类别是'PMIC - 栅极驱动器'
PMIC - 栅极驱动器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 供应商器件包装 | 质量 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 通道数量 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 输入类型 | 输出功率 | 接通延迟时间 | 最大输出电压 | 拓扑 | 输出特性 | 无卤素 | 上升时间 | 下降时间（典型值） | 最小输出电压 | 输出极性 | 发布时间 | 上升/下降时间(Typ) | 接口IC类型 | 驱动程序位数 | 信道型 | 隔离 | 驱动器数量 | 输入偏置电流 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 最大结点温度（Tj） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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 | TC4423CPA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | Commercial grade | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | 0°C~150°C TJ | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 730mW | 4.5V~18V | DUAL | 2 | TC4423 | 8 | 2 | 18V | 3A | 2.5mA | 730mW | 3A | 2.5mA | 75 ns | Inverting | 75 ns | 35ns | 35 ns | 23ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 10μA | 0.1 μs | 3A | N-Channel, P-Channel MOSFET | 3A 3A | YES | 0.1 μs | 3.683mm | 9.779mm | 6.604mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | MCP1401T-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 5 | Low-Side | -40°C~125°C | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | 反相输出 | 390mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 1 | 40 | MCP1401 | 5 | 1 | 18V | 500mA | 200μA | 390mW | 500mA | 1.1mA | Inverting | TOTEM-POLE | 25ns | 20 ns | INVERTED | 19ns 15ns | PUSH-PULL BASED MOSFET DRIVER | Single | 0.5A | IGBT, N-Channel, P-Channel MOSFET | 500mA 500mA | NO | 1.3mm | 3.1mm | 1.8mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | IR11662STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2V 2.15V | 500kHz | 75 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Low-Side | -25°C~125°C TJ | Tape & Reel (TR) | 2014 | Advanced Smart Rectifier™ | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | 5Ohm | 11.4V~18V | DUAL | 鸥翼 | 1 | 15V | IR11662SPBF | 200V | 1A | 50mA | 1A | Non-Inverting | 970mW | 95 ns | 反激式 | 21ns | 10 ns | 21ns 10ns | 基于半桥的mosfet驱动器 | Single | Isolated | 1 | 0.095 μs | 4A | N-Channel MOSFET | 1A 4A | YES | 0.075 μs | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| TC4427CPA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | Commercial grade | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | 0°C~150°C TJ | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 12Ohm | Matte Tin (Sn) | 730mW | 4.5V~18V | DUAL | 2 | TC4427 | 8 | 2 | 18V | 1.5A | 4.5mA | 730mW | 1.5A | 4.5mA | 50 ns | Non-Inverting | 50 ns | 17.975V | 30ns | 30 ns | 19ns 19ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 10μA | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.06 μs | 4.06mm | 10.16mm | 6.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | MIC5014YM-TR | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2V | 30 μs | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 2.75V~30V | MIC5014 | 1 | 10mA | 30V | 2.75V | Non-Inverting | 8 ms | Single | 1 | N-Channel MOSFET | 1.48mm | 4.93mm | 3.94mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | UCC27200ADDAR | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3V 8V | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-PowerSOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~140°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7W | 8V~17V | DUAL | 鸥翼 | 260 | 1 | 12V | 未说明 | UCC27200 | 8 | 2 | 不合格 | 3A | 2.7W | 3A | 4mA | 50 ns | Non-Inverting | 7 ns | 8ns | 7 ns | TRUE | 8ns 7ns | 2 | Independent | 0.007 µs | 3A | N-Channel MOSFET | 3A 3A | 0.007 µs | UNDER VOLTAGE | 120V | 1.7mm | 4.89mm | 3.9mm | 1.48mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| IR2302PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.9V | 200 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 1W | 5V~20V | DUAL | 未说明 | 1 | 15V | 未说明 | IR2302PBF | 不合格 | 620V | 350mA | 15V | 1.6mA | 1W | 200mA | 1.6mA | 950 ns | Non-Inverting | 70 ns | 220ns | 80 ns | 130ns 50ns | Synchronous | 2 | 0.95 μs | 0.2A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 5.33mm | 10.92mm | 7.11mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | L6386ED013TR | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1.5V 3.6V | 150 ns | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | e4 | 活跃 | 3 (168 Hours) | 14 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 750mW | 17V Max | DUAL | 鸥翼 | 260 | 1 | 15V | 400kHz | 40 | L6386 | 14 | 2 | 580V | 650mA | 15V | 320μA | 750mW | 650mA | 150 ns | Inverting | 150 ps | 50ns | 30 ns | 50ns 30ns | Independent | 0.15 µs | 0.65A | IGBT, N-Channel MOSFET | 400mA 650mA | YES | 0.15 µs | 600V | 1.65mm | 8.75mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | NCP81382MNTXG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 50 μs | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 36-TFQFN Exposed Pad | 36 | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | yes | 活跃 | 3 (168 Hours) | 10W | 4.5V~5.5V | not_compliant | 7 | 70A | 2mA | Non-Inverting | 40 μs | Synchronous | 1 | N-Channel MOSFET | 35V | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCP14E3-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 665mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 1 | 12V | 40 | MCP14E3 | 8 | 2 | 17.975V | 4A | 750μA | 665mW | 4A | 2mA | 60 ns | Inverting | 60 ns | 30ns | 30 ns | 15ns 18ns | PUSH-PULL BASED MOSFET DRIVER | Independent | 10μA | 0.07 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.07 μs | 1.4986mm | 4.8768mm | 3.9116mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| UCC27211DDAR | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.3V 2.8V | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-PowerSOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~140°C TJ | Cut Tape (CT) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8V~17V | DUAL | 鸥翼 | 260 | 1 | 12V | UCC27211 | 8 | 2 | 4.5A | 12V | 4A | 4A | 4.3mA | 40 ns | Non-Inverting | 40 ns | 600ns | 400 ns | TRUE | 7.2ns 5.5ns | Independent | 0.6 μs | 4A | N-Channel MOSFET | 4A 4A | YES | 0.4 μs | 120V | 1.7mm | 4.89mm | 3.9mm | 1.48mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| TC4429EOA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 1 | 40 | TC4429 | 8 | 1 | 18V | 6A | 3mA | 470mW | 6A | 1.5mA | 75 ns | Inverting | 100 ps | 35ns | 35 ns | 25ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 6A | N-Channel, P-Channel MOSFET | 6A 6A | YES | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| MIC4425YM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | -40°C~150°C TJ | Tube | 2005 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 4.5V~18V | MIC4425 | 2 | 3A | 2 | 18V | 4.5V | 3.5mA | 3A | 75 ns | Inverting, Non-Inverting | 75 ns | 35ns | 35 ns | 28ns 32ns | Independent | 2 | N-Channel, P-Channel MOSFET | 3A 3A | 1.48mm | 4.93mm | 3.94mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRS21094SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 200 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21094SPBF | 2 | 620V | 600mA | 15V | 1.6mA | 1W | 290mA | 1.6mA | 950 ns | Non-Inverting | 750 ns | 220ns | 80 ns | 200 ns | 100ns 35ns | Synchronous | 0.95 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.5mm | 8.74mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | NCP5304DR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.3V | 100 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 1 | 15V | NCP5304 | 8 | 600mV | 500mA | 15V | 200μA | 500mA | 5mA | 20 ns | Non-Inverting | 100 ns | 无卤素 | 85ns | 35 ns | 85ns 35ns | Synchronous | 2 | 0.17 µs | IGBT, N-Channel MOSFET | 250mA 500mA | 150°C | 0.17 µs | UNDER VOLTAGE | 600V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | UCC27211DRMR | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.3V 2.7V | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Half-Bridge | -40°C~140°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8V~17V | DUAL | 260 | 1 | 12V | UCC27211 | 8 | 2 | 4.5A | 12V | 4A | 4A | 4.3mA | 40 ns | Non-Inverting | 40 ns | 600ns | 400 ns | TRUE | 7.2ns 5.5ns | Independent | 0.6 μs | 4A | N-Channel MOSFET | 4A 4A | YES | 0.4 μs | 120V | 1mm | 4mm | 4mm | 900μm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | UCC27322QDGNRQ1 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.1V 2.7V | Automotive grade | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 8 | Low-Side | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | e4 | yes | 活跃 | 2 (1 Year) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3W | 4V~15V | DUAL | 鸥翼 | 260 | 1 | 14V | 0.65mm | UCC27322 | 8 | 1 | 9A | 3W | 9A | 1mA | 95 ns | Non-Inverting | 95 ns | TOTEM-POLE | 75ns | 35 ns | TRUE | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.075 µs | 9A | N-Channel, P-Channel MOSFET | 9A 9A | NO | 0.075 µs | 1.1mm | 3mm | 3mm | 1.02mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
| IR1166STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 21 Weeks | 2V 2.15V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Low-Side | -25°C~125°C TJ | Cut Tape (CT) | 2008 | SmartRectifier™ | e3 | Obsolete | 2 (1 Year) | 8 | SMD/SMT | EAR99 | 5Ohm | Matte Tin (Sn) | 970mW | 11.4V~18V | DUAL | 鸥翼 | 260 | 1 | 15V | 500kHz | 30 | IR1166SPBF | 不合格 | 200V | 4A | 65mA | 970mW | 1A | 65mA | 80 ns | Non-Inverting | 80 ns | 反激式 | 181ns | 44 ns | 21ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 4A | N-Channel MOSFET | 1A 4A | NO | 0.065 μs | 1.4986mm | 4.9784mm | 3.9878mm | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
| UCC27524DGN | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1V 2.3V | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 8 | 24.408939mg | Low-Side | -40°C~140°C TJ | Tube | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 12V | 0.65mm | UCC27524 | 8 | 2 | 5A | 12V | 5A | 5A | 23 ns | Non-Inverting | 23 ns | 18ns | 10 ns | TRUE | 7ns 6ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 5A | IGBT, N-Channel MOSFET | 5A 5A | NO | 1.1mm | 3mm | 3mm | 1.02mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| MIC4426ZM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | 0°C~150°C TJ | Tube | 2005 | 活跃 | 1 (Unlimited) | 70°C | 0°C | 1.04W | 4.5V~18V | MIC4426 | 2 | 1.5A | 18V | 4.5V | 4.5mA | 1.5A | 50 ns | Inverting | 50 ns | 30ns | 20 ns | 20ns 29ns | Independent | 2 | N-Channel, P-Channel MOSFET | 1.5A 1.5A | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IR2112PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 30 ns | 通孔 | 通孔 | 14-DIP (0.300, 7.62mm) | 14 | 14-Lead PDIP | High-Side or Low-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 1 (Unlimited) | 14 | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 1.6W | 10V~20V | DUAL | 250 | 1 | 15V | 30 | IR2112PBF | 2 | 20V | 500mA | 15V | 180μA | 1.6W | 250mA | 180μA | 180 ns | Non-Inverting | 30 ns | 20V | 130ns | 65 ns | 10V | 80ns 40ns | Independent | 0.18 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.16 μs | 600V | 4.9276mm | 20.1676mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||
| TC4422AVPA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 0.8V 2.4V | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~18V | DUAL | 1 | 12V | 2.54mm | TC4422A | 8 | 1 | 18V | 10A | 150μA | 9A | 250μA | 49 ns | Non-Inverting | 49 ns | 34ns | 32 ns | 38ns 33ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.06 μs | 10A | IGBT, N-Channel, P-Channel MOSFET | 10A 10A | NO | 0.06 μs | 3.68mm | 9.78mm | 6.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
| MIC4427ZM-TR | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | 60 ns | Commercial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | 0°C~150°C TJ | Tape & Reel (TR) | 2005 | 活跃 | 1 (Unlimited) | 70°C | 0°C | 4.5V~18V | MIC4427 | 2 | 1.5A | 18V | 4.5V | 1.5mA | 1.5A | 50 ns | Non-Inverting | 40 ns | 20ns | 29 ns | 20ns 29ns | Independent | 2 | N-Channel, P-Channel MOSFET | 1.5A 1.5A | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IR2127PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 200 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | High-Side or Low-Side | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Integrated Circuit (IC) | 125Ohm | 1W | 12V~20V | DUAL | 1 | 15V | 2.54mm | IR2127PBF | 1 | 20V | 500mA | 120μA | 1W | 250mA | 250 ns | Non-Inverting | 250 ns | 20V | 130ns | 65 ns | 10V | 80ns 40ns | Single | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | 600V | 4.9276mm | 10.8966mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | TC4424COE713 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.4V | Commercial grade | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Low-Side | 0°C~150°C TJ | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 16 | EAR99 | Matte Tin (Sn) | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 40 | TC4424 | 16 | 3A | 4.5/18V | 2.5mA | 470mW | 2.5mA | 75 ns | Non-Inverting | 75 ns | 35ns | 35 ns | 23ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.1 μs | 3A | N-Channel, P-Channel MOSFET | 3A 3A | YES | 0.1 μs | 10.3mm | 7.49mm | 无 | ROHS3 Compliant | 无铅 |