类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||
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 | CY15B004Q-SXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tube | 2017 | Automotive, AEC-Q100, F-RAM™ | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 3V | 4Kb 512 x 8 | SYNCHRONOUS | 16MHz | FRAM | SPI | 512X8 | 8 | 4096 bit | 1.727mm | 4.889mm | 3.8985mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C027-15AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 1997 | e4 | Obsolete | 3 (168 Hours) | 100 | Nickel/Palladium/Gold (Ni/Pd/Au) | FLOW-THROUGH | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.5mm | 40 | CY7C027 | 100 | 5V | 5V | 512Kb 32K x 16 | 2 | SRAM | Parallel | 3-STATE | 16 | 15ns | 30b | 512 kb | 0.0015A | 15 ns | COMMON | Asynchronous | 16b | 2V | 1.6mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS6C8016A-55ZIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 1997 | e3/e6 | yes | 活跃 | 3 (168 Hours) | 44 | PURE MATTE TIN/TIN BISMUTH | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 44 | R-PDSO-G44 | 3.3V | 3.6V | 2.7V | 8Mb 512K x 16 | 1 | SRAM | Parallel | 16 | 55ns | 19b | 8 Mb | 55 ns | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C8M16SA-6TCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2014 | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | R-PDSO-G54 | 3.6V | 3V | 128Mb 8M x 16 | 1 | SYNCHRONOUS | 166MHz | 5ns | DRAM | Parallel | 8MX16 | 16 | 12ns | 134217728 bit | 1.2mm | 22.22mm | 10.16mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS7C31026B-10TCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP2 | Volatile | 0°C~70°C TA | Tray | 1996 | 活跃 | 3 (168 Hours) | 70°C | 0°C | 3V~3.6V | 3.3V | Parallel | 3.6V | 3V | 1Mb 64K x 16 | 1 | 10ns | SRAM | Parallel | 10ns | 16b | 1 Mb | 1.05mm | 18.52mm | 10.26mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16320D-7BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 54-TFBGA | YES | 54 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e1 | yes | 活跃 | 3 (168 Hours) | 54 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 225 | 1 | 3.3V | 0.8mm | 未说明 | 不合格 | 3.6V | 3.3V | 3V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 0.004A | 536870912 bit | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL01GT11TFIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2007 | GL-T | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 1.65V~3.6V | DUAL | 1 | 3V | 0.5mm | R-PDSO-G56 | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | 110ns | FLASH | Parallel | 64MX16 | 16 | 60ns | 1073741824 bit | 2.7V | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1412BV18-200BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | 锡铅 | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1412 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 725mA | 200MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | 0.37A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1525JV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 1mm | unknown | CY7C1525 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 72Mb 8M x 9 | 2 | 1.255A | 250MHz | 450 ps | SRAM | Parallel | 8MX9 | 3-STATE | 9 | 21b | 72 Mb | SEPARATE | Synchronous | 9b | 1.7V | 1.4mm | 17mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SDSMFB010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | Automotive, AEC-Q100, FL-S | 活跃 | 3 (168 Hours) | 16 | ALSO CONFIGURABLE AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 256Mb 32M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O | 64MX4 | 4 | 268435456 bit | SERIAL | 3V | 500ms | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL127SABMFV000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2015 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | R-PDSO-G16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | SYNCHRONOUS | 108MHz | 0.063mA | FLASH | SPI - Quad I/O | 16MX8 | 8 | 0.0003A | 134217728 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 5962-3829409MZA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Volatile | 活跃 | Tube | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | SRAM | 通孔 | 28-CDIP (0.300", 7.62mm) | 28-CDIP | Renesas Electronics America Inc | 5962-3829409 | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 64Kbit | 55 ns | SRAM | Parallel | 8 k x 8 | 55ns | SRAM | 8K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C32M16D2A-25BAN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 84-TFBGA | YES | Volatile | -40°C~105°C TC | Tray | 2014 | 活跃 | 3 (168 Hours) | 84 | EAR99 | AUTO/SELF REFRESH | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | R-PBGA-B84 | 1.9V | 1.7V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 400MHz | 400ps | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | 1.2mm | 12.5mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28BV64B-20JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 2 (1 Year) | 32 | 2.7V~3.6V | QUAD | 1 | 3V | 1.27mm | 3.3V | 3.6V | 2.7V | 64Kb 8K x 8 | 15mA | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 8KX8 | 8 | 10ms | 64 kb | 3V | 10ms | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 34AA02T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 34AA02 | 8 | 不合格 | 5V | 1.7V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C02CT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C02C | 8 | 5V | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 1ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MD27C64-25/B | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Bulk | Rochester Electronics, LLC | MD27C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N90TFI033 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | GL-N | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 863 | 8K64K | 8/16words | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV12816DBLL-10BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 哑光锡 | 3V~3.6V | BOTTOM | 225 | 1 | 3.3V | 0.75mm | 3.6V | 2.5/3.3V | 2.4V | 2Mb 128K x 16 | 1 | 65mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 17b | 2 Mb | 0.00007A | COMMON | Asynchronous | 16b | 2V | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1360C-200BGC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 119-BGA | 119 | Volatile | 0°C~70°C TA | Tray | e0 | no | 活跃 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.6V | BOTTOM | 220 | 1 | 3.3V | 1.27mm | 20 | CY7C1360 | 119 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 220mA | 200MHz | 3ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 22mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1512V18-167BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1512 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 167MHz | 500 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 22b | 72 Mb | SEPARATE | 1.7V | 1.4mm | 17mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-3829417MZA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Tube | 5962-3829417 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | SRAM | 通孔 | 28-CDIP (0.300", 7.62mm) | 28-CDIP | Renesas Electronics America Inc | Volatile | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 64Kbit | 19 ns | SRAM | Parallel | 8 k x 8 | 20ns | SRAM | 8K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G66FVT-3AGE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | ALSO AVAILABLE 1.7V-2.5V OPERATES WITH 1MHZ, 2.5V-4.5V OPERATES WITH 2MHZ | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 4Kb 256 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 256X16 | 16 | 5ms | 4096 bit | SERIAL | 3-WIRE | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93H76RF-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2012 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 8Kb 512 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 512X16 | 16 | 4ms | 0.00001A | SERIAL | MICROWIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF032BAT-104I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | SST26VF032 | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 32Mb 4M x 8 | SYNCHRONOUS | 104MHz | 0.02mA | 8 ns | FLASH | SPI - Quad I/O | 32MX1 | 1 | 1.5ms | 32 Mb | 0.000045A | TS 16949 | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | 2.03mm | 5.26mm | 5.25mm | ROHS3 Compliant |