类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 阀门数量 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 宏细胞数 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | IS43DR16640B-25DBLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 84-TFBGA | YES | 84 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 84 | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 不合格 | 1.8V | 1Gb 64M x 16 | 110mA | 400MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 0.015A | 1073741824 bit | COMMON | 8192 | 48 | 48 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DSM2190F4V-15T6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 52-QFP | YES | 52 | Non-Volatile | -40°C~85°C TA | Tray | e4 | Obsolete | 1 (Unlimited) | 52 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.71 | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 150GHz | 未说明 | DSM2190 | 52 | 不合格 | 5.25V | 3.6V | 3V | 2Mb 256K x 8 | ASYNCHRONOUS | 150ns | FLASH | Parallel | 256KX8 | 8 | 3000 | 16 | 2.35mm | 10mm | 10mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064N90TFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-N | e3 | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | FLASH | Parallel | 4MX16 | 16 | 90ns | 64 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G86FVM-3AGTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 0.635mm | BR93G86 | R-PDSO-G8 | 不合格 | 1.8/5V | Serial | 16Kb 1K x 16 | 3MHz | 200 ns | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 0.000002A | 3-WIRE | 1000000 Write/Erase Cycles | 40 | SOFTWARE | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | AT25160A-10TQ-2.7 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB321E-MWHF-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 3.6V | 2.3V | SPI, Serial | 32Mb 528Bytes x 8192 pages | 22mA | 22mA | 85MHz | 7 ns | FLASH | SPI | 8b | 32MX1 | 1 | 8μs, 4ms | 22b | 32 Mb | Synchronous | 8b | 3V | 528B | 1mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1371D-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | 657.000198mg | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | SMD/SMT | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1371 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 210mA | 210mA | 133MHz | 6.5ns | SRAM | Parallel | 512KX36 | 3-STATE | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 14mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V016SA15PH | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 3V~3.6V | IDT71V016 | 1Mb 64K x 16 | 15ns | SRAM | Parallel | 15ns | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LV12824-10BL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 119-BGA | YES | 119 | Volatile | 0°C~70°C TA | Tray | e1 | yes | 活跃 | 2 (1 Year) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 3.135V~3.6V | BOTTOM | 260 | 1 | 3.3V | 40 | 119 | 3.3V | 3.63V | 2.97V | 3Mb 128K x 24 | 1 | 180mA | SRAM | Parallel | 3-STATE | 10ns | 17b | 3 Mb | COMMON | Asynchronous | 24b | 3V | 22mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV51216BLL-55BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 2.5V~3.6V | 3.3V | 8Mb 512K x 16 | 1 | 5mA | SRAM | Parallel | 55ns | 19b | 8 Mb | Asynchronous | 16b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61NLP51236B-200TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 100-LQFP | YES | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 100 | 3.135V~3.465V | QUAD | 未说明 | 1 | 3.3V | 0.65mm | 未说明 | R-PQFP-G100 | 3.465V | 3.135V | 18Mb 512K x 36 | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29AS016J70TFI030 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | AS-J | Obsolete | 3 (168 Hours) | 48 | EAR99 | TOP BOOT BLOCK | 8542.32.00.51 | 1.65V~1.95V | DUAL | 1 | 1.8V | 0.5mm | 1.8V | 1.95V | 1.65V | 16Mb 2M x 8 1M x 16 | FLASH | Parallel | 8b | 1MX16 | 16 | 70ns | 20b | 16 Mb | 70 ns | 8 | TOP | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT28C64BW-12T | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2007 | e3 | Obsolete | 1 (Unlimited) | 28 | EAR99 | Tin (Sn) | 8542.32.00.51 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | CAT28C64B | 28 | 不合格 | 5V | 5V | 64Kb 8K x 8 | 30mA | ASYNCHRONOUS | 120ns | EEPROM | Parallel | 8KX8 | 8 | 5ms | 64 kb | 0.0001A | 5V | 100000 Write/Erase Cycles | 5ms | YES | YES | NO | 32words | 2.65mm | 17.9mm | 7.5mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25H040F-2LBH2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 2.5V | 4Kb 512 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 512X8 | 8 | 4ms | 4096 bit | SERIAL | SPI | 4ms | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR24A01AF-WME2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO AVAILABLE 2.5-5.5V OPERATES WITH 0.1MHZ, SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 1Kb 128 x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 0.000002A | 1024 bit | SERIAL | I2C | 100000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39LF801C-55-4C-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-WFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.5mm | 40 | SST39LF801 | 48 | 3.3V | 3.6V | 3V | 8Mb 512K x 16 | 18mA | 55ns | FLASH | Parallel | 16b | 512KX16 | 16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | BOTTOM | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | CYD36S18V18-167BGXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 484-FBGA | 484 | Volatile | -40°C~85°C TA | Tray | 2011 | e1 | yes | Obsolete | 3 (168 Hours) | 484 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 1.42V~1.58V 1.7V~1.9V | BOTTOM | 260 | 1 | 1.5V | 1mm | 30 | CYD36S18 | 484 | 1.8V | 1.58V | 36Mb 2M x 18 | 2 | 1.41A | 167MHz | 4ns | SRAM | Parallel | 3-STATE | 18 | 21b | 36 Mb | 0.7A | COMMON | Synchronous | 18b | 1.4V | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23LC1024T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 23LC1024 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 1Mb 128K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 128KX8 | 3-STATE | 8 | 0.000012A | 1048576 bit | 32 ns | SERIAL | COMMON/SEPARATE | 2.5V | NO | NO | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C256A-15JCNTR | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | YES | 28 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 1997 | yes | 活跃 | 3 (168 Hours) | 28 | 4.5V~5.5V | DUAL | 1 | 5V | 28 | 5V | 256Kb 32K x 8 | 1 | SRAM | Parallel | 32KX8 | 8 | 15ns | 15b | 256 kb | 3.759mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1441AV33-133AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 2004 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | CY7C1441 | 100 | 3.3V | 3.6V | 3.135V | 36Mb 1M x 36 | 4 | 310mA | 133MHz | 6.5ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62126EV30LL-45ZSXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tray | 1998 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62126 | 44 | 3V | 3.6V | 2.2V | 1Mb 64K x 16 | 1 | 16mA | 16mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 16b | 1 Mb | 0.00003A | 45 ns | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF402C-70-4C-EKE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) - annealed | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST39VF402C | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 18mA | 70ns | FLASH | Parallel | 256KX16 | 16 | 10μs | 1b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | IS43TR81280B-125JBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 78-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 78 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | 未说明 | 1 | 1.5V | 0.8mm | 未说明 | R-PBGA-B78 | 1.575V | 1.425V | 1Gb 128M x 8 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX8 | 8 | 15ns | 1073741824 bit | 1.2mm | 10.5mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25WF080BT-40I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST25 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | SST25WF080B | 1.8V | 1.95V | 1.65V | SPI, Serial | 8Mb 1M x 8 | 10mA | 40MHz | 11 ns | FLASH | SPI | 1 | 1ms | 24b | 8 Mb | Synchronous | 8b | 256B | 1.75mm | 4.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA66XT/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 1.8V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA66 | 8 | 5.5V | 2/5V | Serial | 4Kb 512 x 8 256 x 16 | 3mA | 2MHz | EEPROM | SPI | 256X16 | 3-STATE | 16 | 10ms | 4 kb | 0.00003A | TS 16949 | MICROWIRE | 10000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 |