类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | 顺序突发长度 | 交错突发长度 | 访问模式 | 组织的记忆 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||
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.png) | AT24C256-10UI-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-VFBGA | 8 | 8-dBGA (3.81x2.34) | Non-Volatile | -40°C~85°C TA | Tray | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 1MHz | AT24C256 | 2-Wire, I2C, Serial | 5.5V | 2.7V | 256Kb 32K x 8 | 1MHz | 550ns | EEPROM | I2C | 10ms | 400kHz | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C31026B-12TCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP2 | Volatile | 0°C~70°C TA | Tray | 1996 | 活跃 | 3 (168 Hours) | 70°C | 0°C | 3V~3.6V | 3.3V | Parallel | 3.6V | 3V | 1Mb 64K x 16 | 1 | 12ns | SRAM | Parallel | 12ns | 16b | 1 Mb | 83MHz | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W988D6FBGX7E | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 54-TFBGA | YES | Volatile | -25°C~85°C TC | Tray | 2016 | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 54 | R-PBGA-B54 | 不合格 | 1.8V | 1.95V | 1.7V | 256Mb 16M x 16 | 1 | 70mA | SYNCHRONOUS | 133MHz | 5.4ns | DRAM | Parallel | 8MX32 | 3-STATE | 32 | 15ns | 15b | 256 Mb | 0.00001A | COMMON | 16 | 8192 | 1248FP | 1248 | 1.025mm | 9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST38VF6404B-70I/CD | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | SST38 | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST38VF6404 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 0.05mA | 70ns | FLASH | Parallel | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00004A | 2.7V | YES | YES | NO | 8127 | 4K32K | 16B | YES | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G32FVM-3AGTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | e3 | 活跃 | 1 (Unlimited) | 8 | 8542.32.00.51 | 1.7V~5.5V | DUAL | 未说明 | 1 | 0.65mm | 未说明 | BR24G32 | R-PDSO-G8 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 4KX8 | 8 | 5ms | 32 kb | I2C | 5ms | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST38VF6401BT-70I/CD | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | SST38 | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST38VF6401 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 0.05mA | 70ns | FLASH | Parallel | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00004A | 2.7V | YES | YES | NO | 128 | 32K | 16B | YES | BOTTOM | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST39LF200A-55-4C-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 2 (1 Year) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 3.3V | 0.8mm | 40 | SST39LF200A | 3.3V | 2Mb 128K x 16 | 30mA | 55ns | FLASH | Parallel | 16b | 128KX16 | 16 | 20μs | 17b | 2 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 64 | 2K | YES | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL032P0XNFV000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~105°C TA | Tray | 2015 | FL-P | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 104MHz | FLASH | SPI - Quad I/O | 4KX16 | 16 | 5μs, 3ms | 1b | 32 Mb | 0.00001A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 0.55mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29LV800CBTC-90G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | 0°C~70°C TA | Tray | 2012 | MX29LV | e3 | yes | 不用于新设计 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 8Mb 1M x 8 | ASYNCHRONOUS | FLASH | Parallel | 8MX16 | 16 | 90ns | 8 Mb | 0.000005A | 90 ns | 3V | 8 | YES | YES | YES | 12115 | 16K8K32K64K | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14MB064Q2B-SXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | Obsolete | 3 (168 Hours) | 8 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 20 | CY14MB064 | 3V | 3.6V | 3V | 2.7V | SPI, Serial | 64Kb 8K x 8 | 3mA | 40MHz | 9 ns | NVSRAM | SPI | 8 | 64 kb | 0.00012A | 8b | 1.727mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL512SDPBHV310 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~105°C TA | Tray | FL-S | 活跃 | 3 (168 Hours) | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 66MHz | 0.075mA | FLASH | SPI - Quad I/O | 64MX8 | 8 | 0.0003A | 512753664 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS512SDSNFB011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~105°C TA | Tube | Automotive, AEC-Q100, FS-S | 活跃 | 3 (168 Hours) | 8 | IT ALSO HAVE MEMORY WIDTH X 1 | 8542.32.00.51 | 1.7V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | R-PDSO-N8 | 2V | 1.7V | 512Mb 64M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | SERIAL | 1.8V | 2 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128P11TFI023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-P | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | 110mA | FLASH | Parallel | 8b | 128MX1 | 1 | 110ns | 128 Mb | 0.000005A | 110 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B104NA-ZSP25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | e3 | 活跃 | 3 (168 Hours) | 54 | 3A991.B.2.A | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 54 | 3V | 3.6V | 2.7V | 4Mb 256K x 16 | 70mA | 70mA | NVSRAM | Parallel | 16b | 256KX16 | 16 | 25ns | 4 Mb | 0.005A | 25 ns | 16b | 1.2mm | 22.415mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28C256-15UM883 | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Non-Volatile | AT28C256 | 通孔 | 28-BCPGA | 28-CPGA (16.51x13.97) | Atmel | Bulk | -55°C ~ 125°C (TC) | - | 4.5V ~ 5.5V | 256Kbit | 150 ns | EEPROM | Parallel | 10ms | 32K x 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W978H6KBVX2E | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 134-VFBGA | YES | 134 | Volatile | -25°C~85°C TC | Tray | 2016 | 活跃 | 3 (168 Hours) | 134 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1.14V~1.95V | BOTTOM | 1 | 1.2V | 0.65mm | 1.3V | 1.14V | 256Mb 16M x 16 | 1 | SYNCHRONOUS | 400MHz | DRAM | Parallel | 16MX16 | 16 | 15ns | 268435456 bit | 四库页面突发 | 1mm | 11.5mm | 10mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29CD016J0MFAM010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 80-LBGA | 80 | Non-Volatile | -40°C~125°C TA | Tray | 2015 | CD-J | e0 | 活跃 | 3 (168 Hours) | 80 | Tin/Lead (Sn/Pb) | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK | 8542.32.00.51 | 1.65V~2.75V | BOTTOM | 240 | 1 | 2.6V | 1mm | 30 | 不合格 | 2.6V | 2.75V | 2.5V | 16Mb 512K x 32 | ASYNCHRONOUS | 56MHz | 0.09mA | 54ns | FLASH | Parallel | 512KX32 | 32 | 60ns | 19b | 16 Mb | 0.00006A | 2.7V | YES | YES | YES | 1630 | 2K16K | YES | BOTTOM | YES | 1.4mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT28EW128ABA1LJS-0SIT | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 哑光锡 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | R-PDSO-G56 | 3.6V | 2.7V | 128Mb 16M x 8 8M x 16 | ASYNCHRONOUS | 95ns | FLASH | Parallel | 8MX16 | 16 | 60ns | 134217728 bit | 3V | 8 | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CYD18S18V18-200BBAXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 256-LBGA | 256 | Volatile | -40°C~85°C TA | Tray | 2011 | e1 | Obsolete | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 1.42V~1.58V 1.7V~1.9V | BOTTOM | 260 | 1 | 1.5V | 1mm | 30 | CYD18S18 | 256 | 1.8V | 1.58V | 18Mb 1M x 18 | 2 | 830mA | 200MHz | 3.3ns | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 20b | 18 Mb | 0.35A | COMMON | Synchronous | 18b | 1.4V | 1.7mm | 17mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY15E004Q-SXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tray | Automotive, AEC-Q100, F-RAM™ | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 4Kb 512 x 8 | SYNCHRONOUS | 16MHz | FRAM | SPI | 512X8 | 8 | 4096 bit | 1.727mm | 4.889mm | 3.8985mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C09579V-100AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 144-LQFP | 144 | Volatile | 0°C~70°C TA | Tray | 2000 | e3 | yes | Obsolete | 3 (168 Hours) | 144 | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.5mm | 30 | CY7C09579 | 144 | 3.3V | 3.465V | 3.135V | 1.152Mb 32K x 36 | 2 | 385mA | 100MHz | 5ns | SRAM | Parallel | 3-STATE | 36 | 30b | 1.1 Mb | 0.001A | COMMON | Synchronous | 36b | 3.14V | 1.6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB081E-MHN2B-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-UDFN Exposed Pad | 8 | 9.49709mg | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2012 | e4 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3.6V | 1.7V | SPI, Serial | 8Mb 256Bytes x 4096 pages | SYNCHRONOUS | 15mA | 85MHz | 7 ns | FLASH | SPI | 8b | 1 | 8μs, 4ms | 8 Mb | 0.000001A | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 0.6mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX25V4035FM1I | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | -40°C | YES | 85°C | Tube | 2017 | e3 | 活跃 | 8 | TIN | ALSO IT CAN BE CONFIGURED AS 4M X 1 BIT | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | INDUSTRIAL | 2.3V | 512kB | SYNCHRONOUS | 108MHz | 1MX4 | 4 | 4194304 bit | SERIAL | FLASH | 3V | 2 | 1.75mm | 4.9mm | 3.9mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43LR16800G-6BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 1.7V~1.95V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 1.8V | 1.95V | 1.7V | 128Mb 8M x 16 | 1 | SYNCHRONOUS | 166MHz | 5.5ns | DRAM | Parallel | 16b | 8MX16 | 16 | 15ns | 12b | 1 Gb | 1.1mm | 10mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L12873FZNI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | MXSMIO™ | 不用于新设计 | 8 | CAN BE ORGNISED AS 128 MBIT X 1 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 8 | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 32MX4 | 4 | 30μs, 1.5ms | 0.00002A | 134217728 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | SOFTWARE | 2 | 0.8mm | 6mm | 5mm | 符合RoHS标准 |