类别是'PMIC - 栅极驱动器'
PMIC - 栅极驱动器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 通道数量 | 电压 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 静态电流 | 输入类型 | 接通延迟时间 | 最大输出电压 | 上升时间 | 下降时间（典型值） | 集电极发射器电压(VCEO) | 最小输出电压 | 最大集电极电流 | 输出极性 | 发布时间 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 输入偏置电流 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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 | IRS2001SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 0.8V 2.5V | 150 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 不用于新设计 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IRS2001SPBF | 2 | 220V | 600mA | 15V | 270μA | 625mW | 130mA | 270μA | 220 ns | Non-Inverting | 160 ns | 170ns | 60 ns | 150 ns | 70ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 200V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | TC4424AVOA713 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 610mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 5V | 40 | TC4424A | 8 | 4.5A | 1mA | 610mW | 2mA | 48 ns | Non-Inverting | 48 ns | 21ns | 21 ns | 12ns 12ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 3A | N-Channel, P-Channel MOSFET | 4.5A 4.5A | YES | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| IRS2183STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 220 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2183SPBF | 10V | 2.3A | 15V | 1.6mA | 625mW | 1.9A | 1.6mA | 330 ns | Inverting, Non-Inverting | 180 ns | 60ns | 35 ns | 40ns 20ns | Independent | 2 | 1.9A | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| IR4426SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 65 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2005 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 625mW | 6V~20V | DUAL | 鸥翼 | 260 | 2 | 15V | 30 | IR4426SPBF | 2 | 20V | 3.3A | 15V | 200μA | 625mW | 2.3A | 200μA | 160 ns | Inverting | 160 ps | 35ns | 25 ns | 65 ns | 15ns 10ns | Independent | 0.16 μs | 3.3A | IGBT, N-Channel MOSFET | 2.3A 3.3A | NO | 0.15 μs | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | FAN7385MX | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 1.3V 2.5V | 0 s | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | 218.3mg | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2007 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag) | 1W | 10V~20V | DUAL | 鸥翼 | 2 | 15V | FAN7385 | 650mA | 15V | 70μA | 1W | 650mA | 70μA | 180 ns | Non-Inverting | 0 s | 90ns | 70 ns | 50ns 30ns | 基于全桥的外设驱动 | Independent | 2 | 0.18 µs | IGBT, N-Channel MOSFET | 350mA 650mA | 0.18 µs | OVER CURRENT; UNDER VOLTAGE | 600V | 1.55mm | 8.7mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
| MIC4428YM-TR | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | 40 ns | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 4.5V~18V | MIC4428 | 2 | 25mV | 1.5A | 18V | 4.5V | 1.5mA | 1.5A | 50 ns | Inverting, Non-Inverting | 40 ns | 30ns | 20 ns | 20ns 29ns | Independent | 2 | N-Channel, P-Channel MOSFET | 1.5A 1.5A | 1.48mm | 4.93mm | 3.94mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIC4452YM-TR | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | 80 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | -40°C~85°C TA | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 1.04W | 4.5V~18V | MIC4452 | 1 | 25mV | 12A | 1 | 20V | 18V | 4.5V | 450μA | 1.04W | 12A | 60 ns | Non-Inverting | 80 ns | 40ns | 50 ns | 20ns 24ns | Single | 1 | IGBT, N-Channel MOSFET | 12A 12A | 1.48mm | 4.93mm | 3.94mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | L6384ED013TR | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1.5V 3.6V | Half-Bridge | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 400kHz | -45°C~125°C TJ | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 125Ohm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 750mW | 14.6V~16.6V | DUAL | 鸥翼 | 260 | 1 | 14.4V | 400kHz | 3 | L6384 | 8 | 2 | 580V | 650mA | 15.6V | 14.4V | 25mA | 750mW | 25mA | 300 ns | Inverting | 300 ns | 50ns | 30 ns | 600V | 400mA | 50ns 30ns | Synchronous | 0.65A | IGBT, N-Channel MOSFET | 400mA 650mA | YES | 0.3 μs | 1.5mm | 5mm | 4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
| IR2103STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 220 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR2103SPBF | 2 | 620V | 360mA | 15V | 30μA | 625mW | 130mA | 60 ns | Inverting, Non-Inverting | 820 ns | 20V | 170ns | 60 ns | 10V | 100ns 50ns | Independent | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||||||||||||
| MCP14E5-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 665mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 1 | 12V | 40 | MCP14E5 | 8 | 2 | 17.975V | 4A | 750μA | 665mW | 4A | 2mA | 60 ns | Inverting, Non-Inverting | 60 ns | 30ns | 30 ns | 15ns 18ns | PUSH-PULL BASED MOSFET DRIVER | Independent | 0.07 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.07 μs | 1.25mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| TC4427EOA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.8V 2.4V | 50 ns | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 12Ohm | Matte Tin (Sn) - annealed | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 40 | TC4427 | 8 | 2 | 25mV | 1.5A | 15V | 4.5mA | 470mW | 1.5A | 4.5mA | 50 ns | Non-Inverting | 30 ns | 25mV | 30ns | 30 ns | 19ns 19ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 10μA | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.06 μs | 1.42mm | 4.9mm | 3.91mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| TC426COA | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.4V | Commercial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 470mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 40 | TC426 | 8 | 2 | 18V | 1.5A | 16V | 8mA | 470mW | 1.5A | 8mA | 75 ns | Inverting | 75 ns | 30ns | 30 ns | 30ns 30ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 0.075 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 1.42mm | 4.9mm | 3.91mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| IRS2308SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 200 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2308SPBF | 2 | 20V | 600mA | 15V | 1.6mA | 625mW | 290mA | 300 ns | Non-Inverting | 220 ns | 220ns | 80 ns | 100ns 35ns | Independent | 0.3 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| IR21271STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 9V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR21271SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | 600V | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LM5101ASD/NOPB | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 2.3V - | 4 ns | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 10-WDFN Exposed Pad | 10 | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 9V~14V | DUAL | 260 | 1 | 12V | 0.8mm | LM5101 | 8 | 2 | 3A | 2mA | 3A | 26 ns | 200μA | Non-Inverting | 4 ns | 430ns | 260 ns | TRUE | 430ns 260ns | Independent | 45 µs | 3A | N-Channel MOSFET | 3A 3A | YES | 45 µs | 118V | 800μm | 4mm | 4mm | 750μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
| MIC4422YM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | -40°C~150°C TJ | Tube | 2005 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 4.5V~18V | MIC4422 | 1 | 18V | 9A | 1 | 20V | 18V | 4.5V | 450μA | 1.04W | 9A | 60 ns | Non-Inverting | 60 ns | 75ns | 75 ns | 20ns 24ns | Single | 1 | IGBT, N-Channel MOSFET | 9A 9A | 1.48mm | 4.93mm | 3.94mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | FAN7888MX | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1V 2.5V | 240 ns | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 20-SOIC (0.295, 7.50mm Width) | 20 | 801mg | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 20 | EAR99 | Tin (Sn) | 8542.31.00.01 | 1.47W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | 1.27mm | FAN7888 | 650mA | 15V | 350μA | 1.8W | 650mA | 440 ns | Non-Inverting | 220 ns | 50ns | 30 ns | 50ns 30ns | 3-Phase | 6 | 0.22 µs | IGBT, N-Channel MOSFET | 350mA 650mA | 0.24 µs | TRANSIENT; UNDER VOLTAGE | 200V | 2.45mm | 12.8mm | 7.5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| IR2304STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | yes | 活跃 | 2 (1 Year) | 8 | EAR99 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2304SPBF | R-PDSO-G8 | Non-Inverting | 200ns 100ns | Independent | 2 | 0.13A | IGBT, N-Channel MOSFET | 60mA 130mA | YES | 0.33 µs | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FAN7362MX | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.9V | ACTIVE (Last Updated: 19 hours ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 143mg | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2007 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | FAN7362 | 1 | 500mA | 30μA | 625mW | 500mA | 550μA | 200 ns | Non-Inverting | 200 ns | 160ns | 100 ns | 70ns 30ns | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER | Single | 0.2 µs | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| AUIRS2181STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 0.8V 2.5V | 35 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2000 | 活跃 | 3 (168 Hours) | 8 | EAR99 | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | AU842992 | 2.3A | 15V | 625mW | 1.9A | 330 ns | Inverting | 35 ns | 60ns | 35 ns | 15ns 15ns | Independent | 2 | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRS21271STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 150 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | 125Ohm | Matte Tin (Sn) | 625mW | 9V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21271SPBF | 600mA | 120μA | 625mW | 200mA | 120μA | 200 ns | Non-Inverting | 150 ns | 130ns | 65 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 0.6A | IGBT, N-Channel MOSFET | 290mA 600mA | YES | 0.2 μs | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | IR2233SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2V | 950 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | 125°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 100Ohm | Matte Tin (Sn) | 8542.39.00.01 | 1.6W | 10V~20V | DUAL | 鸥翼 | 260 | 3 | 15V | 1.27mm | 30 | IR2233SPBF | 6 | 不合格 | 620V | 500mA | 15V | 100μA | 1.6W | 250mA | Inverting | 750 ns | 150ns | 70 ns | 90ns 40ns | 3-Phase | 1 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.95 μs | 1200V | 2.33mm | 18.0848mm | 7.5946mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
| IRS2104STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 150 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IRS2104SPBF | 不合格 | 20V | 600mA | 15V | 150μA | 625mW | 290mA | 270μA | 820 ns | Non-Inverting | 60 ns | 70ns | 35 ns | 70ns 35ns | Synchronous | 2 | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | MIC4416YM4-TR | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.4V | 42 ns | Industrial grade | 表面贴装 | 表面贴装 | TO-253-4, TO-253AA | 4 | SOT-143 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | IttyBitty® | 活跃 | 1 (Unlimited) | SMD/SMT | 85°C | -40°C | 600mW | 4.5V~18V | MIC4416 | 1 | 20V | 1.2A | 1 | 18V | 4.5V | 370μA | 1.2A | 60 ns | Non-Inverting | 42 ns | 18V | 24ns | 28 ns | 14ns 16ns | Single | 1 | N-Channel MOSFET | 1.2A 1.2A | 1.02mm | 2.92mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
| IR2308SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.9V | 200 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR2308SPBF | 2 | 620V | 350mA | 15V | 1.6mA | 625mW | 200mA | 300 ns | Non-Inverting | 220 ns | 20V | 220ns | 80 ns | 10V | 150ns 50ns | Independent | 0.3 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |