类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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 | IS61WV12816DBLL-10BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 10 | 48 | 3.6V | 2.5/3.3V | 2.4V | 2Mb 128K x 16 | 1 | 65mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 17b | 2 Mb | 0.00007A | 100MHz | COMMON | Asynchronous | 16b | 2V | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LF25636A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | YES | 100 | 657.000198mg | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | 3.3V | 3.135V | 9Mb 256K x 36 | 4 | 185mA | 185mA | 117MHz | 7.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.085A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064N90TFA023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | Automotive, AEC-Q100, GL-N | 活跃 | 3 (168 Hours) | 56 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | R-PDSO-G56 | 3.6V | 2.7V | 64Mb 8M x 8 4M x 16 | ASYNCHRONOUS | FLASH | Parallel | 4MX16 | 16 | 90ns | 67108864 bit | 90 ns | 3V | 8 | BOTTOM/TOP | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1462KV25-167BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2015 | NoBL™ | 最后一次购买 | 3 (168 Hours) | 165 | 3A991.B.2.B | 流水线结构 | 8542.32.00.41 | 2.375V~2.625V | BOTTOM | 未说明 | 1 | 2.5V | 1mm | 未说明 | 2.625V | 2.375V | 36Mb 2M x 18 | 167MHz | 3.4ns | SRAM | Parallel | 2MX18 | 18 | 37748736 bit | 1.4mm | 17mm | 15mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C256B-90C1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | 0°C~70°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 90GHz | 未说明 | M27C256 | 32 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 30mA | 50mA | ASYNCHRONOUS | 90ns | EPROM | Parallel | 3-STATE | 8 | 256 kb | 0.0001A | COMMON | 3.56mm | 13.97mm | 11.43mm | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43DR16640B-25DBL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 84-TFBGA | 84 | Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 84 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 0.8mm | 不合格 | 1.8V | 1.9V | 1.7V | 1Gb 64M x 16 | 1 | 240mA | SYNCHRONOUS | 400MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 16b | 1 Gb | 0.015A | COMMON | 8192 | 48 | 48 | 1.2mm | 12.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | MX30UF4G18AB-XKI | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | -40°C | YES | 85°C | Tray | 2014 | e1 | 不用于新设计 | 63 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 1.8V | 0.8mm | 40 | R-PBGA-B63 | 1.95V | INDUSTRIAL | 1.7V | ASYNCHRONOUS | 512MX8 | 8 | 4294967296 bit | PARALLEL | FLASH | 1.8V | 1mm | 11mm | 9mm | Non-RoHS Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA160DT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25AA160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC040AT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.65mm | 40 | 25LC040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61DDB22M18A-250M3L | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | e1 | yes | Discontinued | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.71V~1.89V | BOTTOM | 260 | 1 | 1.8V | 40 | 165 | 1.8V | 36Mb 2M x 18 | 1 | 500mA | 250MHz | 8.4ns | SRAM | Parallel | 18 | 21b | 36 Mb | Synchronous | 18b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT24C16ZI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2012 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 260 | 1 | 3.3V | 0.65mm | CAT24C16 | 5V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 16KX1 | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010MMMR | 950μm | 3.1mm | 3.1mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGBHI213 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | FL-S | 活跃 | 3 (168 Hours) | 24 | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3V | 3.6V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 32MX4 | 4 | 32b | 128 Mb | 0.0001A | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 1.2mm | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL032P0XNFI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | FL-P | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 38mA | 104MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 4KX16 | 16 | 5μs, 3ms | 1b | 32 Mb | 0.00001A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 0.55mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT29F4G01AAADDHC:D | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3 Weeks | 表面贴装 | 表面贴装 | 63-VFBGA | 63 | Non-Volatile | 0°C~70°C TA | Bulk | 2008 | Obsolete | 3 (168 Hours) | 63 | 2.7V~3.6V | BOTTOM | 0.8mm | MT29F4G01 | 3.3V | SPI, Serial | 4Gb 4G x 1 | 50MHz | FLASH | SPI | 512MX8 | 8 | 4 Gb | 0.00005A | Synchronous | 1b | SPI | 100000 Write/Erase Cycles | 10 | HARDWARE | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W19B320ABT7H | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -20°C~85°C TA | Tray | 2005 | e3 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 哑光锡 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 70GHz | 40 | 48 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | FLASH | Parallel | 2MX16 | 16 | 70ns | 32 Mb | 0.000005A | 70 ns | 3V | 8 | YES | YES | YES | 863 | 8K64K | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA010AT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C31024B-15JCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 32-BSOJ (0.400, 10.16mm Width) | 32 | 32-SOJ | Volatile | 0°C~70°C TA | Tube | 2002 | 活跃 | 3 (168 Hours) | SMD/SMT | 70°C | 0°C | 3V~3.6V | 3.3V | Parallel | 3.6V | 3V | 1Mb 128K x 8 | 1 | 15ns | SRAM | Parallel | 15ns | 17b | 1 Mb | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W25X64VSFIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | SpiFlash® | e3 | Obsolete | 3 (168 Hours) | 16 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 16 | 3.3V | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 18mA | 75MHz | 7 ns | FLASH | SPI | 8MX8 | 8 | 3ms | 23b | 64 Mb | 0.00001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2.64mm | 10.285mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGMFM003 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2016 | Automotive, AEC-Q100, FL-S | e3 | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 32MX4 | 4 | 134217728 bit | SERIAL | 3V | 500ms | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LV2568L-10T | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | 0°C~70°C TA | Tray | e0 | no | 不用于新设计 | 2 (1 Year) | 44 | Tin/Lead (Sn/Pb) | 3.135V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 44 | 不合格 | 3.3V | 3.63V | 2.97V | 2Mb 256K x 8 | 1 | 60mA | SRAM | Parallel | 256KX8 | 3-STATE | 8 | 10ns | 18b | 2 Mb | 0.003A | COMMON | Asynchronous | 8b | 3V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26WF040B-104I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2014 | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 30 | SST26WF040 | 1.8V | 1.95V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 4MX1 | 1 | 1.5ms | 4 Mb | TS 16949 | 256B | 6mm | 5mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT24AA16WI-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 260 | 1 | 3.3V | 1.27mm | 40 | CAT24AA | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 1mA | 1MHz | 400ns | EEPROM | I2C | 无卤素 | 8 | 5ms | 16 kb | I2C | 5ms | 1.75mm | 4.9mm | 3.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1270KV18-400BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1270 | 165 | 1.8V | 36Mb 1M x 36 | 1 | 690mA | 400MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 36 Mb | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71321LA25JGI | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Industrial grade | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | Volatile | -40°C~85°C TA | Tube | 活跃 | 3 (168 Hours) | 4.5V~5.5V | IDT71321 | 16Kb 2K x 8 | 25ns | SRAM | Parallel | 25ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16400F-6TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 54 | 3.3V | 3.6V | 3V | 64Mb 4M x 16 | 1 | 140mA | 140mA | 166MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | 14b | 64 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 |