类别是'PMIC - 栅极驱动器'
PMIC - 栅极驱动器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 温度等级 | 电压 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 静态电流 | 电源电流-最大值 | 输入类型 | 接通延迟时间 | 输出特性 | 无卤素 | 座位高度-最大 | 上升时间 | 下降时间（典型值） | 输出极性 | 发布时间 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 输入偏置电流 | 接通时间 | 输出峰值电流限制-名 | 电源电压1-额定值 | 闸门类型 | 峰值输出电流（源极，漏极） | 最大结点温度（Tj） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 环境温度范围高 | 输出电流流向 | 特征 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||||
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 | NCP5109ADR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 0.8V 2.3V | 170 ns | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | 8 | 不合格 | 500mA | 15V | 500mA | Non-Inverting | 170 ns | 无卤素 | 85ns | 35 ns | 85ns 35ns | Independent | 2 | 0.17 μs | IGBT, N-Channel MOSFET | 250mA 500mA | 0.17 μs | UNDER VOLTAGE | 200V | 1.5mm | 5mm | 4mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | NCP81161MNTBG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1V 2V | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Half-Bridge | 0°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 4.5V~13.2V | DUAL | 1 | 5V | 0.5mm | NCP81161 | 8 | Non-Inverting | 无卤素 | 16ns 11ns | Synchronous | 2 | N-Channel MOSFET | YES | 35V | 1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC4428COA713 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 0.8V 2.4V | Commercial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | 0°C~70°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 40 | TC4428 | 8 | 1.5A | 4.5mA | 470mW | 4.5mA | 50 ns | Inverting, Non-Inverting | 50 ns | 30ns | 30 ns | 25ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.06 μs | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | NCP81151BMNTBG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.6V 3.3V | Industrial grade | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | yes | 活跃 | 1 (Unlimited) | 4.5V~5.5V | Non-Inverting | 16ns | 11 ns | 16ns 11ns | Synchronous | 2 | N-Channel MOSFET | 150°C | 40V | 100°C | 1mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MC33151DR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Low-Side | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 0.8V 2.6V | -40°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 560mW | 6.5V~18V | DUAL | 鸥翼 | 260 | 2 | 12V | 40 | MC33151 | 8 | 1.5A | 12V | 10.5mA | 560mW | 100 ns | Inverting | 100 ns | 无卤素 | 31ns | 32 ns | 31ns 32ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.1 µs | 1.5A | N-Channel MOSFET | 1.5A 1.5A | NO | 0.1 µs | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ADP3110AKRZ-RL | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Half-Bridge | Commercial grade | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 0.8V 2V | 0°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 4.6V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | ADP3110A | 8 | 不合格 | 5mA | 5mA | 65 ns | Inverting, Non-Inverting | 65 ns | 无卤素 | 55ns | 45 ns | 20ns 11ns | Synchronous | 2 | 0.04 µs | N-Channel MOSFET | YES | 0.07 µs | 35V | 1.5mm | 5mm | 4mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | MIC4425CWM | Micrel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | PLASTIC/EPOXY | 30 | 4.5 V | 70 °C | MIC4425CWM | 0.1 µs | SOP | RECTANGULAR | Rochester Electronics LLC | 活跃 | 0.1 µs | ROCHESTER ELECTRONICS INC | 18 V | 5.61 | SOIC | YES | 16 | SOP, | e0 | 无 | 锡铅 | BCDMOS | DUAL | 鸥翼 | 240 | 2 | 1.27 mm | unknown | 16 | R-PDSO-G16 | COMMERCIAL | COMMERCIAL | 2.616 mm | 基于缓冲器或逆变器的MOSFET驱动器 | 3 A | NO | 10.338 mm | 7.5945 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IR2086STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 143.703733mg | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2006 | e3 | 活跃 | 2 (1 Year) | 16 | EAR99 | Tin (Sn) | 1W | 9.5V~15V | DUAL | 鸥翼 | 1 | 12V | 1.27mm | 500kHz | IR2086SPBF | 1.2A | 1mA | 1W | 1.2A | 1mA | RC输入电路 | 60ns | 30 ns | 40ns 20ns | 全桥mosfet驱动器 | Synchronous | 4 | 0.06 μs | 1.2A | N-Channel MOSFET | 1.2A 1.2A | YES | 0.03 μs | 100V | 1.4986mm | 9.9568mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AUIRS2118STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 6V 9.5V | High-Side | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 140 ns | -40°C~150°C TJ | Tape & Reel (TR) | 2000 | Automotive, AEC-Q100 | 活跃 | 3 (168 Hours) | 125°C | -40°C | 625mW | 10V~20V | AUIRS2118S | 1 | 600mA | 20V | 10V | 625mW | 290mA | 225 ns | Inverting | 140 ns | 130ns | 65 ns | 75ns 25ns | Single | 1 | IGBT, N-Channel MOSFET | 290mA 600mA | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MCP1403-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.4V | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~18V | DUAL | 1 | MCP1403 | 8 | 2 | 18V | 4.5A | 2mA | 4.5A | 2mA | 48 ns | Inverting | 48 ns | 28ns | 28 ns | 15ns 18ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 10μA | 0.065 μs | 4.5A | IGBT, N-Channel, P-Channel MOSFET | 4.5A 4.5A | NO | 0.065 μs | 4.953mm | 10.16mm | 7.112mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MIC4120YME | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 0.8V 2.4V | 45 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | Low-Side | -40°C~125°C TJ | Tube | 2004 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~20V | DUAL | 鸥翼 | 260 | 1 | 18V | 40 | MIC4120 | 1 | 25mV | 6A | 450μA | 6A | 75 ns | Non-Inverting | 45 ns | 30ns | 30 ns | 12ns 13ns | 基于缓冲器或反相器的外设驱动器 | Single | 0.035 μs | 6A | 18V | N-Channel, P-Channel MOSFET | 6A 6A | 0.035 μs | TRANSIENT | 1.5mm | 4.93mm | 3.94mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIC4424BN | Micrel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | IN-LINE | PLASTIC/EPOXY | DIP8,.3 | -40 °C | 30 | 4.5 V | 85 °C | 无 | MIC4424BN | 0.1 µs | DIP | RECTANGULAR | Micrel Inc | Obsolete | 0.1 µs | MICREL INC | 18 V | 7.77 | DIP | NO | 8 | PLASTIC, DIP-8 | e0 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.39.00.01 | MOSFET驱动器 | BCDMOS | DUAL | THROUGH-HOLE | 240 | 2 | 2.54 mm | not_compliant | 8 | R-PDIP-T8 | 不合格 | 4.5/18 V | INDUSTRIAL | TOTEM-POLE | TRUE | STANDARD | 基于缓冲器或逆变器的MOSFET驱动器 | 3 A | NO | 9.525 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRS2334SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 530 ns | 表面贴装 | 表面贴装 | 20-SOIC (0.295, 7.50mm Width) | 20 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 3 (168 Hours) | 20 | EAR99 | 1.14W | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IRS2334SPBF | 1 | 不合格 | 20V | 350mA | 300μA | 1.14W | 200mA | 750 ns | Non-Inverting | 530 ns | 125ns | 50 ns | 125ns 50ns | 3-Phase | 6 | 0.75 μs | IGBT, N-Channel MOSFET | 200mA 350mA | 0.75 μs | TRANSIENT; OVER CURRENT; UNDER VOLTAGE | 600V | 2.64mm | 12.98mm | 7.6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LM5111-2M/NOPB | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.2V | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~125°C TJ | Tube | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | Matte Tin (Sn) | 3.5V~14V | DUAL | 鸥翼 | 260 | 1 | 12V | LM5111 | 8 | 2 | 5A | 2mA | 5A | 2mA | 40 ns | 1mA | Inverting | 40 ns | 25ns | 25 ns | 12 ns | 14ns 12ns | 基于缓冲器或反相器的外设驱动器 | Independent | 5A | N-Channel MOSFET | 3A 5A | OVER VOLTAGE | UVLO | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LT1336CS#PBF | Linear Technology/Analog Devices | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2V | 600 ns | PRODUCTION (Last Updated: 4 months ago) | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | 16 | Half-Bridge | 0°C~125°C TJ | Tube | 2010 | e3 | 活跃 | 1 (Unlimited) | 16 | EAR99 | Matte Tin (Sn) | 10V~15V | DUAL | 鸥翼 | 260 | 1 | 12V | 30 | LT1336 | 16 | 75V | 1.5A | 12V | 1.5A | 40mA | Non-Inverting | 500 ns | TOTEM-POLE | 200ns | 140 ns | TRUE | 触发器 | 130ns 60ns | Independent | 2 | 0.5 µs | 1.5A | N-Channel MOSFET | 1.5A 1.5A | YES | 0.6 µs | 60V | 1.498mm | 10.01mm | 3.988mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC4627COE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | High-Side or Low-Side | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 16 | EAR99 | Matte Tin (Sn) | 760mW | 4V~6V | DUAL | 鸥翼 | 260 | 1 | 5V | 1MHz | 40 | TC4627 | 16 | 1 | 1.5A | 5V | 2.5mA | 760mW | 2.5mA | 55 ns | Non-Inverting | 55 ns | 40ns | 35 ns | 33ns 27ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.06 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.07 μs | 2.64mm | 7.495mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRS210614SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | 230 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | Obsolete | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 260 | 14V | 30 | IRS210614SPBF | 不合格 | 20V | 600mA | 120μA | 1W | 230 ns | Non-Inverting | 230 ns | 100ns | 35 ns | 100ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 290mA 600mA | 600V | 水槽 | 1.5mm | 8.74mm | 3.99mm | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRS2108SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | Half-Bridge | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 30 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2108SPBF | 2 | 20V | 600mA | 15V | 1mA | 625mW | 290mA | 1.6mA | 300 ns | Inverting, Non-Inverting | 30 ns | 220ns | 35 ns | 200 ns | 100ns 35ns | Independent | 0.3 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIC4467CWM | Micrel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | PLASTIC/EPOXY | 30 | 4.5 V | 70 °C | MIC4467CWM | 0.1 µs | SOP | RECTANGULAR | Rochester Electronics LLC | 活跃 | 0.1 µs | ROCHESTER ELECTRONICS LLC | 18 V | 5.62 | SOIC | YES | 16 | SOP-16 | e0 | 无 | 锡铅 | CMOS | DUAL | 鸥翼 | 240 | 4 | 1.27 mm | unknown | 16 | R-PDSO-G16 | COMMERCIAL | COMMERCIAL | 2.616 mm | 基于NAND门的MOSFET驱动器 | 1.2 A | NO | 10.35 mm | 7.49 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRS21091SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 200 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21091SPBF | 2 | 620V | 600mA | 15V | 75μA | 625mW | 290mA | 1.6mA | 950 ns | Non-Inverting | 70 ns | 220ns | 80 ns | 100ns 35ns | Synchronous | 0.95 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; THERMAL | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | L6385ED | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1.5V 3.6V | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 750mW | 17V Max | DUAL | 鸥翼 | 260 | 1 | 15V | 400kHz | 30 | L6385 | 8 | 2 | 580V | 650mA | 15V | 750mW | 110 ns | Inverting | 110 ns | 50ns | 30 ns | 50ns 30ns | Independent | 0.65A | IGBT, N-Channel MOSFET | 400mA 650mA | YES | 600V | 1.25mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LM5105SDX/NOPB | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.2V | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 10-WDFN Exposed Pad | 10 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8V~14V | DUAL | 260 | 1 | 12V | 0.8mm | LM5105 | 10 | 1.8A | 14V | 1.65mA | 1.8A | 595 ns | 400μA | Non-Inverting | 595 ns | 15ns | 15 ns | 真倒 | 15ns 15ns | Synchronous | 2 | 0.705 µs | 1.8A | N-Channel MOSFET | 1.8A 1.8A | YES | 0.056 µs | 118V | 800μm | 4mm | 4mm | 750μm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ADP3110AKCPZ-RL | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2V | Commercial grade | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Half-Bridge | 0°C~150°C TJ | Tape & Reel (TR) | 2007 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Gold/Palladium (Ni/Au/Pd) | 4.6V~13.2V | DUAL | 无铅 | 260 | 1 | 12V | 0.5mm | 40 | ADP3110A | 8 | 不合格 | 35V | 1A | 5mA | 700μA | 5mA | 65 ns | Inverting, Non-Inverting | 65 ns | 无卤素 | 55ns | 45 ns | 20ns 11ns | Synchronous | 2 | 0.04 µs | N-Channel MOSFET | YES | 0.07 µs | 950μm | 3mm | 3mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LM5110-1SD/NOPB | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.2V | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 10-WDFN Exposed Pad | 10 | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3.5V~14V | DUAL | 260 | 1 | 12V | 0.8mm | LM5110 | 10 | 2 | 5A | 2mA | 5A | 2mA | 40 ns | 1mA | Non-Inverting | 40 ns | 25ns | 25 ns | 14ns 12ns | 基于缓冲器或反相器的外设驱动器 | Independent | 0.04 µs | 5A | N-Channel MOSFET | 3A 5A | 0.04 µs | UNDER VOLTAGE | 800μm | 4mm | 4mm | 750μm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRS2112PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | Half-Bridge | 通孔 | 通孔 | 14-DIP (0.300, 7.62mm) | 14 | 130 ns | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 14 | EAR99 | 1.6W | 10V~20V | DUAL | 1 | 15V | IRS2112PBF | 620V | 600mA | 15V | 80μA | 1.6W | 290mA | 180μA | 180 ns | Non-Inverting | 135 ns | 130ns | 65 ns | 105 ns | 75ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | 0.18 μs | IGBT, N-Channel MOSFET | 290mA 600mA | 0.16 μs | TRANSIENT; UNDER VOLTAGE | 600V | 5.33mm | 20.19mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |