类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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![]() | AT45DB642D-TU | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 | 1997 | 66MHz | 8MB | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT64LC40WI-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | 8 | 不合格 | 6V | 2.5V | SPI, Serial | 4Kb 256 x 16 | 1mA | SYNCHRONOUS | 1MHz | 500 ns | EEPROM | SPI | 无卤素 | 8 | 5ms | 4 kb | SPI | 1.75mm | 4.9mm | 3.9mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25PF040CT-40I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | SST25 | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.3V~3.6V | DUAL | 1 | 3.3V | 1.27mm | SST25PF040C | R-PDSO-N8 | 3.6V | 2.3V | 4Mb 512K x 8 | SYNCHRONOUS | 40MHz | 0.015mA | FLASH | SPI | 4MX1 | 1 | 5ms | 0.00001A | 4194304 bit | SERIAL | 3.3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NO | 0.8mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA56T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 1.8V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA56 | 8 | 5.5V | 2/5V | 2-Wire, Serial | 2Kb 256 x 8 128 x 16 | 3mA | 2MHz | 6 ms | EEPROM | SPI | 3-STATE | 16 | 10ms | 2 kb | 0.00003A | MICROWIRE | 10000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39LF020-45-4C-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | e1 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 3V~3.6V | BOTTOM | 260 | 3.3V | 0.8mm | 40 | SST39LF020 | 3.3V | 2Mb 256K x 8 | 20mA | 45ns | FLASH | Parallel | 8b | 256KX8 | 8 | 20μs | 18b | 2 Mb | 0.000015A | Asynchronous | 8b | YES | YES | YES | 64 | 4K | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS6C1016-55ZIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | 2007 | yes | 活跃 | 3 (168 Hours) | 44 | EAR99 | 2.7V~5.5V | DUAL | 260 | 1 | 3V | 0.8mm | 40 | 44 | 不合格 | 3V | 5.5V | 3/5V | 2.7V | 1Mb 64K x 16 | 1 | SRAM | Parallel | 3-STATE | 16 | 55ns | 16b | 1 Mb | 0.00002A | 55 ns | COMMON | 2V | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL256S10TFV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~105°C TA | Tray | 2015 | GL-S | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 不合格 | 3V | 3.6V | 2.7V | 256Mb 16M x 16 | 60mA | 100ns | FLASH | Parallel | 16MX16 | 16 | 60ns | 24b | 256 Mb | 0.0002A | Asynchronous | 16b | 3V | YES | YES | YES | 256 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1021BN-12ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2006 | e4 | yes | Obsolete | 3 (168 Hours) | 44 | 3A991.B.2.B | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | unknown | 12GHz | 20 | CY7C1021 | 44 | R-PDSO-G44 | 不合格 | 5.5V | 5V | 4.5V | 1Mb 64K x 16 | 0.13mA | SRAM | Parallel | 64KX16 | 3-STATE | 16 | 12ns | 0.01A | 1048576 bit | 12 ns | COMMON | 4.5V | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1049CV33-12ZSXAT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Automotive grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e4 | yes | Obsolete | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 20 | CY7C1049 | 3.3V | 3.6V | 3V | 4Mb 512K x 8 | 1 | 95mA | SRAM | Parallel | 3-STATE | 8 | 12ns | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93G86FVM-3GTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | yes | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 1.7V WITH 1MHZ AMD 2.5V AT 2MHZ | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | Serial | 16Kb 2K x 8 1K x 16 | SYNCHRONOUS | 3MHz | 200 ns | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 3-WIRE | 5ms | 8 | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC66AT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93LC66A | 8 | 5.5V | 2.5V | Serial | 4Kb 512 x 8 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 4 kb | MICROWIRE | 6ms | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT25010HU4I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | Industrial grade | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | CAT25010 | 8 | 不合格 | 5.5V | 2/5V | SPI, Serial | 1Kb 128 x 8 | 2mA | SYNCHRONOUS | 10MHz | 75 ns | EEPROM | SPI | 无卤素 | 5ms | 1 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 500μm | 3.05mm | 2.05mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX29F400CTTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2008 | MX29F | e3 | yes | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 48 | 5V | 5V | 4Mb 512K x 8 | 50mA | FLASH | Parallel | 256KX16 | 16 | 70ns | 4 Mb | 0.000005A | 70 ns | Asynchronous | 5V | 100000 Write/Erase Cycles | 70ms | 8 | YES | YES | YES | 1217 | 16K8K32K64K | YES | TOP | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | R1LP5256ESP-5SI#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 28-SOIC (0.330, 8.40mm Width) | YES | 28 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e2 | yes | 最后一次购买 | 1 (Unlimited) | 28 | EAR99 | Tin/Copper (Sn/Cu) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1MHz | R1LP5256E | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 0.035mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 55ns | 15b | 256 kb | 0.000002A | 55 ns | COMMON | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX29LV400CTTC-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | 0°C~70°C TA | Tray | 2012 | MX29LV | e3 | yes | 不用于新设计 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | unknown | 40 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 4Mb 512K x 8 | ASYNCHRONOUS | FLASH | Parallel | 4MX16 | 16 | 70ns | 0.000005A | 67108864 bit | 70 ns | 3V | 8 | YES | YES | YES | 1217 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C128A-15PC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 24-DIP (0.300, 7.62mm) | 24 | Volatile | 0°C~70°C TA | Tube | 2001 | e0 | Obsolete | 3 (168 Hours) | 24 | EAR99 | 锡铅 | AUTOMATIC POWER-DOWN | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 15GHz | CY7C128A | 24 | 5V | 5V | 16Kb 2K x 8 | 1 | 120mA | SRAM | Parallel | 2KX8 | 3-STATE | 8 | 15ns | 11b | 16 kb | 0.04A | COMMON | Asynchronous | 8b | YES | 4.826mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1670KV18-450BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2014 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 40 | CY7C1670 | 165 | 1.8V | 144Mb 4M x 36 | 1 | 980mA | 450MHz | 450 ps | SRAM | Parallel | 4MX36 | 36 | 21b | 144 Mb | Synchronous | 36b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C136E-25JXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | -40°C~85°C TA | Tube | 2011 | e3 | Obsolete | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 30 | CY7C136 | 5V | 5V | 16Kb 2K x 8 | 2 | 180mA | SRAM | Parallel | 3-STATE | 8 | 25ns | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.08mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RC28F128P33B85B | Intel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Bulk | RC28F128 | 表面贴装 | 64-TBGA | 64-EasyBGA (8x10) | Intel | Non-Volatile | -40°C ~ 85°C (TA) | 2.3V ~ 3.6V | 128Mbit | 52 MHz | 85 ns | FLASH | CFI | - | 2M x 16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT24C04VP2I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | CAT24C04 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 4KX1 | 无卤素 | 5ms | 4 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDMR | 750μm | 3.1mm | 2.1mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1049G30-10VXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tube | 2012 | e4 | 活跃 | 3 (168 Hours) | 36 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | CY7C1049 | R-PDSO-J36 | 3.6V | 2.2V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 8 | 10ns | 4194304 bit | 10 ns | 3.7592mm | 23.495mm | 10.16mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1399B-12VC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28 | Volatile | 0°C~70°C TA | Tube | 2001 | e0 | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | 3V~3.6V | DUAL | 220 | 1 | 3.3V | not_compliant | 12GHz | 未说明 | CY7C1399 | 28 | 不合格 | 3.3V | 3.6V | 3V | 256Kb 32K x 8 | 1 | 55mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 12ns | 15b | 256 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | 3.556mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF400A-70-4C-M1QE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-WFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF400A | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 30mA | 70ns | FLASH | Parallel | 16b | 256KX16 | 16 | 20μs | 18b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C2163KV18-450BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C2163 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 670mA | 450MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 18b | 18 Mb | 0.31A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25C040T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25C040 | 8 | 5V | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 |