类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 产品类别 | 组织的记忆 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||
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 | CY14B101I-SFXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | CY14B101 | 16 | 不合格 | 3V | 3.6V | 3V | 2.7V | 2-Wire, I2C, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 3.4MHz | 900 ns | NVSRAM | I2C | 8b | 128KX8 | 8 | 1 Mb | 0.00025A | 2.667mm | 10.2865mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1381D-100BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2004 | e1 | yes | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | BOTTOM | 260 | 1 | 3.3V | 1mm | 40 | CY7C1381 | 165 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 175mA | 100MHz | 8.5ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 15mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C0832AV-133AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 120-LQFP | 120 | Volatile | -40°C~85°C TA | Tray | 2003 | e3 | Obsolete | 3 (168 Hours) | 120 | Matte Tin (Sn) | 流水线结构 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.4mm | 30 | CY7C0832 | 120 | 3.3V | 3.465V | 3.135V | 4.5Mb 256K x 18 | 2 | 300mA | 133MHz | 4.4 ns | SRAM | Parallel | 3-STATE | 18 | 36b | 4 Mb | 0.075A | COMMON | Synchronous | 18b | 3.14V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS66WV51216DBLL-70TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | Discontinued | 3 (168 Hours) | 44 | 2.5V~3.6V | DUAL | 1 | 3V | 0.8mm | 44 | 3.3V | 3.6V | 2.5V | 8Mb 512K x 16 | 1 | PSRAM | Parallel | 3-STATE | 16 | 70ns | 19b | 8 Mb | 70 ns | COMMON | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93H86RFVM-2CTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2012 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 0.65mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 16Kb 1K x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 1KX16 | 16 | 4ms | 0.00001A | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 0.9mm | 2.9mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS6C62256-55SINTR | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 28-SOIC (0.330, 8.38mm Width) | 28 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | yes | 活跃 | 3 (168 Hours) | 2.7V~5.5V | 未说明 | unknown | 未说明 | 3.3V | 256Kb 32K x 8 | SRAM | Parallel | 55ns | 256 kb | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24256-DRDW8TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | ACTIVE (Last Updated: 6 months ago) | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | M24256 | 不合格 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8 | 5ms | 0.000001A | 262144 bit | I2C | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24L02-W | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e2 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 2.54mm | 10 | BR24L02 | 8 | 不合格 | 5V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | 400 ms | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 3.7mm | 9.3mm | 7.62mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95640-RMN6P | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 30 | M95640 | 8 | 不合格 | 5V | SPI, Serial | 64Kb 8K x 8 | 5mA | SYNCHRONOUS | 20MHz | 80 ns | EEPROM | SPI | 8 | 5ms | 64 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R3235FM2IH0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2017 | MXSMIO™ | yes | 活跃 | 3 (168 Hours) | 8 | ALSO CONFIGURABLE AS 32MX1 | 1.65V~3.6V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 1.65V | SPI, Serial | 32Mb 4M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 8MX4 | 4 | 100μs, 4ms | 33554432 bit | 1.8V | 2 | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR93G76FVM-3AGTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 1.7V~5.5V | BR93G76 | Serial | 8Kb 512 x 16 | 3MHz | 200 ns | EEPROM | SPI | 5ms | 8 kb | 3-WIRE | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L1633EZUI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-UDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2017 | MXSMIO™ | 不用于新设计 | 8 | IT ALSO HAVE X 1 MEMORY WIDTH | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.8mm | R-PDSO-N8 | 3.6V | 2.7V | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 4MX4 | 4 | 50μs, 3ms | 16777216 bit | SERIAL | 2.7V | 2 | 0.6mm | 4mm | 4mm | Non-RoHS Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS25LP512M-RMLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | e3 | 活跃 | 3 (168 Hours) | 16 | 3A991.B.1.A | Tin (Sn) | 8542.32.00.51 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 10 | R-PDSO-G16 | 3.6V | 2.3V | 512Mb 64M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 64MX8 | 8 | 1.6ms | 536870912 bit | SERIAL | 3V | 1 | 2.65mm | 10.31mm | 7.49mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25Q80CTIG | GigaDevice Semiconductor (HK) Limited | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | 活跃 | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2.7V | 8Mb 1M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 8MX1 | 1 | 50μs, 2.4ms | 8388608 bit | SERIAL | 3.3V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C32M16MD1A-5BCNTR | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 60-VFBGA | Volatile | -30°C~85°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 3 (168 Hours) | 1.7V~1.9V | 未说明 | 未说明 | 512Mb 32M x 16 | 200MHz | 700ps | DRAM | Parallel | 15ns | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STK12C68-SF45 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 28-SOIC (0.342, 8.69mm Width) | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e3 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 20 | STK12C68 | 28 | 5V | 5V | 64Kb 8K x 8 | 65mA | NVSRAM | Parallel | 8b | 8KX8 | 8 | 45ns | 64 kb | 0.0015A | 45 ns | 8b | 2.794mm | 18.3895mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R1EX25016ATA00I#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 3.6V | 0.65mm | R1EX25016 | 8 | 5.5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 5MHz | EEPROM | SPI | 8 | 5ms | SPI | 5ms | 1.1mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R1635FZUIH0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2017 | MXSMIO™ | yes | 不用于新设计 | 3 (168 Hours) | 8 | ALSO CONFIGURABLE AS 16MX1 | 1.65V~3.6V | BOTTOM | 未说明 | 1 | 1.8V | 0.5mm | 未说明 | R-PBCC-B8 | 3.6V | 1.65V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 4MX4 | 4 | 100μs, 4ms | 16777216 bit | 1.8V | 2 | 0.6mm | 3mm | 2mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29LV160DTXBI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFBGA, CSPBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | MX29LV | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.8mm | 未说明 | 48 | R-PBGA-B48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 | ASYNCHRONOUS | FLASH | Parallel | 1MX16 | 16 | 70ns | 16 Mb | 0.000015A | 70 ns | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1049B-15VC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | YES | 36 | Volatile | 0°C~70°C TA | Tube | 2001 | e0 | no | Obsolete | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 225 | 1 | 5V | 1.27mm | not_compliant | 15GHz | 30 | CY7C1049 | 36 | 不合格 | 5.5V | 5V | 4.5V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 3-STATE | 8 | 15ns | 0.008A | 4194304 bit | 15 ns | COMMON | 4.5V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1412KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1412 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 700mA | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 40b | 36 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S70GL02GS12FHIV23 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | GL-S | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.71 | 1.65V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | 不合格 | 3.6V | 3/3.3V | 2.7V | 2Gb 128M x 16 | ASYNCHRONOUS | 0.16mA | 120ns | FLASH | Parallel | 128MX16 | 16 | 0.0002A | 3V | 8 | YES | YES | YES | 2K | 128K | 16/32words | YES | BOTTOM/TOP | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | BRCH064GWZ-3E2 | Rohm Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Non-Volatile | BRCH064 | 400 kHz | + 85 C | 5.5 V | - 40 C | 6000 | 500 uA | 1.6 V | SMD/SMT | I2C | 40 Year | BRCH064GWZ-3 | ROHM 半导体 | ROHM 半导体 | Details | VFBGA, | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 8000 | PLASTIC/EPOXY | -40 °C | 未说明 | 85 °C | 有 | BRCH064GWZ-3E2 | 0.4 MHz | 8192 words | VFBGA | RECTANGULAR | 活跃 | ROHM CO LTD | 2.37 | EEPROM | Production (Last Updated: 2 years ago) | 表面贴装 | 6-XFBGA, CSPBGA | YES | UCSP30L1A | 6 | Rohm Semiconductor | 活跃 | -40°C ~ 85°C (TA) | MouseReel | BRCH064GWZ-3 | Memory & Data Storage | 1.6V ~ 5.5V | BOTTOM | BALL | 未说明 | 1 | 0.4 mm | compliant | R-PBGA-B6 | 5.5 V | INDUSTRIAL | 1.6 V | 64Kbit | SYNCHRONOUS | 400 kHz | EEPROM | I2C | 8 k x 8 | 0.33 mm | 8 | 5ms | 64 kb | 65536 bit | SERIAL | EEPROM | I2C | 5 ms | EEPROM | 8K x 8 | 1.5 mm | 1 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL512SAGMFAG10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | Automotive, AEC-Q100, FL-S | e3 | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | ITS ALSO CONFIGURABLE AS 512MX1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 512Mb 64M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 512753664 bit | AEC-Q100; TS 16949 | SERIAL | 3V | 1 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX25U3235EM2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | MX25xxx35/36 - MXSMIO™ | e3 | yes | 不用于新设计 | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) | ALSO CONFIGURABLE AS 32M X 1 | 8542.32.00.51 | 1.65V~2V | DUAL | 260 | 1 | 1.8V | 1.27mm | unknown | 40 | 8 | R-PDSO-G8 | 不合格 | 1.8V | 2V | 1.65V | SPI, Serial | 32Mb 4M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 8MX4 | 4 | 30μs, 3ms | 32 Mb | 0.00002A | SPI | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | 2 | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | 无铅 |