类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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 | IS42S32200E-6TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 86 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 3.3V | 3.6V | 3V | 64Mb 2M x 32 | 1 | 160mA | 160mA | 166MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 13b | 64 Mb | 0.002A | COMMON | 4096 | 1.05mm | 22.42mm | 10.29mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL208K0RMFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | FL2-K | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 25mA | 76MHz | 5 ns | FLASH | SPI - Dual I/O | 8b | 8 | 5ms | 1b | 8 Mb | 0.000032A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 2.159mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | MD2732A-25/B | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Bulk | Rochester Electronics, LLC | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TE28F800F3B95 | Intel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Intel | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BQ4013YMA-120 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 32-DIP Module (0.61, 15.49mm) | 32 | Non-Volatile | 0°C~70°C TA | Tube | no | Obsolete | 1 (Unlimited) | 32 | EAR99 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | BQ4013 | 5V | 5V | 1Mb 128K x 8 | 50mA | 50mA | NVSRAM | Parallel | 8b | 128KX8 | 8 | 120ns | 1 Mb | 0.004A | 120 ns | 8b | 9.53mm | 42.8mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C34098A-10TIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP2 | Volatile | -40°C~85°C TA | Tray | 2001 | 活跃 | 3 (168 Hours) | 85°C | -40°C | 3V~3.6V | 3.3V | Parallel | 3.6V | 3V | 4Mb 256K x 16 | 1 | 10ns | SRAM | Parallel | 10ns | 18b | 4 Mb | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1314KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1314 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 2 | 670mA | 250MHz | 450 ps | SRAM | Parallel | 36 | 18b | 18 Mb | Synchronous | 36b | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC014HT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.5mm | 40 | 24LC014H | 8 | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 1 kb | I2C | 5ms | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1393JV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | 锡银铜 | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | unknown | 20 | CY7C1393 | 165 | 不合格 | 1.8V | 18Mb 1M x 18 | 1 | 865mA | 300MHz | 450 ps | SRAM | Parallel | 18 | 19b | 18 Mb | Synchronous | 18b | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C136A-55NXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-QFP | 52 | Volatile | -40°C~85°C TA | Tray | 2003 | e3 | Obsolete | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.65mm | unknown | 20 | CY7C136 | 52 | 不合格 | 5V | 5V | 16Kb 2K x 8 | 2 | 110mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 22b | 16 kb | 0.015A | 55 ns | COMMON | Asynchronous | 8b | 10mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT24C01A-10PI-2.7 | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA080-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~85°C TA | Tube | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 25AA080 | 8 | 5.5V | 2/5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 1MHz | 475 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 10000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29F800CTTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2008 | MX29F | 活跃 | 3 (168 Hours) | 48 | EAR99 | TOP BOOT BLOCK | 8542.32.00.51 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | 48 | R-PDSO-G48 | 不合格 | 5V | 5V | 8Mb 1M x 8 | ASYNCHRONOUS | FLASH | Parallel | 512KX16 | 16 | 70ns | 8 Mb | 0.00005A | 70 ns | 5V | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 12115 | 16K8K32K64K | YES | TOP | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC014T-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 1 | 0.5mm | 24LC014 | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | N25Q064A13ESE40G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | N25Q064 | 8 | 3/3.3V | 2.7V | SPI, Serial | 64Mb 16M x 4 | 20mA | 108MHz | 7 ns | FLASH | SPI | 1MX64 | 8ms, 5ms | 1b | 64 Mb | 0.0001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.91mm | 5.49mm | 5.49mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA02HT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24AA02H | 8 | 2.5V | 5.5V | 2/5V | 1.7V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C66CT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93C66C | 8 | 5V | 5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC86CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC86C | 8 | 5.5V | 3/5V | 2.5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C86CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C86C | 8 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 2ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C76CT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C56CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C56C | 8 | 5V | 5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV25512YE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | 8 | R-PDSO-G8 | 5.5V | 2.5V | 512Kb 64K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 64KX8 | 8 | 5ms | 524288 bit | SERIAL | SPI | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS66WVE2M16EBLL-70BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 0.75mm | 未说明 | 3.3V | 3.6V | 2.7V | 32Mb 2M x 16 | 1 | ASYNCHRONOUS | PSRAM | Parallel | 16 | 70ns | 21b | 32 Mb | 70 ns | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43DR16640B-3DBL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 表面贴装 | 84-TFBGA | 84 | Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 84 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 0.8mm | 不合格 | 1.8V | 1.9V | 1.7V | 1Gb 64M x 16 | 1 | 220mA | SYNCHRONOUS | 333MHz | 450ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 16b | 1 Gb | 0.015A | COMMON | 8192 | 48 | 48 | 1.2mm | 12.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST38VF6404B-70I/TV | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | SST38 | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST38VF6404 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 0.05mA | 70ns | FLASH | Parallel | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00004A | 2.7V | YES | YES | NO | 8127 | 4K32K | 16B | YES | TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant |