类别是'PMIC - 栅极驱动器'
PMIC - 栅极驱动器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 最大输出电流 | 工作电源电压 | 电源 | 电源电流 | 输出电流 | 最大电源电流 | 输入类型 | 接通延迟时间 | 上升时间 | 下降时间（典型值） | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||
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 | ISL6613IRZR5214 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 10.8V~13.2V | ISL6613 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| ISL6615CRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | 10 | Matte Tin (Sn) | 6.8V~13.2V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.5mm | 未说明 | ISL6615 | 10 | S-PDSO-N10 | Non-Inverting | 13ns 10ns | Synchronous | 2 | N-Channel MOSFET | 2.5A 4A | YES | 36V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||
 | ISL89400ABZ-TK | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3.7V 7.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 9V~14V | 未说明 | 未说明 | ISL89400 | 8 | Non-Inverting | 16ns 16ns | Independent | 2 | N-Channel MOSFET | 1.25A 1.25A | 100V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| ISL6613IRZ-TR5214 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 10.8V~13.2V | ISL6613 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
| ISL89401ABZ-TK | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.4V 2.2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 9V~14V | 未说明 | 未说明 | ISL89401 | 8 | Non-Inverting | 16ns 16ns | Independent | 2 | N-Channel MOSFET | 1.25A 1.25A | 100V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
 | MAX8791GTA+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-WQFN Exposed Pad | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | TIN | 1.9W | 4.2V~5.5V | QUAD | 260 | 1 | 5V | 0.65mm | MAX8791 | 8 | 7A | 5V | 5V | 500μA | 2.7A | Non-Inverting | 14ns | 12 ns | 10ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2.2A 2.7A | YES | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||
| ISL2100AABZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3.7V 7.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 9V~14V | ISL2100A | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | ISL89167FBEAZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89167 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
 | ISL89166FRTAZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89166 | Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
 | MAQ4124YME-TRVAO | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | Low-Side | -40°C~125°C TJ | Cut Tape (CT) | Automotive, AEC-Q100 | Discontinued | 2 (1 Year) | 4.5V~20V | MAQ4124 | Non-Inverting | 11ns 11ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 3A 3A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | U6083B-MY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 8-DIP (0.300, 7.62mm) | 8-DIP | High-Side | -40°C~150°C TJ | Tube | 1997 | Obsolete | 1 (Unlimited) | 25V Max | U6083B | Non-Inverting | Single | 1 | N-Channel MOSFET | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | HIP6602BCBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | HIP6602B | Non-Inverting | 20ns 20ns | Synchronous | 4 | N-Channel MOSFET | 15V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| HIP6601BCBZA-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | 8 | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||
| ISL6609CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6609 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| ISL6609CBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 1 | 5V | ISL6609 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||
| ISL6612AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| ISL6612AECBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
| ISL6612IRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
| ISL6612IRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
| ISL6612BCRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6612B | 10 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
| ISL6612BCBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6612B | 8 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
| ISL6612EIBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
 | MAX620EWN+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.4V | 表面贴装 | 18-SOIC (0.295, 7.50mm Width) | 18 | High-Side | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e3 | yes | 活跃 | 1 (Unlimited) | 18 | EAR99 | Matte Tin (Sn) | 762mW | 4.5V~16.5V | DUAL | 鸥翼 | 260 | 4 | 5V | 1.27mm | MAX620 | 18 | 25mA | 5V | 500μA | 500μA | Non-Inverting | 1.7μs | 2.5 μs | 1.7μs 2.5μs | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | 0.025A | N-Channel MOSFET | YES | 2.65mm | 11.55mm | 7.5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||
 | ISL6614AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 10.8V~13.2V | ISL6614A | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
 | MAX15024DATB+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 18 ns | 表面贴装 | 10-WFDFN Exposed Pad | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | Obsolete | 1 (Unlimited) | 10 | EAR99 | Matte Tin (Sn) | 1.4815W | 6.5V~28V | DUAL | 无铅 | 260 | 1 | 10V | 0.5mm | unknown | 未说明 | MAX15024 | 10 | 不合格 | 1.5mA | Inverting, Non-Inverting | 18 ns | 24ns | 16 ns | 24ns 16ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 32 μs | 8A | N-Channel MOSFET | 4A 8A | NO | 32 μs | 0.8mm | 3mm | 3mm | ROHS3 Compliant |