类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 模拟 IC - 其他类型 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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![]() | S25FL512SAGBHIS10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | 24 | 24-BGA (8x6) | Non-Volatile | -40°C~85°C TA | Tray | FL-S | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | 133MHz | SPI, Serial | 512Mb 64M x 8 | 133MHz | FLASH | SPI - Quad I/O | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11AA160T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11AA160 | 8 | 5.5V | 2/5V | Serial | 16Kb 2K x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL512S10GHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 56-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.8mm | 未说明 | R-PBGA-B56 | 不合格 | 3.6V | 3/3.3V | 2.7V | 512Mb 32M x 16 | ASYNCHRONOUS | 0.08mA | 100ns | FLASH | Parallel | 32MX16 | 16 | 60ns | 0.0001A | 536870912 bit | 2.7V | YES | YES | YES | 512 | 64K | 16words | YES | BOTTOM/TOP | YES | 1mm | 9mm | 7mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C010-12TU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 32 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | R-PDSO-G32 | 5.5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | 120ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1048576 bit | 5V | 10ms | 1.2mm | 18.4mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF3202C-70-4I-EKE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | SST39 MPF™ | e3 | 活跃 | 1 (Unlimited) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 0.5mm | SST39VF3202C | 不合格 | 3.3V | 32Mb 2M x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 2MX16 | 16 | 10μs | 21b | 32 Mb | 0.00005A | Asynchronous | 16b | YES | YES | YES | 863 | 4K32K | YES | TOP | YES | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93G56FJ-3GTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED, ALSO AVAILABLE 1.7V-2.5V OPERATES WITH 1MHZ, 2.5V-4.5V OPERATES WITH 2MHZ | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 2Kb 256 x 8 128 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 128X16 | 16 | 5ms | 2048 bit | SERIAL | 3-WIRE | 5ms | 8 | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS6C4016-55ZIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 2008 | yes | 活跃 | 3 (168 Hours) | 44 | EAR99 | 8542.32.00.32 | 2.7V~5.5V | DUAL | 260 | 1 | 3V | 0.8mm | 40 | 44 | 3V | 5.5V | 3/5V | 2.7V | 4Mb 256K x 16 | 1 | SRAM | Parallel | 3-STATE | 55ns | 18b | 4 Mb | 0.00003A | 18MHz | 55 ns | COMMON | 2V | 1.05mm | 18.6mm | 10.3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MR0A16ACYS35 | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | 活跃 | 3 (168 Hours) | 44 | SMD/SMT | EAR99 | 8542.32.00.71 | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | 44 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 105mA | 165mA | RAM | Parallel | 16b | 64KX16 | 16 | 35ns | 1 Mb | 0.028A | 35 ns | 16b | 1.2mm | 18.41mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39WF1602-70-4I-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | 活跃 | 3 (168 Hours) | 48 | 1.65V~1.95V | BOTTOM | 1.8V | 0.8mm | SST39WF1602 | 1.8V | 16Mb 1M x 16 | 10mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 40μs | 20b | 16 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | TOP | YES | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT24CS64-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~5.5V | DUAL | 1 | 2.5V | 0.5mm | AT24CS64 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 8 | 5ms | 65536 bit | I2C | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST26VF064BA-104I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Automotive grade | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2016 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | SST26VF064 | 3V | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 64 Mb | TS 16949 | 3V | 256B | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT93C46BVI-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | CAT93C46 | 8 | 5.5V | 1Kb 128 x 8 64 x 16 | SYNCHRONOUS | 4MHz | EEPROM | SPI | 64X16 | 16 | 5ms | 1024 bit | SERIAL | MICROWIRE | 8 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY14B104NA-ZSP45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | e3 | 活跃 | 3 (168 Hours) | 54 | 3A991.B.2.A | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 54 | 不合格 | 3V | 3.6V | 2.7V | 4Mb 256K x 16 | 52mA | ASYNCHRONOUS | NVSRAM | Parallel | 16b | 256KX16 | 16 | 45ns | 4 Mb | 0.005A | 45 ns | 16b | 1.2mm | 22.415mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 23A512-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.7V~2.2V | DUAL | 260 | 1 | 1.27mm | 40 | 23A512 | 2.2V | 1.7V | 512Kb 64K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 8 | TS 16949 | SERIAL | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FM25H20-GTR | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | F-RAM™ | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 20 | FM25H20 | 8 | 3V | 3.6V | 2.7V | 2-Wire, SPI, Serial | 2Mb 256K x 8 | 10mA | 40MHz | 9 ns | FRAM | SPI | 8b | 8 | 2 Mb | 0.00027A | 8b | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC080DT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25LC080D | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1399B-15ZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | 28 | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | 3V~3.6V | DUAL | 240 | 1 | 3.3V | 0.55mm | not_compliant | 15GHz | 30 | CY7C1399 | 28 | 不合格 | 3.3V | 3.6V | 3V | 256Kb 32K x 8 | 1 | 50mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 15ns | 15b | 256 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1351G-100AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流线型结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1351 | 100 | 3.3V | 3.6V | 3.135V | 4.5Mb 128K x 36 | 4 | 205mA | 100MHz | 8ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W9812G6JB-6I | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | -40°C~85°C TA | Tray | 2010 | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.8mm | unknown | 未说明 | 54 | 不合格 | 3.3V | 3.6V | 3V | 128Mb 8M x 16 | 1 | 75mA | SYNCHRONOUS | 166MHz | 5ns | DRAM | Parallel | 8MX16 | 3-STATE | 16 | 14b | 128 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M27C512-12C6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 32 | EAR99 | Tin/Lead (Sn/Pb) | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 120GHz | 未说明 | M27C512 | 32 | 不合格 | 5V | 5V | 512Kb 64K x 8 | 50mA | ASYNCHRONOUS | 120ns | EPROM | Parallel | 64KX8 | 3-STATE | 8 | 512 kb | 0.0001A | COMMON | 3.56mm | 13.97mm | 11.43mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT27C080-90JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 32 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | R-PQCC-J32 | 5.5V | 4.5V | 8Mb 1M x 8 | 模拟电路 | 90ns | EPROM | Parallel | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX60LF8G18AC-XKI | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | -40°C | YES | 85°C | Tray | 2015 | 活跃 | 63 | 3A991.B.1.A | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 3V | 0.8mm | 40 | R-PBGA-B63 | 3.6V | INDUSTRIAL | 2.7V | ASYNCHRONOUS | 1GX8 | 8 | 8589934592 bit | PARALLEL | FLASH | 3V | 1mm | 11mm | 9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 34AA02-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 34AA02 | 8 | 不合格 | 5V | 1.7V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C2670KV18-550BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead/Silver (Sn/Pb/Ag) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | not_compliant | 30 | CY7C2670 | 165 | 不合格 | 1.8V | 144Mb 4M x 36 | 1 | 1.14A | 550MHz | 50 ns | SRAM | Parallel | 4MX36 | 3-STATE | 36 | 21b | 144 Mb | COMMON | Synchronous | 36b | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62157EV30LL-45ZXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Volatile | -40°C~85°C TA | Tray | 2011 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 48 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | CY62157 | 48 | 3V | 3.6V | 2.2V | 8Mb 512K x 16 | 1 | 25mA | SRAM | Parallel | 3-STATE | 45ns | 19b | 8 Mb | 0.000005A | 45 ns | COMMON | Asynchronous | 16b | 1.05mm | 12mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 |