类别是'PMIC - 栅极驱动器'
PMIC - 栅极驱动器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 温度等级 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 输出电流 | 传播延迟 | 输入类型 | 接通延迟时间 | 上升时间 | 下降时间（典型值） | 上升/下降时间(Typ) | 接口IC类型 | 筛选水平 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 电源电压1-额定值 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||||
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 | MLX83100LGO-DBA-000-SP | Melexis Technologies NV | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 28-TSSOP (0.173, 4.40mm Width) | Half-Bridge | -40°C~175°C TJ | Bulk | 2016 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 4.5V~28V | 7ns 7ns | Independent | 4 | N-Channel MOSFET | 1.4A 1.6A | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 5962-8766001PA | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | 30 ns | Military grade | 通孔 | 通孔 | 8-CDIP (0.300, 7.62mm) | Half-Bridge | -55°C~125°C | Tube | 1996 | e0 | no | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 500mW | 4.5V~17V | DUAL | 240 | 2 | not_compliant | 20 | 8 | R-GDIP-T8 | 不合格 | 100mV | 4.5/15V | 7mA | 7mA | Inverting | 50 ns | 30ns | 30 ns | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | MIL-STD-883 Class B | Independent | 2 | 0.04 µs | N-Channel MOSFET | YES | 0.06 µs | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
 | ICL7667CPA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | Commercial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | High-Side or Low-Side | 0°C~70°C TA | Tube | 1999 | Obsolete | 1 (Unlimited) | 8 | 4.5V~15V | DUAL | 2 | ICL7667 | 8 | R-PDIP-T8 | Inverting | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | NO | 5.33mm | 9.585mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | MAX17600ATA+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.1V | 12 ns | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2012 | 活跃 | 1 (Unlimited) | EAR99 | 1.904W | 4V~14V | 未说明 | 未说明 | MAX17600 | 4A | 12mA | 18mA | 4A | Inverting | 12 ns | 6ns | 6 ns | 40ns 25ns | 基于半桥的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | HIP4086AB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 表面贴装 | 24-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tube | 2010 | Obsolete | 1 (Unlimited) | 24 | EAR99 | 8542.39.00.01 | 7V~15V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 1.27mm | 未说明 | HIP4086 | 24 | R-PDSO-G24 | Inverting, Non-Inverting | 20ns 10ns | 3-Phase | 6 | 0.158 μs | N-Channel MOSFET | 500mA 500mA | YES | 0.135 μs | 95V | 15.4mm | 7.5mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||
 | HIP6602BCBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | HIP6602B | Non-Inverting | 20ns 20ns | Synchronous | 4 | N-Channel MOSFET | 15V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ISL6605CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 鸥翼 | 未说明 | 1 | 5V | 未说明 | ISL6605 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | YES | 33V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| HIP6601BCBZA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | 8 | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| EL7242CNZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | Industrial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | 未说明 | 2 | 15V | 未说明 | EL7242 | 8 | R-PDIP-T8 | Inverting, Non-Inverting | 10ns 10ns | 和基于栅极的mosfet驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 5.33mm | 9.585mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| HIP4086ABT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 表面贴装 | 24-SOIC (0.295, 7.50mm Width) | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | EAR99 | 8542.39.00.01 | 7V~15V | 未说明 | 未说明 | HIP4086 | 24 | Inverting, Non-Inverting | 20ns 10ns | 3-Phase | 6 | N-Channel MOSFET | 500mA 500mA | 95V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ISL6613BIRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6613B | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISL6613IRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6613 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ISL6614AIRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | 10.8V~13.2V | ISL6614A | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MAX5048BAUT#TG16 | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 727mW | 4V~12.6V | DUAL | 鸥翼 | 260 | 1 | 12V | 0.95mm | 30 | MAX5048 | 6 | 7.6A | 1.5mA | Inverting, Non-Inverting | 82ns | 12.5 ns | 82ns 12.5ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.027 µs | 7.6A | N-Channel MOSFET | 1.3A 7.6A | YES | 0.027 µs | 2.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| ISL6610CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 2 (1 Year) | 14 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 260 | 1 | 5V | 1.27mm | 30 | ISL6610 | 14 | 不合格 | Non-Inverting | 8ns 8ns | 基于缓冲器或逆变器的MOSFET驱动器 | Synchronous | 4 | 4A | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 8.65mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
 | MAX15024CATB+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 ns | 表面贴装 | 表面贴装 | 10-WFDFN Exposed Pad | 10 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | Obsolete | 1 (Unlimited) | 10 | EAR99 | Matte Tin (Sn) | 1.4815W | 4.5V~28V | DUAL | 无铅 | 260 | 1 | 10V | 0.5mm | 未说明 | MAX15024 | 10 | 不合格 | 1.5mA | Inverting, Non-Inverting | 18 ns | 24ns | 16 ns | 24ns 16ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 32 µs | 8A | N-Channel MOSFET | 4A 8A | NO | 32 µs | 0.8mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
| ISL6612AIBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MAX5054AATA/V+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 35 ns | Automotive grade | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q100 | e3 | 不用于新设计 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.454W | 4V~15V | MAX5054 | 4A | 2.4mA | 4A | Inverting, Non-Inverting | 35 ns | 85ns | 75 ns | 32ns 26ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | 4A 4A | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| MAX15024AATB/V+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2V | 18 ns | Automotive grade | 表面贴装 | 表面贴装 | 10-WFDFN Exposed Pad | 10 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q100 | e3 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | Matte Tin (Sn) | 1.4815W | 4.5V~28V | DUAL | 无铅 | 未说明 | 1 | 10V | 0.5mm | 未说明 | MAX15024 | 10 | 不合格 | 8A | 1.5mA | Inverting, Non-Inverting | 18 ns | 24ns | 16 ns | 22ns 16ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.032 µs | 8A | N-Channel MOSFET | 4A 8A | NO | 0.032 µs | 0.8mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||
 | TC4627EOE713 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 0.8V 2.4V | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | High-Side or Low-Side | -40°C~85°C TA | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 16 | EAR99 | Matte Tin (Sn) | 760mW | 4V~6V | DUAL | 鸥翼 | 260 | 1 | 5V | unknown | 1MHz | 40 | TC4627 | 16 | 不合格 | 1.5A | 2.5mA | 760mW | 2.5mA | 55 ns | Non-Inverting | 55 ns | 40ns | 35 ns | 33ns 27ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.06 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | YES | 0.07 μs | 2.64mm | 7.495mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||
 | MAX17600AUA+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.1V | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2012 | 活跃 | 1 (Unlimited) | EAR99 | 4V~14V | 未说明 | 未说明 | MAX17600 | Inverting | 40ns 25ns | 基于半桥的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MAX17605AUA+T | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2V 4.25V | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2007 | 活跃 | 1 (Unlimited) | EAR99 | 4V~14V | 未说明 | 未说明 | MAX17605 | 4A | Inverting, Non-Inverting | 40ns 25ns | 基于半桥的mosfet驱动器 | Independent | 2 | IGBT, SiC MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IR2110STR | International Rectifier | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | SOIC | 16 | 10 ns | 卷带 | 2012 | e0 | no | 3 (168 Hours) | 16 | EAR99 | Tin/Lead (Sn/Pb) | 125°C | -40°C | DUAL | 鸥翼 | 245 | 1 | 15V | 30 | 16 | 不合格 | 2A | 15V | AUTOMOTIVE | 20V | 10V | 1.25W | 150 ns | 10 ns | 35ns | 25 ns | 基于半桥的mosfet驱动器 | Independent | 2 | 0.15 μs | 2.5A | YES | 10.3mm | 7.5mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
 | ISL6613BCRZ | Intersil (Renesas Electronics America) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | DFN | 10 | 1.5W | 2001 | e3 | 3 (168 Hours) | 10 | EAR99 | Matte Tin (Sn) - annealed | 85°C | 0°C | DUAL | 无铅 | 260 | 1 | 12V | 0.5mm | 40 | 10 | 不合格 | 3A | OTHER | 13.2V | 7V | 5mA | 3A | 26ns | 18 ns | 基于半桥的mosfet驱动器 | 2 | 3A | 12V | YES | 1mm | 3mm | 3mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | ISL6613BEIBZ | Intersil (Renesas Electronics America) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | SOIC | 8 | 2W | 2001 | e3 | yes | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | DUAL | 鸥翼 | 260 | 1 | 12V | 30 | 8 | 不合格 | 3A | INDUSTRIAL | 13.2V | 7V | 5mA | 3A | 26ns | 18 ns | 基于半桥的mosfet驱动器 | 2 | 3A | 12V | YES | 3.9mm | 符合RoHS标准 | 无铅 |