类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 内存大小 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 定时器/计数器的数量 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 核心架构 | 最高频率 | 访问时间(最大) | 并行/串行 | I/O类型 | 可编程I/O数 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||||||||||||||||||||||||
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![]() | 11LC080T-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 11LC080 | 8 | 5V | Serial | 5mA | 8Kb 1K x 8 | 100kHz | EEPROM | 单线 | 8 | 5ms | 8 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62147GE30-45ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 2012 | MoBL® | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | DUAL | 未说明 | 1 | 3V | 0.8mm | 未说明 | CY62147 | R-PDSO-G44 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 45ns | 4194304 bit | 45 ns | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25SF081-SHD-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | Non-Volatile | -40°C~85°C TC | Tube | 2014 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | 2.5V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.3V | 3.6V | 2.5V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | 8 ns | FLASH | SPI | 8MX1 | 1 | 5μs, 5ms | 64 Mb | 3V | 256B | 2.16mm | 5.29mm | 5.24mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC014HT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.65mm | 40 | 24LC014H | 8 | 不合格 | 5V | I2C, Serial | 3mA | 1Kb 128 x 8 | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 1 kb | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC76AT-I/OTG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROHS COMPLIANT, PLASTIC, SOT-23, 6 PIN | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | 1 | 1000 | PLASTIC/EPOXY | TSOP5/6,.11,37 | -40 °C | 40 | 85 °C | 有 | 93LC76AT-I/OTG | 2 MHz | 1024 words | 3 V | LSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.31 | SOT-23 | YES | 6 | 6 | Compliant | Tape & Reel (TR) | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.95 mm | compliant | 3 MHz | 6 | R-PDSO-G6 | 不合格 | 5.5 V | 3/5 V | INDUSTRIAL | 2.5 V | Serial | 5.5 V | 2.5 V | 1 kB | SYNCHRONOUS | 0.003 mA | 5 ms | 1KX8 | 1.45 mm | 8 | 8 kb | 0.000001 A | 8192 bit | 2 MHz | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 5 ms | 200 | SOFTWARE | 2.9 mm | 1.55 mm | 无 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA040-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES | 1.8V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 25AA040 | 8 | 5.5V | 2/5V | SPI, Serial | 5mA | 4Kb 512 x 8 | 1MHz | 475 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC46BT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 0.5mm | 40 | 93LC46B | 不合格 | 3/5V | Serial | 2mA | 1Kb 64 x 16 | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT34C04-SS5M-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -20°C~125°C TA | Tube | 2012 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~3.6V | DUAL | 1 | 2V | 1.27mm | AT34C04 | R-PDSO-G8 | 不合格 | 3.6V | 1.8/3.3V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | EEPROM | I2C | 4KX1 | 1 | 5ms | 4 kb | 0.000003A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | SOFTWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24AA52T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 0.5mm | 24AA52 | 不合格 | 2/5V | I2C, Serial | 3mA | 2Kb 256 x 8 | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 200 | HARDWARE/SOFTWARE | 1010DDDR | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA86AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA86A | 8 | 不合格 | 5V | Serial | 3mA | 16Kb 2K x 8 | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29AL016J55TFNR10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~125°C TA | Tray | AL-J | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | 3V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 3.3V | 3.6V | 3V | 16Mb 2M x 8 1M x 16 | 0.03mA | FLASH | Parallel | 1MX16 | 16 | 55ns | 16 Mb | 0.000005A | 55 ns | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC080BT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 有 | 68B | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1W | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC080B | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 6mA | 8Kb 1K x 8 | 10MHz | 100 ns | EEPROM | SPI | 8b | 8 | 1 | 5ms | 8 kb | PIC | 13 | SPI | 5ms | 200 | HARDWARE/SOFTWARE | 4.4mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC080BT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC080B | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 6mA | 8Kb 1K x 8 | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62WV1288DBLL-45TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 32 | 2.3V~3.6V | DUAL | 0.5mm | 不合格 | 2.5/3.3V | 1Mb 128K x 8 | SRAM | Parallel | 128KX8 | 3-STATE | 8 | 45ns | 0.000004A | 1048576 bit | 45 ns | COMMON | 1.2V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29AS008J70BFI040 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | AS-J | Obsolete | 3 (168 Hours) | EAR99 | 8542.32.00.51 | 1.65V~1.95V | 1.8V | 12mA | 8Mb 1M x 8 512K x 16 | FLASH | Parallel | 70ns | 8 Mb | Asynchronous | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62WV1288DBLL-45HLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | YES | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 不用于新设计 | 3 (168 Hours) | 32 | 2.3V~3.6V | DUAL | 0.5mm | 不合格 | 2.5/3.3V | 1Mb 128K x 8 | SRAM | Parallel | 128KX8 | 3-STATE | 8 | 45ns | 0.000004A | 1048576 bit | 45 ns | COMMON | 1.2V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS6C1008-55SINTR | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2006 | yes | 活跃 | 3 (168 Hours) | 2.7V~5.5V | 未说明 | unknown | 未说明 | 3V | 1Mb 128K x 8 | SRAM | Parallel | 55ns | 1 Mb | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M25P16-VMN3PB | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2015 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M25P16 | 8 | 3.3V | 2.7V | SPI, Serial | 8mA | 16Mb 2M x 8 | 75MHz | 15 ns | FLASH | SPI | 8 | 15ms, 5ms | 1b | 16 Mb | 0.0001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.75mm | 4.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GD25Q32CSIG | GigaDevice Semiconductor (HK) Limited | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | 活跃 | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 1 | 3.3V | 1.27mm | R-PDSO-G8 | 3.6V | 2.7V | 32Mb 4M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 32MX1 | 1 | 50μs, 2.4ms | 0.000005A | 33554432 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM/TOP | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL128SAGNFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | 8-WSON (6x8) | Non-Volatile | -40°C~85°C TA | Tray | 2014 | FL-S | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | 133MHz | SPI, Serial | 3.6V | 2.7V | 75mA | 128Mb 16M x 8 | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 1b | 128 Mb | 133MHz | Synchronous | 1b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL132K0XBHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | FL1-K | e1 | Obsolete | 3 (168 Hours) | 24 | 锡银铜 | ALSO CONFIGURABLE AS 32M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 108MHz | 0.025mA | FLASH | SPI - Quad I/O | 8MX4 | 4 | 3ms | 32 Mb | 0.000005A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 1.2mm | 8mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R1LV0108ESA-7SI#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | yes | 活跃 | 1 (Unlimited) | 32 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | R1LV0108E | 32 | R-PDSO-G32 | 3V | 3.6V | 2.7V | 1 | 1Mb 128K x 8 | 0.025mA | SRAM | Parallel | 3-STATE | 8 | 70ns | 17b | 1 Mb | 0.000002A | 70 ns | COMMON | 2V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62148G30-45SXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | YES | Volatile | -40°C~85°C TA | Tube | 2012 | MoBL® | 活跃 | 3 (168 Hours) | 32 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G32 | 3.6V | 2.2V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 8 | 45ns | 4194304 bit | 45 ns | 2.997mm | 20.446mm | 11.303mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M27W401-80K6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TA | Tube | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V | 2.7V~3.6V | QUAD | 260 | 1 | 3V | 1.27mm | 80GHz | 10 | M27W401 | 32 | 不合格 | 3.6V | 3/3.3V | 2.7V | 50mA | 50mA | 4Mb 512K x 8 | ASYNCHRONOUS | 80ns | EPROM | Parallel | 512KX8 | 3-STATE | 8 | 4 Mb | 0.000015A | COMMON | 3.56mm | 13.97mm | 11.43mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GD25Q80CSIG | GigaDevice Semiconductor (HK) Limited | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | 活跃 | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2.7V | 8Mb 1M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 8MX1 | 1 | 50μs, 2.4ms | 8388608 bit | SERIAL | 3.3V | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant |