类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 反向引脚排列 | 自我刷新 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||||||||||||||||||||||||||||||||||||
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 | IS41LV16100D-50TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 50-TSOP (0.400, 10.16mm Width), 44 Leads | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 44 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | R-PDSO-G44 | 3.6V | 3V | 16Mb 1M x 16 | 1 | ASYNCHRONOUS | 25ns | DRAM | Parallel | 1MX16 | 16 | 16777216 bit | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16320B-6TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 54 | 3.3V | 3.6V | 3V | 512Mb 32M x 16 | 1 | 180mA | 166MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 15b | 512 Mb | 0.004A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 5962-8855206UA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Volatile | 5962-8855206 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | 1.203871 oz | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | DIP, DIP28,.3 | IN-LINE | 32000 | CERAMIC, GLASS-SEALED | DIP28,.3 | -55 °C | 25 ns | 125 °C | 5962-8855206UA | 32768 words | 5 V | DIP | RECTANGULAR | 活跃 | TELEDYNE E2V (UK) LTD | 1.16 | DIP | Military grade | SRAM | 通孔 | 28-CDIP (0.300", 7.62mm) | NO | 28-CDIP | 28 | Renesas Electronics America Inc | Tube | -55°C ~ 125°C (TA) | Tube | - | e0 | 3A001.A.2.C | Asynchronous | 锡铅 | 8542.32.00.41 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 28 | R-GDIP-T28 | Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 256Kbit | ASYNCHRONOUS | 155 mA | 25 ns | SRAM | Parallel | 32 k x 8 | 3-STATE | 8 | 25ns | 0.0008 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | 标准SRAM | 2 V | SRAM | 32K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25SF041-MAHD-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TC | Cut Tape (CT) | 2014 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 未说明 | R-PDSO-N8 | 3.3V | 3.6V | 2.5V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 104MHz | 8 ns | FLASH | SPI | 4MX1 | 1 | 5μs, 2.5ms | 32 Mb | 2.7V | SPI | 256B | 0.6mm | 3mm | 2mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC76AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC76A | 8 | 不合格 | 5V | Serial | 8Kb 1K x 8 | 3mA | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42RM32400H-75BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 90-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 90 | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | 2.3V~3V | BOTTOM | 未说明 | 1 | 2.5V | 0.8mm | 未说明 | R-PBGA-B90 | 3V | 2.3V | 128Mb 4M x 32 | 1 | SYNCHRONOUS | 133MHz | 6ns | DRAM | Parallel | 4MX32 | 32 | 134217728 bit | 1.2mm | 13mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16100H-7BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 60-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 60 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.65mm | R-PBGA-B60 | 不合格 | 3.6V | 3.3V | 3V | 16Mb 1M x 16 | 1 | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 1MX16 | 3-STATE | 16 | 0.0035A | 16777216 bit | COMMON | 2048 | 1248FP | 1248 | 1.2mm | 10.1mm | 6.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021B-15ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2006 | e4 | yes | Obsolete | 3 (168 Hours) | 44 | 3A991.B.2.B | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | unknown | 15GHz | 20 | CY7C1021 | 44 | R-PDSO-G44 | 不合格 | 5.5V | 5V | 4.5V | 1Mb 64K x 16 | 0.13mA | SRAM | Parallel | 64KX16 | 3-STATE | 16 | 15ns | 0.01A | 1048576 bit | 15 ns | COMMON | 4.5V | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT21CS01-UUM0B-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 4-XFBGA, WLCSP | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 4 | 1.7V~3.6V | BOTTOM | 未说明 | 1 | 1.8V | 0.4mm | 未说明 | AT21CS01 | X-PBGA-B4 | 3.6V | 1.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 128X8 | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 0.335mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L3273EM2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2017 | MXSMIO™ | e3 | 不用于新设计 | 3 (168 Hours) | 8 | MATTE TIN (800) | CAN BE ORGNISED AS 32 MBIT X 1 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 8 | R-PDSO-G8 | 3.6V | 2.7V | 32Mb 8M x 4 | SYNCHRONOUS | 104MHz | FLASH | SPI | 8MX4 | 4 | 50μs, 3ms | 33554432 bit | SERIAL | 2.7V | 2 | 2.16mm | 5.28mm | 5.23mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF6402B-70-4C-EKE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 0.5mm | SST39VF6402B | 3.3V | 64Mb 4M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 2K | 2K | TOP | YES | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV93C66YE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Automotive grade | ACTIVE (Last Updated: 1 week ago) | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 5V | 0.65mm | 8 | 5.5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 256X16 | 16 | 4 kb | MICROWIRE | 8 | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV24C32C4CTR | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 4-XFBGA, WLCSP | YES | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | yes | 活跃 | 1 (Unlimited) | 4 | 2.5V~5.5V | BOTTOM | 未说明 | 1 | 3.3V | 0.4mm | 未说明 | S-PBGA-B4 | 5.5V | 2.5V | 32Kb 4K x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 4KX8 | 8 | 5ms | 32768 bit | SERIAL | I2C | 5ms | 0.35mm | 0.76mm | 0.76mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT28LV64G25 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | 0°C~70°C TA | Tray | 2007 | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | TIN | 3V~3.6V | QUAD | 1 | 3.3V | 1.27mm | CAT28LV64 | 32 | 不合格 | 3.3V | 3.6V | 3V | 64Kb 8K x 8 | 8mA | ASYNCHRONOUS | 250ns | EEPROM | Parallel | 8KX8 | 8 | 5ms | 64 kb | 0.0001A | 3V | 100000 Write/Erase Cycles | 5ms | YES | YES | NO | 3.55mm | 13.97mm | 11.43mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV3216BLL-12TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 44 | 3.3V | 3.63V | 2.97V | 512Kb 32K x 16 | 1 | 45mA | SRAM | Parallel | 3-STATE | 16 | 12ns | 15b | 512 kb | 0.00005A | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G66FVJ-3AGTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | ALSO AVAILABLE 1.7V-2.5V OPERATES WITH 1MHZ, 2.5V-4.5V OPERATES WITH 2MHZ | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | S-PDSO-G8 | 5.5V | 4.5V | 4Kb 256 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 256X16 | 16 | 5ms | 4096 bit | SERIAL | 3-WIRE | 5ms | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STK14C88-5L45M | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Military grade | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -55°C~125°C TA | Tube | 2005 | no | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 70mA | NVSRAM | Parallel | 8b | 8 | 45ns | 256 kb | 0.003A | MIL-STD-883 | 45 ns | 8b | 2.286mm | 13.97mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25Q40CTIG | GigaDevice Semiconductor (HK) Limited | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tube | 2015 | 活跃 | 3 (168 Hours) | 2.7V~3.6V | 4Mb 512K x 8 | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62147EV18LL-55BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.65V~2.25V | BOTTOM | 260 | 1 | 1.8V | 0.75mm | 30 | CY62147 | 1.8V | 2.25V | 4Mb 256K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 18b | 4 Mb | 0.000005A | 55 ns | COMMON | Asynchronous | 16b | 1V | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24FC1026-I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24FC1026 | 8 | 不合格 | 5.5V | 2/5V | I2C, Serial | 1Mb 128K x 8 | 5mA | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 1 Mb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDMR | NO | 2.03mm | 5.26mm | 5.25mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T02FVT-WGE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2013 | yes | Discontinued | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 0.65mm | 未说明 | 8 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 0.000002A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT46V16M16FG-75IT:F | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, THIN PROFILE | 16000000 | PLASTIC/EPOXY | BGA60,9X12,40/32 | -40 °C | 30 | 0.75 ns | 85 °C | 无 | MT46V16M16FG-75IT:F | 133 MHz | 16777216 words | 2.5 V | TBGA | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.68 | BGA | YES | 60 | (8 X 14) MM, PLASTIC, FBGA-60 | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | 不合格 | 2.7 V | 2.5 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.4 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | 四库页面突发 | YES | 14 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S16160B-7TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 54 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 54 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 16M x 16 | 1 | 130mA | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15b | 256 Mb | 0.001A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 22.22mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1019CV33-12VC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-BSOJ (0.400, 10.16mm Width) | YES | 32 | Volatile | 0°C~70°C TA | Tube | 2000 | e0 | Obsolete | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 3V~3.6V | DUAL | 225 | 1 | 3.3V | 1.27mm | not_compliant | 12GHz | 30 | CY7C1019 | 32 | 不合格 | 3.63V | 3.3V | 2.97V | 1Mb 128K x 8 | SRAM | Parallel | 128KX8 | 3-STATE | 8 | 12ns | 0.005A | 1048576 bit | 12 ns | COMMON | 3V | 3.7592mm | 20.955mm | 10.16mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST38VF6402B-70I/CD | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | SST38 | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST38VF6402 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 30mA | 70ns | FLASH | Parallel | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00004A | Asynchronous | 16b | 2.7V | YES | YES | NO | 128 | 32K | 16B | YES | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant |