类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | 34AA04-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | Non-Volatile | -40°C~85°C TA | Tube | 2016 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | NOT APPLICABLE | 1 | 2.2V | 1.27mm | NOT APPLICABLE | 34AA04 | R-PDIP-T8 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 350ns | EEPROM | I2C | 512X8 | 8 | 5ms | 4096 bit | TS 16949 | I2C | 5ms | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS63LV1024L-10KLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-BSOJ (0.400, 10.16mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 最后一次购买 | 2 (1 Year) | 3.15V~3.45V | 3.3V | 1Mb 128K x 8 | 1 | 160mA | SRAM | Parallel | 10ns | 17b | 1 Mb | Asynchronous | 8b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C010E-15LM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Military grade | Lead, Tin | 表面贴装 | 表面贴装 | 44-CLCC | 44 | Non-Volatile | -55°C~125°C TC | Tube | 1998 | e0 | 活跃 | 1 (Unlimited) | 44 | 3A001.A.2.C | 锡铅 | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 8542.32.00.51 | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | not_compliant | 150GHz | 未说明 | AT28C010 | 不合格 | 5V | 5V | 1Mb 128K x 8 | 80mA | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 128KX8 | 3-STATE | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | NO | 128words | 2.74mm | 16.55mm | 16.55mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
 | CY7C1518V18-200BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | not_compliant | 未说明 | CY7C1518 | 165 | 不合格 | 1.8V | 72Mb 4M x 18 | 1 | 700mA | 200MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 22b | 72 Mb | COMMON | Synchronous | 18b | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TH58NVG4S0FTA20 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | Non-Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 2.7V~3.6V | 16Gb 2G x 8 | FLASH | Parallel | 25ns | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93A46RFVT-WME2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 0.65mm | 未说明 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 1Kb 64 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 64X16 | 16 | 5ms | 0.000002A | 1024 bit | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064N90FFIS20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 64-LBGA | 64 | 64-FBGA (13x11) | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-N | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | Parallel | 3.6V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | 90ns | FLASH | Parallel | 16b | 90ns | 64 Mb | Asynchronous | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LV256AL-10JLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28 | 28-SOJ | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 85°C | -40°C | 3.135V~3.6V | 3.3V | Parallel | 3.6V | 3.135V | 256Kb 32K x 8 | 1 | 35mA | 10ns | SRAM | Parallel | 10ns | 15b | 256 kb | Asynchronous | 8b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC161-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11LC161 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | Serial | 16Kb 2K x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | S29PL032J70BFI122 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | PL-J | e1 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 上下靴块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 2M x 16 | 55mA | FLASH | Parallel | 16b | 2MX16 | 16 | 70ns | 21b | 32 Mb | 0.000005A | 70 ns | Asynchronous | 16b | 3V | YES | YES | YES | 1662 | 4K32K | 8words | YES | BOTTOM/TOP | YES | 1mm | 8.15mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | AT45DB081E-SHN-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TC | Tube | 2005 | e4 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3.6V | 1.7V | SPI, Serial | 8Mb 264Bytes x 4096 pages | 15mA | 15mA | 85MHz | 7 ns | FLASH | SPI | 8b | 8μs, 4ms | 21b | 8 Mb | 0.000001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.91mm | 5.4mm | 5.35mm | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | CAT28C16AW-20T | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 24-SOIC (0.295, 7.50mm Width) | 24 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2009 | e3 | Obsolete | 1 (Unlimited) | 24 | EAR99 | Tin (Sn) | 8542.32.00.51 | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | CAT28C16A | 24 | 5V | 5V | 16Kb 2K x 8 | 35mA | 200ns | EEPROM | Parallel | 2KX8 | 8 | 10ms | 16 kb | 0.0001A | 5V | 10000 Write/Erase Cycles | 10ms | YES | NO | NO | 2.65mm | 15.4mm | 7.5mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25256B-MAHL-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | e4 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | ALSO OPERATES AT MIN 1.8 V AT 5 MHZ | 8542.32.00.51 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | R-PDSO-N8 | 5.5V | 4.5V | 256Kb 32K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 32KX8 | 8 | 5ms | 262144 bit | SERIAL | SPI | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS256SAGMFI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | 665.986997mg | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FS-S | 活跃 | 3 (168 Hours) | 16 | 8542.32.00.51 | 1.7V~2V | DUAL | 1 | 1.8V | 1.27mm | 1.8V | 2V | 1.7V | SPI, Serial | 256Mb 32M x 8 | 65mA | 133MHz | FLASH | SPI - Quad I/O, QPI | 8b | 64MX4 | 4 | 256 Mb | 2 | 2.65mm | 10.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | JS28F064M29EWHA | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | e3 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 哑光锡 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | JS28F064 | 56 | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 25mA | FLASH | Parallel | 4MX16 | 16 | 70ns | 64 Mb | 0.00012A | 70 ns | Asynchronous | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1041G30-10BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 48-VFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.75mm | 未说明 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 10ns | 4194304 bit | 10 ns | 1mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 23LC512T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 23LC512 | 5.5V | 2.5V | 512Kb 64K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 8 | TS 16949 | SERIAL | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23LC512T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 23LC512 | 5.5V | 2.5V | 512Kb 64K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 8 | TS 16949 | SERIAL | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S34ML02G100TFI003 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | ML-1 | e3 | Discontinued | 3 (168 Hours) | 48 | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 3.3V | 3.6V | 2.7V | 2Gb 256M x 8 | 30mA | 20 ns | FLASH | Parallel | 8b | 256MX8 | 8 | 25ns | 29b | 2 Gb | 0.00005A | Asynchronous | 8b | 3V | NO | NO | YES | 2K | 128K | 2kB | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | 11LC020T-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC020 | 8 | 5V | Serial | 2Kb 256 x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 2 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC56AT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93LC56A | 8 | 5.5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | MICROWIRE | 6ms | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA56CT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93AA56C | 8 | 5.5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | SYNCHRONOUS | 3MHz | 200 ns | EEPROM | SPI | 16 | 6ms | 2 kb | MICROWIRE | 6ms | 8 | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11AA161T-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 11AA161 | 8 | 不合格 | 5.5V | 2/5V | Serial | 16Kb 2K x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
| 93C66BT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C66B | 8 | 5V | Serial | 4Kb 256 x 16 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | MICROWIRE | 2ms | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1471BV33-133BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2004 | NoBL™ | e4 | 活跃 | 3 (168 Hours) | 165 | 镍钯金 | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | BOTTOM | 225 | 1 | 3.3V | 30 | CY7C1471 | 165 | 3.3V | 3.6V | 72Mb 2M x 36 | 1 | 305mA | 133MHz | 6.5ns | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 无 | Non-RoHS Compliant |