类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | CY62148ELL-45ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | 2007 | MoBL® | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 22.22MHz | 30 | CY62148 | 32 | 5V | 5V | 4Mb 512K x 8 | 1 | 15mA | SRAM | Parallel | 3-STATE | 45ns | 19b | 4 Mb | 0.000007A | 45 ns | COMMON | Asynchronous | 8b | 2V | 85°C | 1.2mm | 20.95mm | 10.16mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | 93AA46T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 1.8V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA46 | 8 | 5.5V | 2/5V | Serial | 1Kb 128 x 8 64 x 16 | 3mA | 2MHz | 2 μs | EEPROM | SPI | 64X16 | 3-STATE | 16 | 10ms | 1 kb | 0.00003A | MICROWIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | 25AA020AT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 8-WFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25AA020A | 8 | 不合格 | 5.5V | 2/5V | SPI, Serial | 2Kb 256 x 8 | 5mA | SYNCHRONOUS | 10MHz | 50 ns | EEPROM | SPI | 5ms | 2 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 750μm | 2mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62157ESL-45ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tube | 2001 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | IT ALSO OPERATES AT 5V SUPPLY | 2.2V~5.5V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62157 | 44 | 3.6V | 2.5/5V | 2.2V | 8Mb 512K x 16 | 1 | 25mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 19b | 8 Mb | 0.000005A | 22MHz | 45 ns | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28BV256-20SU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | 活跃 | 2 (1 Year) | 28 | 自动写入 | 2.7V~3.6V | DUAL | 250 | 1 | 3V | 1.27mm | 5MHz | 40 | AT28BV256 | 3.3V | 3.6V | 2.7V | 256Kb 32K x 8 | 15mA | 200ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 256 kb | 0.00002A | 3V | 10000 Write/Erase Cycles | 10ms | 10 | HARDWARE/SOFTWARE | YES | YES | NO | 64words | 2.65mm | 17.9mm | 7.5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | S25FL132K0XMFI011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 506.605978mg | Non-Volatile | -40°C~85°C TA | Tube | 2013 | FL1-K | e3 | Obsolete | 3 (168 Hours) | 8 | ALSO CONFIGURABLE AS 32M X 1 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 25mA | 18mA | 108MHz | 8.5 ns | FLASH | SPI - Quad I/O | 8b | 4 | 3ms | 24b | 32 Mb | 0.000005A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 2.159mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | LE24CBK23MC-AH | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 2.5V~5.5V | 8 | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 400kHz | 900ns | EEPROM | I2C | 无卤素 | 5ms | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G16FJ-3GTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | 计算坐高 | 1.6V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | BR24G16 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | I2C | 5ms | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95256-DFCS6TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-UFBGA, WLCSP | YES | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | BOTTOM | 1 | 2.5V | 0.4mm | M95256 | 5.5V | 1.7V | SPI, Serial | 256Kb 32K x 8 | 20MHz | 20 ns | EEPROM | SPI | 8 | 5ms | 256 kb | 0.000001A | SPI | 4000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.271mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM24C16B-GTR | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | F-RAM™ | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | FM24C16 | 8 | 5V | 5V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 400μA | 1MHz | 550ns | FRAM | I2C | 8b | 8 | 16 kb | 0.00001A | 8b | 1.75mm | 4.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC515-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3 Weeks | Industrial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | 2.5V~5.5V | DUAL | NOT APPLICABLE | 1 | 4.5V | 2.54mm | NOT APPLICABLE | 24LC515 | 8 | R-PDIP-T8 | 不合格 | 5.5V | 3/5V | 2.5V | 512Kb 64K x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 64KX8 | 8 | 5ms | 0.000005A | 524288 bit | SERIAL | I2C | 100000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MDDR | 5.334mm | 9.27mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | MX25V8035FM1I | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2017 | MXSMIO™ | yes | 活跃 | 3 (168 Hours) | 8 | ALSO IT CAN BE CONFIGURED AS 8M X 1 BIT | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2.3V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 2MX4 | 4 | 100μs, 4ms | 8388608 bit | 3V | 2 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1011DV33-10ZSXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2002 | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10GHz | 30 | CY7C1011 | 3.3V | 3.6V | 3V | 2Mb 128K x 16 | 1 | 90mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 17b | 2 Mb | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA024H-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2016 | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | 24AA024H | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 2 kb | I2C | 5ms | 1.25mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LCS21A/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 2.5V~5.5V | DUAL | 1 | 3V | 2.54mm | 24LCS21A | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 10ms | 1 kb | 0.00003A | I2C | 1000000 Write/Erase Cycles | 10ms | 200 | HARDWARE | 1010000R | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | M95320-RMB6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 镍钯金 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 30 | M95320 | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 80 ns | EEPROM | SPI | 5ms | 32 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 10ms | 40 | HARDWARE/SOFTWARE | 530μm | 2mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1460AV33-167AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2006 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1460 | 100 | 3.3V | 3.6V | 3.135V | 36Mb 1M x 36 | 4 | 375mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.12A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T256F-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 哑光锡 | SEATED HT-CALCULATED | 1.6V~5.5V | DUAL | 225 | 1 | 1.27mm | 未说明 | BR24T256 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 256 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF032B-104V/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~105°C TA | Tube | 2016 | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) - annealed | 2.7V~3.6V | SST26VF032 | SPI, Serial | 32Mb 4M x 8 | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | 32 Mb | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2263KV18-550BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C2263 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 850mA | 550MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 19b | 36 Mb | 0.36A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1515KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1515 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 790mA | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 72 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256-15UM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 通孔 | 通孔 | 28-BCPGA | 28 | Non-Volatile | -55°C~125°C TC | Tray | 1997 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 自动写入 | 4.5V~5.5V | PERPENDICULAR | 225 | 1 | 5V | 2.54mm | 150GHz | 30 | AT28C256 | 5V | 5V | 256Kb 32K x 8 | 50mA | 150ns | EEPROM | Parallel | 32KX8 | 3-STATE | 8 | 10ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 10ms | YES | YES | NO | 64words | 4.4mm | 16.51mm | 13.97mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
 | SST39VF1601-70-4I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF1601 | 48 | 3.3V | 3.6V | 2.7V | 16Mb 1M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 10μs | 20b | 16 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 512 | 2K | BOTTOM | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | S29GL128S90TFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-S | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 3.6V | 3/3.3V | 2.7V | 128Mb 8M x 16 | 60mA | 90ns | FLASH | Parallel | 16b | 16MX8 | 60ns | 23b | 128 Mb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 128 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.05mm | 18.5mm | 14.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | 23A256-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Volatile | -40°C~85°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 1.7V~1.95V | DUAL | 260 | 1 | 1.8V | 0.65mm | 40 | 23A256 | 8 | 1.8V | SPI, Serial | 256Kb 32K x 8 | 1 | 10mA | 20MHz | 32 ns | SRAM | SPI | 3-STATE | 8 | 1b | 256 kb | 5e-7A | SEPARATE | Synchronous | 8b | 4.4mm | 无 | ROHS3 Compliant |