类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 引导模块 | 访问模式 | 反向引脚排列 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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.png) | M29F010B70K6F | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 128000 | PLASTIC/EPOXY | LDCC32,.5X.6 | -40 °C | 40 | 70 ns | 85 °C | 有 | M29F010B70K6F | 131072 words | 5 V | QCCJ | RECTANGULAR | STMicroelectronics | Obsolete | STMICROELECTRONICS | 5.42 | QFJ | YES | 32 | LEAD FREE, PLASTIC, LCC-32 | e3 | 有 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | 闪存 | CMOS | QUAD | J BEND | 250 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3.56 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 16K | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C76CT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C46BT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2002 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 0.5mm | 40 | 93C46B | 不合格 | 5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1165KV18-400BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1165 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 2 | 850mA | 400MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 17b | 18 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL116K0XNFI011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | FL1-K | e3 | Obsolete | 3 (168 Hours) | 8 | 哑光锡 | ALSO CONFIGURABLE AS 16M X 1 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 108MHz | 0.025mA | FLASH | SPI - Quad I/O | 4MX4 | 4 | 3ms | 24b | 16 Mb | 0.000005A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 6mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV102416DBLL-45TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 48 | 2.2V~3.6V | DUAL | 1 | 3.3V | 0.5mm | R-PDSO-G48 | 不合格 | 3.6V | 2.5/3.3V | 2.2V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 3-STATE | 16 | 45ns | 0.000025A | 16777216 bit | 45 ns | COMMON | 1.5V | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV1288BLL-55HLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 2 (1 Year) | 32 | EAR99 | 哑光锡 | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 32 | 3.3V | 3.6V | 2.5V | 1Mb 128K x 8 | 1 | 8mA | SRAM | Parallel | 8 | 55ns | 17b | 1 Mb | 55 ns | Asynchronous | 8b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62128BLL-70SXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | YES | Volatile | 0°C~70°C TA | Tube | 2005 | MoBL® | e4 | Obsolete | 1 (Unlimited) | 32 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | unknown | 70GHz | 20 | CY62128 | 32 | R-PDSO-G32 | 不合格 | 5V | 5V | 1Mb 128K x 8 | 0.015mA | SRAM | Parallel | 128KX8 | 3-STATE | 8 | 70ns | 0.000015A | 1048576 bit | 70 ns | COMMON | 2.997mm | 20.4465mm | 11.303mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62167DV18LL-55BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2003 | MoBL® | e1 | Obsolete | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.65V~2.25V | BOTTOM | 1 | 1.8V | 0.75mm | unknown | CY62167 | 48 | 不合格 | 1.8V | 16Mb 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 20b | 16 Mb | 55 ns | COMMON | Asynchronous | 16b | 1V | 9.5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STK14C88-C45I | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Lead, Tin | Surface Mount, Through Hole | 通孔 | 32-CDIP (0.300, 7.62mm) | 32 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e4 | no | Obsolete | 1 (Unlimited) | 32 | EAR99 | Gold (Au) | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 70mA | NVSRAM | Parallel | 8b | 8 | 45ns | 256 kb | 0.0015A | 45 ns | 8b | 4.11mm | 40.64mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C13201KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 1mm | unknown | CY7C13201 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 2 | 600mA | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 18 Mb | COMMON | Synchronous | 36b | 1.7V | 1.4mm | 15mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGBHIA13 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | FL-S | 活跃 | 3 (168 Hours) | 24 | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 64MX4 | 4 | 0.0001A | 268435456 bit | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST26VF016BT-104V/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | SST26VF016B | R-PDSO-G8 | 3.6V | 2.7V | SPI | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | 0.025mA | FLASH | SPI - Quad I/O | 16MX1 | 1 | 1.5ms | 0.000025A | 16777216 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C025-15AC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100-LQFP | YES | 100 | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 锡铅 | 中断标志 | 4.5V~5.5V | QUAD | 240 | 1 | 5V | 0.5mm | 15GHz | 30 | CY7C025 | 100 | 5V | 5V | 128Kb 8K x 16 | 2 | SRAM | Parallel | 8KX16 | 3-STATE | 16 | 15ns | 26b | 128 kb | 0.015A | 15 ns | COMMON | 2V | YES | 1.6mm | 14mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S79FL256SDSMFVG01 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | 2016 | FL-S | 活跃 | 3 (168 Hours) | 16 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 256Mb 32M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O | 32MX8 | 8 | 268435456 bit | SERIAL | 3V | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TMS626812-12ADGE | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 44 | Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C64D-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | e4 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | AT24C64D | R-PDSO-N8 | 5.5V | 1.7V | 64Kb 8K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8KX8 | 8 | 5ms | 65536 bit | SERIAL | I2C | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G46FVT-3AGE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | e3 | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | IT ALSO OPERATES AT 1MHZ AT 1.7 MIN | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 1Kb 64 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 64X16 | 16 | 5ms | 1024 bit | SERIAL | 3-WIRE | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT40A512M16JY-075E:B | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | 0°C~95°C TC | Tray | e1 | Obsolete | 96 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 1.14V~1.26V | BOTTOM | 1 | 1.2V | 0.8mm | R-PBGA-B96 | 1.26V | 1.14V | 8Gb 512M x 16 | 1 | SYNCHRONOUS | 1.33GHz | DRAM | Parallel | 512MX16 | 16 | 8589934592 bit | 多库页面突发 | 1.2mm | 14mm | 8mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25DF321A-MH-Y | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold | 表面贴装 | 表面贴装 | 8-UDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TC | Tray | 1997 | e4 | 不用于新设计 | 1 (Unlimited) | 8 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.7V | Serial | 32Mb 256Bytes x 16384 pages | 20mA | 100MHz | 5 ns | FLASH | SPI | 8b | 8 | 7μs, 3ms | 1b | 32 Mb | 0.00001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 0.6mm | 6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C04B-TSU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | SOT-23-5 Thin, TSOT-23-5 | 5 | SOT-23-5 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 1MHz | AT24C04 | 5V | 2-Wire, I2C, Serial | 5.5V | 1.8V | 4Kb 512 x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 4 kb | 400kHz | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167EV30LL-45BVIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e0 | no | 活跃 | 3 (168 Hours) | 48 | 锡铅 | IT ALSO OPERATES AT 2.2V TO 3.6V | 2.2V~3.6V | BOTTOM | 220 | 1 | 3V | 0.75mm | CY62167 | 3V | 3.6V | 2.2V | 16Mb 2M x 8 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 20b | 16 Mb | 45 ns | COMMON | Asynchronous | 8 | 8mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1525KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | yes | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 20 | CY7C1525 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 8M x 9 | 2 | 730mA | 300MHz | 450 ps | SRAM | Parallel | 8MX9 | 3-STATE | 9 | 22b | 72 Mb | SEPARATE | Synchronous | 9b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL512SDPMFIG10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | R-PDSO-G16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 66MHz | 0.075mA | FLASH | SPI - Quad I/O | 64MX8 | 8 | 0.0003A | 512753664 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C32M16D1-5BCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 60-TFBGA | YES | 60 | Volatile | 0°C~70°C TA | Tray | 2013 | 活跃 | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 2.3V~2.7V | BOTTOM | 未说明 | 1 | 2.5V | 未说明 | 2.5V | 2.7V | 2.3V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 200MHz | 700ps | DRAM | Parallel | 32MX16 | 16 | 15ns | 13b | 512 Mb | 1.2mm | 13mm | ROHS3 Compliant | 无铅 |