类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 颜色 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 内存大小 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 正向电流 | 访问时间 | 镜头风格 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 定时器/计数器的数量 | 写入周期时间 - 字符、页面 | 正向电压 | 发光强度 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 核心架构 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 可编程I/O数 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 输出启用 | 页面尺寸 | 刷新周期 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS34ML04G084-TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.5mm | 未说明 | R-PDSO-G48 | 3.6V | 2.7V | 4Gb 512M x 8 | SYNCHRONOUS | FLASH | Parallel | 512MX8 | 8 | 25ns | 4294967296 bit | 3.3V | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C64M16D2-25BCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 84-TFBGA | YES | 84 | Volatile | 0°C~85°C TC | Tray | 2013 | Obsolete | 3 (168 Hours) | 84 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 0.8mm | 1.8V | 1.9V | 1.7V | 1 | 1Gb 64M x 16 | 400MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 16 | 15ns | 13b | 1 Gb | 1.2mm | 12.5mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 5962-8861009ZA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Volatile | 活跃 | 5962-8861009 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | 0.221986 oz | - 55 C | 3 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | 2000 | SRAM | 通孔 | 通孔 | 68-BPGA | 68 | 68-PGA (29.46x29.46) | Renesas Electronics America Inc | Tray | -55°C ~ 125°C (TA) | Tray | - | Asynchronous | 125 °C | -55 °C | Memory & Data Storage | 4.5V ~ 5.5V | Parallel | 5 V | 5 V | 2 | 310 mA | 32Kbit | 70 ns | SRAM | Parallel | 2 k x 16 | 70ns | 22 b | 32 kb | Asynchronous | 16 b | SRAM | 2K x 16 | 3.68 mm | 29.46 mm | 29.46 mm | 3.68 mm | 无 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB041E-SSHN-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 通孔 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tube | 2012 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Yellow | IT ALSO OPERATES AT FREQUENCY 70 MHZ AT 1.65 TO 3.6 V SUPPLY VOLTAGE | 1.65V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 不合格 | 1.8V | 3.6V | 2.3V | SPI, Serial | 15mA | 4Mb 264Bytes x 2048 pages | 15mA | 85MHz | 20mA | 7 ns | Diffused | FLASH | SPI | 8b | 4MX1 | 8μs, 3ms | 2V | 600 mcd | 19b | 4 Mb | 0.000001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 264B | 8.6mm | 5.05mm | 3.99mm | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1520V18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | not_compliant | 未说明 | CY7C1520 | 165 | 不合格 | 1.8V | 1 | 72Mb 2M x 36 | 250MHz | 0.8mA | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25V02-DGTR | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | F-RAM™ | Obsolete | 1 (Unlimited) | 8 | EAR99 | Pure Tin (Sn) | 2V~3.6V | DUAL | 260 | 1 | 3.3V | 0.95mm | FM25V02 | 3.6V | 2.5/3.3V | 2V | SPI, Serial | 2.5mA | 256Kb 32K x 8 | 40MHz | 9 ns | FRAM | SPI | 8b | 8 | 256 kb | 0.00015A | 8b | 4.5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C04-BN6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | M24C04 | 8 | 5V | 5V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDMR | 5.33mm | 9.27mm | 7.62mm | 无 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS512SDSBHM213 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 24-TBGA | YES | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, FS-S | 活跃 | 3 (168 Hours) | 24 | IT IS ALSO CONFIGURED AS 512M X 1 | 8542.32.00.51 | 1.7V~2V | BOTTOM | 未说明 | 1 | 1.8V | 1mm | 未说明 | R-PBGA-B24 | 2V | 1.7V | 512Mb 64M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | AEC-Q100; TS 16949 | SERIAL | 1.8V | 2 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V256SA10Y | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28-SOJ | Volatile | 0°C~70°C TA | Tube | Obsolete | 1 (Unlimited) | 3V~3.6V | IDT71V256 | 256Kb 32K x 8 | 10ns | SRAM | Parallel | 10ns | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PC28F256M29EWHD | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 64-LBGA | 64 | 64-FBGA (11x13) | Non-Volatile | -40°C~85°C TA | Tray | 1995 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | PC28F256M29 | 2.7V | Parallel | 3.6V | 2.7V | 31mA | 256Mb 32M x 8 16M x 16 | 100ns | FLASH | Parallel | 100ns | 256 Mb | Asynchronous | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF800A-90-4C-M2QE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | 48-WFBGA (6x4) | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | Obsolete | 3 (168 Hours) | 70°C | 0°C | 1.65V~1.95V | SST39WF800A | 1.8V | Parallel | 1.95V | 1.65V | 15mA | 8Mb 512K x 16 | 90ns | FLASH | Parallel | 16b | 40μs | 19b | 8 Mb | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W971GG8JB-25 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 60-TFBGA | YES | 60 | Volatile | 0°C~85°C TC | Tube | 2011 | Obsolete | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 60 | 不合格 | 1.8V | 1.9V | 1.7V | 1 | 1Gb 128M x 8 | SYNCHRONOUS | 200MHz | 400ps | DRAM | Parallel | 8b | 16MX8 | 3-STATE | 8 | 15ns | 17b | 1 Gb | 800MHz | COMMON | 8192 | 48 | 48 | 1.2mm | 12.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42RM16160D-7BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | -40°C~85°C TA | Tray | e1 | yes | Discontinued | 3 (168 Hours) | 54 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 2.3V~2.7V | BOTTOM | 260 | 1 | 2.5V | 0.8mm | 10 | 54 | 2.5V | 2.7V | 2.3V | 1 | 110mA | 256Mb 16M x 16 | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15b | 256 Mb | 0.001A | 143MHz | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 13mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C31025B-12JCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 32-BSOJ (0.400, 10.16mm Width) | 32 | 32-SOJ | Volatile | 0°C~70°C TA | Tube | 2003 | 活跃 | 3 (168 Hours) | 70°C | 0°C | 3V~3.6V | 3.3V | Parallel | 3.6V | 3V | 1 | 1Mb 128K x 8 | 12ns | SRAM | Parallel | 12ns | 17b | 1 Mb | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M48Z128Y-85PM1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 32-DIP Module (0.600, 15.24mm) | 32 | Non-Volatile | 0°C~70°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 32 | EAR99 | Matte Tin (Sn) | 10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 2.54mm | 85GHz | 未说明 | M48Z128 | 32 | 不合格 | 5V | 5V | 1 | 105mA | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 128KX8 | 3-STATE | 8 | 85ns | 1 Mb | 0.004A | 85 ns | 8b | YES | 9.52mm | 42.8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62148G-45ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tube | 2012 | MoBL® | 活跃 | 3 (168 Hours) | 32 | 3A991.B.2.A | 8542.32.00.41 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G32 | 5.5V | 4.5V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 8 | 45ns | 4194304 bit | 45 ns | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA256T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA256 | 8 | 不合格 | 5.5V | 2/5V | SPI, Serial | 6mA | 256Kb 32K x 8 | SYNCHRONOUS | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 256 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24128-DRMN8TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 6 months ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 1.27mm | 未说明 | M24128 | 不合格 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8 | 4ms | 0.000001A | 131072 bit | I2C | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16100H-6TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 3V~3.6V | 16Mb 1M x 16 | 166MHz | 5.5ns | DRAM | Parallel | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C76T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 有 | 96B | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 40 | 93C76 | 8 | 5V | 5V | Serial | 3mA | 8Kb 1K x 8 512 x 16 | 2MHz | EEPROM | SPI | 8b | 16 | 1 | 10ms | 8 kb | PIC | 13 | MICROWIRE | 200 | HARDWARE/SOFTWARE | 8 | 4.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS46LR32160B-6BLA2 | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | 表面贴装 | 90-TFBGA | YES | 90 | Volatile | -40°C~105°C TA | Tray | e1 | yes | 活跃 | 3 (168 Hours) | 90 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.28 | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 90 | 1.8V | 1.95V | 1.7V | 1 | 512Mb 16M x 32 | 166MHz | 5.5ns | DRAM | Parallel | 32b | 16MX32 | 3-STATE | 32 | 12ns | 15b | 512 Mb | 0.00001A | COMMON | 8192 | 24816 | 24816 | 1.2mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FS512SDSBHA213 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 24-TBGA | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, FS-S | 活跃 | 3 (168 Hours) | 24 | IT IS ALSO CONFIGURED AS 512M X 1 | 8542.32.00.51 | 1.7V~2V | BOTTOM | 未说明 | 1 | 1.8V | 1mm | 未说明 | R-PBGA-B24 | 2V | 1.7V | 512Mb 64M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | AEC-Q100; TS 16949 | SERIAL | 1.8V | 2 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1010DV33-10VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | 36 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e4 | yes | 活跃 | 3 (168 Hours) | 36 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 30 | CY7C1010 | 3.3V | 3.6V | 3V | 1 | 90mA | 2Mb 256K x 8 | SRAM | Parallel | 256KX8 | 3-STATE | 8 | 10ns | 18b | 2 Mb | COMMON | Asynchronous | 8b | 2V | 2.75mm | 23.495mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064S70TFA010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-S | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | R-PDSO-G56 | 3.6V | 2.7V | 64Mb 4M x 16 | ASYNCHRONOUS | 70ns | FLASH | Parallel | 4MX16 | 16 | 60ns | 67108864 bit | AEC-Q100 | 3V | 8 | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY15B064J-SXET | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, F-RAM™ | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.71 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-N8 | 3.6V | 3V | 64Kb 8K x 8 | SYNCHRONOUS | 1MHz | FRAM | I2C | 8KX8 | 8 | 65536 bit | 1.727mm | 4.889mm | 3.8985mm | ROHS3 Compliant |