类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 页面尺寸 | 环境温度范围高 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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BR24G02NUX-3ATTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 0.5mm | 未说明 | BR24G02 | R-PDSO-N8 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 256X8 | 8 | 5ms | 2 kb | I2C | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
MR25H256CDF | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | 600mW | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 2.7V | SPI, Serial | 256Kb 32K x 8 | 27mA | 40MHz | 10 ns | RAM | SPI | 8b | 8 | 256 kb | 8b | 0.9mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1009D-10VXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 32-BSOJ (0.300, 7.62mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | 1996 | e4 | yes | 活跃 | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY7C1009 | 32 | 5V | 5V | 5V | 1Mb 128K x 8 | 1 | 80mA | SRAM | Parallel | 3-STATE | 10ns | 17b | 1 Mb | 0.003A | 100MHz | COMMON | Asynchronous | 8b | 3.556mm | 21.08mm | 7.747mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
24AA16-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Non-Volatile | -40°C~125°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1 MILLION ERASE/WRITE CYCLES | 8542.32.00.51 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA16 | 8 | S-PDSO-G8 | 不合格 | 5.5V | 2/5V | 1.8V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 2KX8 | 8 | 5ms | 0.000005A | 16384 bit | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
CY7C1354CV25-166AXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2004 | NoBL™ | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 20 | CY7C1354 | 2.5V | 2.625V | 2.375V | 9Mb 256K x 36 | 4 | 180mA | 166MHz | 3.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 2.38V | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
CY7C1440KV33-250AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2013 | 活跃 | 3 (168 Hours) | 100 | 3A991 | 流水线结构 | 8542.32.00.41 | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | R-PQFP-G100 | 3.6V | 3.135V | 36Mb 1M x 36 | 250MHz | 2.6ns | SRAM | Parallel | 1MX36 | 36 | 37748736 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1412AV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1412 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 850mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | 0.35A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||
IDT71256SA20Y | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28-SOJ | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 4.5V~5.5V | IDT71256 | 256Kb 32K x 8 | 20ns | SRAM | Parallel | 20ns | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1392KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1392 | 不合格 | 1.8V | 1.9V | 1.7V | 16Mb 2M x 8 | 2 | 370mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 8 | 20b | 18 Mb | SEPARATE | Synchronous | 8b | 1.7V | 1.4mm | 15mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
AT45DB161E-SHF-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | 活跃 | 1 (Unlimited) | 8 | 2.3V~3.6V | DUAL | 260 | 1 | 2.5V | 1.27mm | 未说明 | 不合格 | 3.6V | 2.5/3.3V | 2.3V | SPI, Serial | 16Mb 528Bytes x 4096 pages | 23mA | 22mA | 85MHz | 8 ns | FLASH | SPI | 8b | 16MX1 | 1 | 8μs, 4ms | 21b | 16 Mb | 0.00001A | Synchronous | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 528B | 2.16mm | 5.29mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
R1LP0408DSP-7SI#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.450, 11.40mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | yes | 不用于新设计 | 1 (Unlimited) | 32 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 未说明 | R1LP0408 | 32 | 不合格 | 5V | 5V | 4Mb 512K x 8 | 1 | 25mA | SRAM | Parallel | 3-STATE | 8 | 70ns | 19b | 4 Mb | 70 ns | COMMON | Asynchronous | 8b | 2V | 3.05mm | 20.75mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
AT24C256-10PU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 8-DIP (0.300, 7.62mm) | 8-PDIP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 2.7V~5.5V | AT24C256 | 256Kb 32K x 8 | 1MHz | 550ns | EEPROM | I2C | 10ms | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M25P128-VME6GB | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | yes | Obsolete | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M25P128 | 8 | 3.3V | 2.7V | 128Mb 16M x 8 | 20mA | 54MHz | 8 ns | FLASH | SPI | 8 | 15ms, 5ms | 1b | 128 Mb | 0.0001A | SERIAL | Synchronous | 8b | SPI | 10000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 85°C | 1mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
AT25SF321-SSHD-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2012 | yes | Obsolete | 1 (Unlimited) | 8 | 2.5V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2.5V | 32Mb 4M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 32MX1 | 1 | 5μs, 5ms | 33554432 bit | SERIAL | 3V | 1.75mm | 4.925mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
MX25L6436EM2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2013 | MX25xxx35/36 - MXSMIO™ | 不用于新设计 | 8 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 8 | R-PDSO-G8 | 不合格 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | FLASH | SPI | 16MX4 | 4 | 300μs, 5ms | 64 Mb | 0.00002A | 104MHz | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 100ms | 20 | HARDWARE/SOFTWARE | 1 | 2.16mm | 5.28mm | 5.23mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
93LC46AXT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC46A | 8 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
93LC46AT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC46A | 8 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
CY14B101LA-BA25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY14B101 | 48 | 不合格 | 3V | 2.7V | 3.6V | 1Mb 128K x 8 | 70mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 128KX8 | 8 | 25ns | 1 Mb | 0.005A | 25 ns | 8b | 1.2mm | 10mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
25LC010AT-E/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
MX25L3233FZNI-08G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2009 | MXSMIO™ | 活跃 | 3 (168 Hours) | 8 | ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT | 2.65V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-N8 | 3.6V | 2.65V | 32Mb 8M x 4 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 8MX4 | 4 | 50μs, 1.2ms | 33554432 bit | SERIAL | 3V | 2 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
93LC86BT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC86B | 8 | 不合格 | 5V | Serial | 16Kb 1K x 16 | 3mA | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
93C76CT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
34LC02T-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.2V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 34LC02 | 8 | 不合格 | 5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
93C66CT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66C | 8 | 5V | 5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
AT29C040A-12TU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | Non-Volatile | -40°C~85°C TC | Tray | 1996 | Obsolete | 3 (168 Hours) | 4.5V~5.5V | AT29C040 | 4Mb 512K x 8 | 120ns | FLASH | Parallel | 10ms | ROHS3 Compliant |