类别是'专用'
专用 (1453)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | Date Of Intro | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 内存IC类型 | 混合内存类型 | 长度 | 宽度 | |||||||||||||||||
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![]() | RD38F3352LLZDQ0 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | NUMONYX | FBGA, BGA88,8X12,32 | 88 ns | PLASTIC/EPOXY | FBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | 88 | 无 | EAR99 | 8542.32.00.71 | BOTTOM | BALL | 0.8 mm | unknown | R-PBGA-B88 | 不合格 | 0.035 mA | 存储器电路 | FLASH+PSRAM | |||||||||||||||||||||||||||
![]() | TH50VSF0302BCXB | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | TOSHIBA CORP | BGA, BGA48,6X8,40 | 100 ns | 85 °C | -20 °C | PLASTIC/EPOXY | BGA | BGA48,6X8,40 | RECTANGULAR | 网格排列 | 48 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | BOTTOM | BALL | 1 mm | unknown | R-PBGA-B48 | 不合格 | OTHER | 0.04 mA | 0.00003 A | 存储器电路 | FLASH+SRAM | ||||||||||||||||||||||
![]() | MD5811-D256-V3Q18-X-P | M-Systems Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | M-SYSTEMS CORP | , | 有 | EAR99 | 8542.32.00.71 | 260 | unknown | |||||||||||||||||||||||||||||||||||||||||||
![]() | SST30VR021-500-C-WH | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SILICON STORAGE TECHNOLOGY INC | TSOP1 | TSOP1, TSSOP32,.56,20 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3 V | 32 | 无 | e0 | EAR99 | 锡铅 | ALSO CONTAINS 128K X 8 SRAM | 8542.32.00.71 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | 不合格 | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.0065 mA | 256KX8 | 1.2 mm | 8 | 0.00001 A | 2097152 bit | 存储器电路 | ROM+SRAM | 12.4 mm | 8 mm | ||||||||
![]() | M36W0R6050B1ZAQF | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | STMICROELECTRONICS | BGA | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 | 70 ns | 4194304 words | 4000000 | 85 °C | -30 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 有 | e1 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 88 | R-PBGA-B88 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 4MX16 | 1.2 mm | 16 | 67108864 bit | 存储器电路 | FLASH+PSRAM | 10 mm | 8 mm | ||||||||
![]() | M36W0R6050B1ZAQF | Micron Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA88,8X12,32 | 70 ns | 4194304 words | 4000000 | 85 °C | -30 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 有 | e1 | 有 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 2M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 88 | R-PBGA-B88 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 4MX16 | 1.2 mm | 16 | 67108864 bit | 存储器电路 | FLASH+PSRAM | 10 mm | 8 mm | |||||||
![]() | S71GL032NA0BFW0Z0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56 | 3 | 2097152 words | 2000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | 56 | 有 | e1 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 1M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 56 | R-PBGA-B56 | 不合格 | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | 2MX16 | 1.2 mm | 16 | 33554432 bit | 存储器电路 | 9 mm | 7 mm | ||||||||
![]() | S71JL064HA0BAW110 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | BGA | LFBGA, BGA73,10X12,32 | 70 ns | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 73 | 有 | EAR99 | PSRAM IS ORGANIZED AS 1M X 16; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | 8542.32.00.71 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | 未说明 | 73 | R-PBGA-B73 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.045 mA | 4MX16 | 1.4 mm | 16 | 67108864 bit | 存储器电路 | FLASH+PSRAM | 11.6 mm | 8 mm | |||||||
![]() | S71JL064HA0BAW110 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | LFBGA, | 3 | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 73 | 无 | e0 | EAR99 | 锡铅 | PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 73 | R-PBGA-B73 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.4 mm | 16 | 67108864 bit | 存储器电路 | 11.6 mm | 8 mm | ||||||||||
![]() | M4-4112S-Z2 | Moujen Switch | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RD38F2030W0ZTQ0 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | INTEL CORP | BGA | TFBGA, BGA88,8X12,32 | 70 ns | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 无 | e0 | 无 | EAR99 | 锡铅 | CONTAINS 16 MBIT SRAM, ALSO CONTAINS 64 MBIT FLASH | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 88 | R-PBGA-B88 | 不合格 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 0.055 mA | 4MX16 | 1.2 mm | 16 | 0.000015 A | 67108864 bit | 存储器电路 | FLASH+SRAM | 10 mm | 8 mm | |||||
![]() | MCM66734P | Motorola Semiconductor Products | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | MOTOROLA INC | 70 °C | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | 24 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T24 | 不合格 | COMMERCIAL | |||||||||||||||||||||||||||||
![]() | XC17S05XLPDG8C | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 54544 words | 54544 | 70 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 3.3 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 54544X1 | 4.5974 mm | 1 | 54544 bit | 存储器电路 | 9.3599 mm | 7.62 mm | |||||||||
![]() | S72NS512RD0AHGL43 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S71WS128NC0BFWA70 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 11.60 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 84 | 有 | e1 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 4M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 8MX16 | 1.2 mm | 16 | 134217728 bit | 存储器电路 | FLASH+PSRAM | 11.6 mm | 8 mm | ||||||
![]() | M4-4102S-Z3 | Moujen Switch | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SSDSC2BA800G401 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | INTEL CORP | 2018-07-27 | 活跃 | EAR99 | 8542.32.00.71 | compliant | 存储器电路 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | S71PL127JB0BFWQB0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64 | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | 64 | 有 | e1 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 64 | R-PBGA-B64 | 不合格 | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 8MX16 | 1.2 mm | 16 | 134217728 bit | 存储器电路 | 11.6 mm | 8 mm | ||||||||||
![]() | S71JL064HB0BAW01 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | ADVANCED MICRO DEVICES INC | FBGA, BGA73,10X12,32 | 70 ns | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 3 V | 73 | 有 | EAR99 | 8542.32.00.71 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B73 | 不合格 | OTHER | 存储器电路 | FLASH+SRAM | |||||||||||||||||||||||||
![]() | MD2200-D16 | M-Systems Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST34WA1601-70-5E-MVJE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | SILICON STORAGE TECHNOLOGY INC | BGA | VFBGA, | 1048576 words | 1000000 | 85 °C | -20 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 44 | 有 | EAR99 | ZERO DENSITY PSRAM | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 44 | R-PBGA-B44 | 不合格 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 1MX16 | 1 mm | 16 | 16777216 bit | 存储器电路 | 8 mm | 6 mm | |||||||||||
![]() | XC17S20PDG8C | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 178144 words | 178144 | 70 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | 178144X1 | 4.5974 mm | 1 | 178144 bit | 存储器电路 | 9.3599 mm | 7.62 mm | |||||||||
![]() | SST32HF3242C-70-4E-LFS | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 2097152 words | 2000000 | 85 °C | -20 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 63 | 无 | EAR99 | SRAM IS ORGANIZED AS 256K X 16 | 8542.32.00.71 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 63 | R-PBGA-B63 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 2MX16 | 1.4 mm | 16 | 33554432 bit | 存储器电路 | 10 mm | 8 mm | |||||||||||
![]() | XC17S150XLPDG8C | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 1040128 words | 1040128 | 70 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 3.3 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 1040128X1 | 4.5974 mm | 1 | 1040128 bit | 存储器电路 | 9.3599 mm | 7.62 mm | |||||||||
![]() | SST32VF802-70-4C-TBK | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SILICON STORAGE TECHNOLOGY INC | BGA, BGA48,6X8,40 | 70 ns | 70 °C | PLASTIC/EPOXY | BGA | BGA48,6X8,40 | RECTANGULAR | 网格排列 | 48 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | BOTTOM | BALL | 1 mm | unknown | R-PBGA-B48 | 不合格 | COMMERCIAL | 0.045 mA | 0.00003 A | 存储器电路 | FLASH+SRAM |