080B | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 20mA | 80MHz | 6 ns | FLASH | SPI | 8b | 8 | 10μs | 1b | 8 Mb | 0.00002A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28BV256-20JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 2 (1 Year) | 32 | 2.7V~3.6V | QUAD | 1 | 3V | 1.27mm | R-PQCC-J32 | 3.6V | 2.7V | 256Kb 32K x 8 | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | 3V | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC32AF-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC32AF | 8 | 5V | I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1354C-166AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2002 | NoBL™ | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 250 | 1 | 3.3V | 0.65mm | 40 | CY7C1354 | 100 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 180mA | 166MHz | 3.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 18b | 9 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 14mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA46B-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 小概要 | 1 | 64 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 85 °C | 有 | 93AA46B-I/SNG | 1 MHz | 64 words | 2.5 V | SOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.08 | SOIC | 表面贴装 | YES | 8 | 8 | Compliant | Bulk | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 1 MHz | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.8 V | Serial | 5.5 V | 1.8 V | 128 B | 2 mA | SYNCHRONOUS | 0.002 mA | 64X16 | 1.75 mm | 16 | 1 kb | 0.000001 A | 1024 bit | 1 MHz | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 6 ms | 200 | SOFTWARE | 4.9 mm | 3.9 mm | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST38VF6403-90-5C-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2010 | SST38 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST38VF6403 | 48 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 18mA | 90ns | FLASH | Parallel | 16b | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00003A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 4K | 4words | YES | BOTTOM | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC76C-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC76C | 8 | 5.5V | 3/5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA160DT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25AA160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC86AT-I/OTG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | 1 | 2000 | PLASTIC/EPOXY | TSOP5/6,.11,37 | -40 °C | 40 | 85 °C | 有 | 93LC86AT-I/OTG | 2 MHz | 2048 words | 3 V | LSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.13 | SOT-23 | YES | 6 | ROHS COMPLIANT, PLASTIC, SOT-23, 6 PIN | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.95 mm | compliant | 6 | R-PDSO-G6 | 不合格 | 5.5 V | 3/5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.003 mA | 2KX8 | 1.45 mm | 8 | 0.000001 A | 16384 bit | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 5 ms | 200 | SOFTWARE | 2.9 mm | 1.55 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA46AT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | 93AA46A | 8 | 5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST38VF6402-90-5C-EKE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2010 | SST38 | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) - annealed | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST38VF6402 | 48 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 18mA | 90ns | FLASH | Parallel | 16b | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00003A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 4K | 4words | YES | TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC04BH-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24LC04BH | 8 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 5ms | 4 kb | 0.000005A | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 1.5mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC46B/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.635mm | 40 | 93LC46B | 8 | 5.5V | 6V | 3/5V | 2.5V | 2-Wire, Serial | 1Kb 64 x 16 | 2mA | 2MHz | 6 ms | EEPROM | SPI | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 1.05mm | 3.1mm | 4.5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC1026-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24LC1026 | 8 | 5.5V | 2.5V | 2-Wire, I2C, Serial | 1Mb 128K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 1 Mb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDMR | NO | 1.5mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC66CT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93LC66C | 8 | 5.5V | 3/5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA160-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 25AA160 | 8 | 5.5V | 2/5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 1MHz | 475 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11LC010T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC010 | 8 | 5V | Serial | 1Kb 128 x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 1 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 750μm | 3mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62177EV30LL-55ZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) | 2.2V~3.7V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | CY62177 | 48 | 3V | 3.7V | 2.2V | 32Mb 4M x 8 2M x 16 | 1 | 45mA | 45mA | SRAM | Parallel | 3-STATE | 55ns | 21b | 32 Mb | 55 ns | COMMON | Asynchronous | 1.2mm | 18.4mm | 12mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST26VF064BT-104I/SO | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 16 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | SST26VF064 | 3V | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 64 Mb | 3V | 256B | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CYDMX128A16-65BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-VFBGA | 100 | Volatile | -40°C~85°C TA | Tray | 2011 | e1 | Obsolete | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.8V~3.3V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 30 | CYDMX | 100 | 1.9V | 1.8/3V | 1.7V | 128Kb 8K x 16 | 2 | 70mA | SRAM | Parallel | 8KX16 | 3-STATE | 16 | 65ns | 13b | 128 kb | 0.000006A | 65 ns | COMMON | Asynchronous | 16b | 1mm | 6mm | 无 | ROHS3 Compliant | 含铅 |