类别是'PMIC - 栅极驱动器'
PMIC - 栅极驱动器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 温度等级 | 通道数量 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 元素配置 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 静态电流 | 输入类型 | 接通延迟时间 | 最大输出电压 | 最小输入电压 | 输出电流-最大值 | 最大输入电压 | 输出特性 | 无卤素 | 座位高度-最大 | 上升时间 | 下降时间(典型值) | 最小输出电压 | 输出极性 | 发布时间 | 上升/下降时间(Typ) | 接口IC类型 | 驱动程序位数 | 信道型 | 驱动器数量 | 输入偏置电流 | 接通时间 | 输出峰值电流限制-名 | 电源电压1-额定值 | 闸门类型 | 峰值输出电流(源极,漏极) | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 输出电流流向 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | LM27222MX/NOPB | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 720mW | 4V~6.85V | DUAL | 鸥翼 | 260 | 1 | 5V | LM27222 | 8 | 2 | 4.5A | 5V | 825μA | 720mW | 4.5A | 825μA | 8 ns | 540μA | Non-Inverting | 8 ns | TOTEM-POLE | 17ns | 14 ns | 17ns 12ns | Synchronous | 4.5A | N-Channel MOSFET | 3A 4.5A | YES | 33V | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LM5109BQNGTRQ1 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Half-Bridge | Automotive grade | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-WFDFN Exposed Pad | YES | 8 | 0.8V 2.2V | -40°C~125°C TJ | Tape & Reel (TR) | Automotive, AEC-Q100 | yes | 活跃 | 1 (Unlimited) | 8 | 8V~14V | DUAL | 无铅 | 1 | 12V | LM5109 | Non-Inverting | 1A | TRUE | 15ns 15ns | Independent | 2 | 0.056 µs | 1A | N-Channel MOSFET | 1A 1A | YES | 0.056 µs | 108V | 800μm | 4mm | 4mm | 800μm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC4426AVPA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 730mW | 4.5V~18V | DUAL | 2 | TC4426A | 8 | 1.5A | 4.5mA | 730mW | 2mA | 35 ns | Inverting | 35 ns | 19ns | 19 ns | 25ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.05 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.05 μs | 9.46mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC426EOA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~85°C TA | Tube | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 40 | TC426 | 8 | 1.5A | 16V | 8mA | 470mW | 1.5A | 8mA | 75 ns | Inverting | 75 ns | 30ns | 30 ns | 30ns 30ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.075 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS4427PBF | Infineon Technologies | 数据表 | 5390 In Stock |
| 最小起订量: 1 倍率: 1 | 12 Weeks | Low-Side | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 0.8V 2.5V | -40°C~150°C TJ | Tube | 2006 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 6V~20V | DUAL | 未说明 | 1 | 15V | 未说明 | IRS4427PBF | 2 | 不合格 | 20V | 2.3A | 15V | 100μA | 1W | 2.3A | 95 ns | Non-Inverting | 25ns | 25 ns | 25ns 25ns | 基于半桥的外设驱动器 | Independent | 0.095 μs | IGBT, N-Channel MOSFET | 2.3A 3.3A | 0.095 μs | 5.33mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NCP81146MNTBG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1V 2V | 30 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | 4.5V~13.2V | DUAL | 无铅 | 0.5mm | R-PDSO-N8 | 不合格 | 10mA | Non-Inverting | 30 ns | 16ns 11ns | Synchronous | 2 | N-Channel MOSFET | 35V | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2103PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 220 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 通孔 | 125°C | -40°C | 1W | 10V~20V | IR2103PBF | 2 | 620V | 360mA | 2 | 20V | 10V | 1W | 210mA | 60 ns | Inverting, Non-Inverting | 820 ns | 20V | 170ns | 60 ns | 10V | 100ns 50ns | Independent | 2 | IGBT, N-Channel MOSFET | 210mA 360mA | 600V | 4.9276mm | 10.8966mm | 7.11mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MIC4427YM-TR | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | 活跃 | 1 (Unlimited) | 4.5V~18V | MIC4427 | Non-Inverting | 20ns 29ns | Independent | 2 | N-Channel, P-Channel MOSFET | 1.5A 1.5A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NCV7520MWTXG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 0.8V 2V | Automotive grade | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 32-VFQFN Exposed Pad | YES | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q100, FLEXMOS™ | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Tin (Sn) | 4.75V~5.25V | QUAD | 无铅 | 260 | 1 | 5V | 0.5mm | 30 | S-XQCC-N32 | Non-Inverting | 277ns Max 277ns Max | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 6 | 2 µs | 5V | N-Channel MOSFET | NO | 2 µs | 0.9mm | 5mm | 5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LM5101CSD/NOPB | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 2.3V - | 4 ns | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 10-WDFN Exposed Pad | 10 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 9V~14V | DUAL | 260 | 1 | 12V | 0.8mm | LM5101 | 2 | 1A | 2mA | 1A | 26 ns | 200μA | Non-Inverting | 4 ns | 990ns | 715 ns | TRUE | 990ns 715ns | Independent | 0.056 µs | 1A | N-Channel MOSFET | 1A 1A | YES | 0.056 µs | 118V | 800μm | 4mm | 4mm | 750μm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MC34151DR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 0.8V 2.6V | 100 ns | Commercial grade | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | 0°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 560mW | 6.5V~18V | DUAL | 鸥翼 | 260 | 2 | 12V | 40 | MC34151 | 8 | 1.5A | 12V | 10.5mA | 560mW | 100 ns | Inverting | 100 ps | 无卤素 | 31ns | 32 ns | 31ns 32ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.1 μs | 1.5A | N-Channel MOSFET | 1.5A 1.5A | NO | 0.1 μs | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LM5109BMA | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 2 ns | NRND (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tube | e0 | 不用于新设计 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | Tin/Lead (Sn/Pb) | 8V~14V | DUAL | 鸥翼 | 235 | 1 | 12V | LM5109 | 8 | 2 | 108.3V | 1A | 1.8mA | 1A | 32 ns | 200μA | Non-Inverting | 2 ns | 750mV | 15ns | 15 ns | TRUE | 15ns 15ns | Independent | 0.056 µs | 1A | N-Channel MOSFET | 1A 1A | YES | 0.056 µs | 108V | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | 无SVHC | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MD1210K6-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 Weeks | 0.3V 1.2V | 表面贴装 | 表面贴装 | 12-VQFN Exposed Pad | 12 | 21.99923mg | Half-Bridge | -20°C~125°C TJ | Tape & Reel (TR) | 2006 | e3 | 活跃 | 1 (Unlimited) | 12 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~13V | QUAD | 260 | 1 | 12V | 0.8mm | 40 | MD1210 | 2A | 12V | 550μA | 550μA | 2A | 7 ns | Non-Inverting | 6ns | 6 ns | 6ns 6ns | 和基于栅极的mosfet驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | YES | 1mm | 4mm | 4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TD351IDT | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 4.2V | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 124.596154mg | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 500mW | 12V~26V | DUAL | 鸥翼 | 260 | 1 | 16V | 30 | TD351 | 8 | 1.7A | 2.5mA | 500mW | 2.5mA | 2.2 μs | Non-Inverting | 2.2 μs | 100ns | 100 ns | 100ns 100ns Max | 基于半桥的外设驱动器 | Single | 1 | IGBT, N-Channel MOSFET | 1.3A 1.7A | 0.4 μs | OVER CURRENT; UNDER VOLTAGE | 水槽 | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MIC4423BWM | Micrel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | PLASTIC/EPOXY | -40 °C | 30 | 4.5 V | 85 °C | MIC4423BWM | 0.1 µs | SOP | RECTANGULAR | Rochester Electronics LLC | 活跃 | 0.1 µs | ROCHESTER ELECTRONICS INC | 18 V | 5.61 | SOIC | YES | 16 | SOP, | e0 | 无 | 锡铅 | BCDMOS | DUAL | 鸥翼 | 240 | 2 | 1.27 mm | unknown | 16 | R-PDSO-G16 | COMMERCIAL | INDUSTRIAL | 2.616 mm | 基于缓冲器或逆变器的MOSFET驱动器 | 3 A | NO | 10.338 mm | 7.5945 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UCC27201DR | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.5V | 1 ns | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 72.603129mg | Half-Bridge | -40°C~140°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.3W | 8V~17V | DUAL | 鸥翼 | 260 | 1 | 12V | 1MHz | UCC27201 | 8 | 2 | 3A | 12V | 5.5mA | 1.3W | 3A | 5.5mA | 20 ns | Non-Inverting | 1 ns | 8ns | 7 ns | TRUE | 8ns 7ns | 2 | Independent | 3A | N-Channel MOSFET | 3A 3A | UNDER VOLTAGE | 120V | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2132PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.2V | 425 ns | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 28 | EAR99 | 75Ohm | 8542.39.00.01 | 1.5W | 10V~20V | DUAL | 1 | 15V | 2.54mm | IR2132PBF | 6 | 300mV | 500mA | 15V | 30μA | 1.5W | 200mA | 850 ns | Inverting | 675 ns | 125ns | 55 ns | 80ns 35ns | 3-Phase | 0.85 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.55 μs | 600V | 5.969mm | 39.7256mm | 14.732mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS21064SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 30 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | High-Side or Low-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | SMD/SMT | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21064SPBF | 2 | 20V | 600mA | 15V | 180μA | 1W | 290mA | 180μA | 300 ns | Non-Inverting | 30 ns | 20V | 220ns | 80 ns | 200 ns | 100ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | 0.3 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TPS28225DR | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 72.603129mg | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.25W | 4.5V~8.8V | DUAL | 鸥翼 | 260 | 1 | 7.2V | TPS28225 | 8 | 2 | 4A | 7.2V | Single | 500μA | 1.25W | 6A | 14 ns | Non-Inverting | 14 ns | 10ns | 10 ns | 10ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Synchronous | 6A | N-Channel MOSFET | YES | 33V | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LT1910IS8#TRPBF | Linear Technology/Analog Devices | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.7V 3.5V | 100 μs | PRODUCTION (Last Updated: 2 weeks ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | High-Side | -40°C~125°C TJ | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 8V~48V | DUAL | 鸥翼 | 250 | 1 | 24V | 未说明 | LT1910 | 8 | 不合格 | Non-Inverting | 400 μs | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | N-Channel MOSFET | YES | 4.9025mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC4427EPA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | Industrial grade | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 12Ohm | Matte Tin (Sn) | 730mW | 4.5V~18V | DUAL | 2 | TC4427 | 8 | 25mV | 1.5A | 4.5mA | 730mW | 1.5A | 4.5mA | 50 ns | Non-Inverting | 50 ns | 20ns | 30 ns | 19ns 19ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 10μA | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.06 μs | 4.95mm | 10.16mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC4429CAT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 0.8V 2.4V | Commercial grade | 通孔 | 通孔 | TO-220-5 | 5 | Low-Side | 0°C~150°C TJ | Tube | 2001 | e3 | yes | 活跃 | 不适用 | 5 | EAR99 | Matte Tin (Sn) | 1.6W | 4.5V~18V | 1 | TC4429 | 3 | 6A | 3mA | 1.6W | 1.5mA | 75 ns | Inverting | 100 ps | 35ns | 35 ns | 25ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 6A | N-Channel, P-Channel MOSFET | 6A 6A | YES | 4.83mm | 14.99mm | 10.54mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC4428EOA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 12Ohm | Matte Tin (Sn) | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 40 | TC4428 | 8 | 25mV | 1.5A | 4.5mA | 470mW | 1.5A | 4.5mA | 50 ns | Inverting, Non-Inverting | 50 ns | 30ns | 30 ns | 19ns 19ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 10μA | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.06 μs | 1.4986mm | 4.8768mm | 3.9116mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NCP5111DR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 0.8V 2.3V | 170 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 40 | NCP5111 | 8 | 20V | 500mA | 15V | 5mA | 5mA | Non-Inverting | 1.17 μs | 无卤素 | 160ns | 75 ns | 85ns 35ns | Synchronous | 2 | IGBT, N-Channel MOSFET | 250mA 500mA | 0.17 μs | UNDER VOLTAGE | 600V | 水槽 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ADP3634ARDZ | Analog Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2V | PRODUCTION (Last Updated: 2 weeks ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | Low-Side | -40°C~150°C TJ | Tube | e3 | no | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 9.5V~18V | DUAL | 鸥翼 | 260 | 2 | 12V | 30 | ADP3634 | 8 | 4A | 1.2mA | 1.2mA | 4A | 3mA | 35 ns | Non-Inverting | 35 ns | 9.5V | 18V | 25ns | 25 ns | 10ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 4A | N-Channel MOSFET | 4A 4A | NO | 1.65mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 |