类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | CAT24C164WI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | CAT24C164 | 8 | 5V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 1mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 100 | HARDWARE | 1DDDMMMR | 1.5mm | 5mm | 4mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93G76NUX-3ATTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 1.7V~5.5V | BR93G76 | Serial | 8Kb 512 x 16 | 3MHz | 200 ns | EEPROM | SPI | 5ms | 8 kb | 3-WIRE | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S16100E-7TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | 50 | Volatile | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 50 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 50 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 130mA | 143MHz | 5.5ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | 12b | 16 Mb | 0.002A | COMMON | 2048 | 1248FP | 1248 | 1.2mm | 20.95mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX29LV320ETXEI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-LFBGA, CSPBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2003 | MX29LV | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.8mm | 未说明 | 48 | R-PBGA-B48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 | ASYNCHRONOUS | FLASH | Parallel | 2MX16 | 16 | 70ns | 32 Mb | 0.000015A | 70 ns | 3V | 8 | YES | YES | YES | 863 | 8K64K | YES | TOP | YES | 1.3mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF402C-70-4C-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF402C | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 18mA | 70ns | FLASH | Parallel | 256KX16 | 16 | 10μs | 1b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | TOP | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | 93C46AT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C46A | 8 | 5V | 5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25L080FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | BR25L080 | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 3mA | 5MHz | 70 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1.65mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V016SA12PHGI | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | -40°C~85°C TA | Tube | 活跃 | 3 (168 Hours) | 3V~3.6V | IDT71V016 | 1Mb 64K x 16 | 12ns | SRAM | Parallel | 12ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W947D6HBHX5I | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | -40°C~85°C TA | Tray | 2011 | 活跃 | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 60 | 1.8V | 1.95V | 1.7V | 128Mb 8M x 16 | 1 | 55mA | 200MHz | 5ns | DRAM | Parallel | 8MX16 | 3-STATE | 16 | 15ns | 14b | 128 Mb | 0.00001A | COMMON | 4096 | 24816 | 24816 | 1.025mm | 9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71024S15Y | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-BSOJ (0.400, 10.16mm Width) | 32-SOJ | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 4.5V~5.5V | IDT71024 | 1Mb 128K x 8 | 15ns | SRAM | Parallel | 15ns | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS66WVC4M16ALL-7010BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-VFBGA | 54 | Volatile | -40°C~85°C TA | Tray | e1 | yes | Discontinued | 3 (168 Hours) | 54 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.75mm | 40 | 54 | 1.95V | 1.8V | 1.7V | 64Mb 4M x 16 | PSRAM | Parallel | 4MX16 | 3-STATE | 16 | 70ns | 0.00001A | 67108864 bit | 70 ns | COMMON | 1mm | 8mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C136A-55JXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | -40°C~85°C TA | Tray | 2003 | Obsolete | 3 (168 Hours) | 52 | EAR99 | 4.5V~5.5V | QUAD | 260 | 1 | 5V | unknown | 未说明 | CY7C136 | 52 | 不合格 | 5V | 5V | 16Kb 2K x 8 | 2 | 110mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 22b | 16 kb | 0.015A | 18MHz | 55 ns | COMMON | Asynchronous | 8b | 5.08mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25XE021A-SSHN-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Cut Tape (CT) | 2015 | yes | 活跃 | 1 (Unlimited) | 8 | 1.65V~3.6V | DUAL | 1 | 1.8V | 1.27mm | 3.6V | 1.65V | SPI, Serial | 2Mb 256K x 8 | SYNCHRONOUS | 70MHz | 7.5 ns | FLASH | SPI | 2MX1 | 1 | 8μs, 5ms | 16 Mb | 256B | 1.75mm | 4.925mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C010-15TU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | 32 | Non-Volatile | -40°C~85°C TC | Tray | 1997 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | 哑光锡 | 4.5V~5.5V | DUAL | 1 | 5V | 0.5mm | 150GHz | AT28C010 | 5V | 5V | Parallel, SPI | 1Mb 128K x 8 | 40mA | 150ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | 0.0002A | 5V | 10000 Write/Erase Cycles | 10ms | YES | YES | 128words | 1.2mm | 18.4mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V424L12PHG | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Commercial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | 0°C~70°C TA | Tube | 活跃 | 3 (168 Hours) | 3V~3.6V | IDT71V424 | 4Mb 512K x 8 | 12ns | SRAM | Parallel | 12ns | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1313BV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1313 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 500mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 18b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FM21L16-60-TG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2006 | F-RAM™ | e4 | Obsolete | 3 (168 Hours) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.71 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 30 | FM21L16 | 44 | 3.3V | 3.6V | 2.7V | 2Mb 128K x 16 | 12mA | FRAM | Parallel | 16b | 128KX16 | 110ns | 2 Mb | 0.00027A | 110 ns | 16b | 1.2mm | 18.41mm | 10.16mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25R6435FM2IH0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | MXSMIO™ | yes | 活跃 | 3 (168 Hours) | 8 | ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT | 1.65V~3.6V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 1.65V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 16MX4 | 4 | 100μs, 4ms | 67108864 bit | 1.8V | 2 | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S70GL02GS12FHIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-S | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.71 | 1.65V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | 不合格 | 3.6V | 3/3.3V | 2.7V | 2Gb 128M x 16 | ASYNCHRONOUS | 0.16mA | 120ns | FLASH | Parallel | 128MX16 | 16 | 0.0002A | 3V | 8 | YES | YES | YES | 2K | 128K | 16/32words | YES | BOTTOM/TOP | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29JL032J60TFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | JL-J | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 3.3V | 3.6V | 2.7V | Parallel, Serial | 32Mb 4M x 8 2M x 16 | 16mA | FLASH | Parallel | 8b | 2MX16 | 16 | 60ns | 32 Mb | 0.000005A | 60 ns | Asynchronous | 3V | 8 | YES | YES | 863 | 8K64K | YES | TOP | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY14V101QS-BK108XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | 活跃 | 3 (168 Hours) | 24 | EAR99 | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 2.7V | SPI, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 108MHz | NVSRAM | SPI | 128KX8 | 8 | 1048576 bit | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1355C-100AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2003 | NoBL™ | e3 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | unknown | 20 | CY7C1355 | 100 | R-PQFP-G100 | 不合格 | 3.6V | 2.5/3.33.3V | 3.135V | 9Mb 256K x 36 | 100MHz | 7.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | COMMON | 3.14V | 1.6mm | 20mm | 14mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S32800D-7BL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 90-TFBGA | 90 | Volatile | 0°C~70°C TA | Tray | e1 | yes | Obsolete | 3 (168 Hours) | 90 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 40 | 90 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 150mA | 143MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | 32 | 13b | 256 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1061GE30-10BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 48-VFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | BOTTOM | 1 | 3V | 0.75mm | CY7C1061 | 3.6V | 2.2V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | 1mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS63WV1024BLL-12JLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 32-BSOJ (0.300, 7.62mm Width) | 32 | 32-SOJ | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 85°C | -40°C | 3V~3.6V | 3.3V | Parallel | 3.63V | 2.97V | 1Mb 128K x 8 | 1 | 45mA | 12ns | SRAM | Parallel | 12ns | 17b | 1 Mb | Asynchronous | 8b | 无 | ROHS3 Compliant |