类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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![]() | 93C76CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S32800B-6TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | 0°C~70°C TA | Tray | e3 | Obsolete | 2 (1 Year) | 86 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 180mA | SYNCHRONOUS | 166MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | 32 | 14b | 256 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL116K0XMFV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2007 | FL1-K | e3 | Obsolete | 3 (168 Hours) | 8 | 哑光锡 | ALSO CONFIGURABLE AS 16M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O | 4MX4 | 4 | 3ms | 16777216 bit | 3V | 2 | 2.159mm | 5.283mm | 5.283mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL128LAGMFI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | FL-L | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 32MX4 | 4 | 134217728 bit | SERIAL | 3V | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT24C08YI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 3.3V | 0.65mm | 40 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 无卤素 | 1 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DMMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT93C66VP2I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | CAT93C66 | 8 | 不合格 | 5V | Serial | 4Kb 512 x 8 256 x 16 | 1mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 无卤素 | 16 | 4 kb | 0.00001A | MICROWIRE | 1000000 Write/Erase Cycles | 100 | SOFTWARE | 8 | 3mm | 2mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25H080F-2LBH2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | 100 YEAR DATA RETENTION | 2.5V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 2.5V | 8Kb 1K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 1KX8 | 8 | 4ms | 8192 bit | SERIAL | SPI | 4ms | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25H320F-2LBH2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 2.5V | 32Kb 4K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 4KX8 | 8 | 4ms | 32768 bit | SERIAL | SPI | 4ms | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL064LABMFV013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | FL-L | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) | IT ALSO HAVE X1 MEMORY WIDTH | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT24C1024B-TH25-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | 1997 | Obsolete | 1 (Unlimited) | 2.5V~5.5V | AT24C1024 | 1Mb 128K x 8 | 1MHz | 550ns | EEPROM | I2C | 5ms | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11AA080-I/TO | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | Non-Volatile | -40°C~85°C TA | Bulk | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 1.8V~5.5V | BOTTOM | 未说明 | 1 | 5V | 1.27mm | 未说明 | 11AA080 | 3 | 不合格 | 5.5V | 2/5V | 1.8V | Serial | 8Kb 1K x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 1KX8 | 8 | 5ms | 8 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93A76RFVM-WMTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 0.65mm | 未说明 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 8Kb 512 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 512X16 | 16 | 5ms | 0.000002A | 8192 bit | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA160CT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25AA160C | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25L160FV-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-LSSOP (0.173, 4.40mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 8542.32.00.51 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR25L160 | 8 | R-PDSO-G8 | 5V | 1.8V | SPI, Serial | 16Kb 2K x 8 | 5MHz | EEPROM | SPI | 2KX8 | 8 | 5ms | 16 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.25mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF400A-70-4C-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 0.8mm | 40 | SST39VF400A | 3.3V | 4Mb 256K x 16 | 30mA | 70ns | FLASH | Parallel | 16b | 256KX16 | 16 | 20μs | 18b | 4 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 128 | 2K | YES | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62WV6416DBLL-45BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 3 (168 Hours) | 48 | EAR99 | 锡银铜 | 2.3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | 48 | 3.6V | 2.5/3.3V | 2.3V | 1Mb 64K x 16 | 1 | 8mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 16b | 1 Mb | 0.000004A | 45 ns | COMMON | Asynchronous | 16b | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C0853AV-100BBC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 172-LFBGA | YES | 172 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 172 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 8542.32.00.41 | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | not_compliant | 未说明 | CY7C0853 | 172 | 不合格 | 3.465V | 3.3V | 3.135V | 9Mb 256K x 36 | 2 | 100MHz | 0.31mA | 5 ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 0.075A | 9437184 bit | COMMON | 3.14V | 1.25mm | 15mm | 15mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS6C8008-55ZIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 2008 | yes | 活跃 | 3 (168 Hours) | 44 | 2.7V~5.5V | DUAL | 260 | 1 | 3V | 0.8mm | 40 | 44 | 3V | 5.5V | 3/5V | 2.7V | 8Mb 1M x 8 | 1 | 60mA | SRAM | Parallel | 3-STATE | 55ns | 20b | 8 Mb | 0.00005A | 55 ns | COMMON | 2V | 1mm | 18.42mm | 10.16mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL512SDSMFV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2007 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 512753664 bit | 3V | 1 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62LV256AL-20TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | 28 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.55mm | 40 | 28 | 3.3V | 3.63V | 2.97V | 256Kb 32K x 8 | 1 | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 20ns | 15b | 256 kb | 0.00002A | 20 ns | COMMON | 2V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CYD09S72V-133BBI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 484-BGA | 484 | Volatile | -40°C~85°C TA | Tray | e0 | Obsolete | 3 (168 Hours) | 484 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE | 1.42V~1.58V 1.7V~1.9V | BOTTOM | 220 | 1 | 3.3V | 1mm | not_compliant | 未说明 | CYD09S72 | 484 | 不合格 | 3.3V | 3.465V | 3.135V | 9Mb 128K x 72 | 2 | 500mA | 133MHz | 4.4ns | SRAM | Parallel | 3-STATE | 72 | 17b | 9 Mb | 0.075A | COMMON | Synchronous | 72b | 3.14V | 1.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S34MS01G200GHI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 67-VFBGA | YES | 67 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | MS-2 | Discontinued | 3 (168 Hours) | 67 | 8542.32.00.51 | 1.7V~1.95V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 1.95V | 1.7V | 1Gb 128M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX8 | 8 | 45ns | 1073741824 bit | 1.8V | 1mm | 8mm | 6.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25VF020B-80-4C-QAE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST25 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1.27mm | SST25VF020B | 3.3V | SPI, Serial | 2Mb 256K x 8 | 20mA | 80MHz | 6 ns | FLASH | SPI | 8b | 8 | 10μs | 1b | 2 Mb | 0.00002A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL128P11TFIV23 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-P | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 1.65V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | R-PDSO-G56 | 3.6V | 1.8/3.33/3.3V | 2.7V | 128Mb 16M x 8 | 0.11mA | FLASH | Parallel | 128MX1 | 1 | 110ns | 128 Mb | 0.000005A | 110 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL512SDPMFIG11 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2015 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 66MHz | 0.075mA | 8 ns | FLASH | SPI - Quad I/O | 64MX8 | 8 | 32b | 512 Mb | 0.0003A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 512B | 2.65mm | 10.3mm | ROHS3 Compliant |