类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | CY62167G30-45ZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 2011 | MoBL® | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.B | 哑光锡 | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | CY62167 | R-PDSO-G48 | 3.6V | 2.2V | 16Mb 2M x 8 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 45ns | 16777216 bit | 45 ns | 8 | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C009V-25AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 1997 | e3 | Obsolete | 3 (168 Hours) | 100 | Matte Tin (Sn) | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.5mm | 25GHz | 30 | CY7C009 | 100 | 3.3V | 3.6V | 3V | 1Mb 128K x 8 | 2 | 165mA | SRAM | Parallel | 3-STATE | 8 | 25ns | 17b | 1 Mb | 0.00005A | COMMON | Asynchronous | 8b | 3V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | M93C66-RMB6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | M93C66 | 8 | 不合格 | 5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | SYNCHRONOUS | 1MHz | 400 ns | EEPROM | SPI | 256X16 | 16 | 5ms | 4 kb | 0.000002A | MICROWIRE | 1000000 Write/Erase Cycles | 10ms | 40 | SOFTWARE | 8 | 0.6mm | 3mm | 2mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
 | MX25U1635EZNI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2013 | MX25xxx35/36 - MXSMIO™ | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | ALSO CONFIGURABLE AS 16M X 1 | 8542.32.00.51 | 1.65V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | 8 | R-PDSO-N8 | 不合格 | 2V | 2V | 1.8V | 1.65V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 4MX4 | 4 | 30μs, 3ms | 16 Mb | 0.00002A | 1.8V | SPI | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | 2 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | 25AA256XT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA256 | 8 | 5V | SPI, Serial | 256Kb 32K x 8 | 6mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 256 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | CY7C0853V-133BBC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 172-LFBGA | 172 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | Obsolete | 3 (168 Hours) | 172 | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | CY7C0853 | 172 | 3.3V | 3.465V | 3.135V | 9Mb 256K x 36 | 2 | 400mA | 133MHz | 4.7 ns | SRAM | Parallel | 3-STATE | 36 | 18b | 9 Mb | 0.075A | COMMON | Synchronous | 36b | 3.14V | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 93C86CT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C86C | 5V | 5V | SPI, Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 2ms | 16 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 950μm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | S29AL016J70FFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | AL-J | 活跃 | 3 (168 Hours) | 64 | EAR99 | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | 不合格 | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | ASYNCHRONOUS | 0.03mA | FLASH | Parallel | 1MX16 | 16 | 70ns | 0.000005A | 16777216 bit | 70 ns | 3V | 8 | YES | YES | YES | 12131 | YES | TOP | YES | 1.4mm | 9mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | BR24G16FVM-3AGTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | BR24G16 | R-PDSO-G8 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 2KX8 | 8 | 5ms | 16 kb | I2C | 5ms | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1520KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1520 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 530mA | 250MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC86C-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC86C | 8 | 5.5V | 3/5V | 2.5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | 93LC56A-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 93LC56A | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| S29GL128P11FFIS40 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | GL-P | 活跃 | 3 (168 Hours) | 2.7V~3.6V | 128Mb 16M x 8 | FLASH | Parallel | 110ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43TR16640BL-107MBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 96-TFBGA | 96 | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.283V~1.45V | BOTTOM | 未说明 | 1 | 1.35V | 0.8mm | 未说明 | 1.35V | 1.45V | 1.283V | 1Gb 64M x 16 | 1 | SYNCHRONOUS | 933MHz | 20ns | DRAM | Parallel | 16b | 64MX16 | 16 | 15ns | 13b | 1 Gb | 1.2mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1383D-100AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2004 | e3 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | unknown | 20 | CY7C1383 | 100 | R-PQFP-G100 | 不合格 | 3.6V | 2.5/3.33.3V | 3.135V | 18Mb 1M x 18 | 100MHz | 8.5ns | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 0.07A | 18874368 bit | COMMON | 3.14V | 1.6mm | 20mm | 14mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | M25P80-VMP6G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | yes | Obsolete | 3 (168 Hours) | 8 | SMD/SMT | EAR99 | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M25P80 | 8 | 3.3V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 8mA | 75MHz | 8 ns | FLASH | SPI | 1 | 15ms, 5ms | 1b | 8 Mb | 0.0001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 15ms | 20 | HARDWARE/SOFTWARE | 256B | 1mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
.png) | AT24C512C-U1UM-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-UFBGA, WLCSP | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 8 | 1.7V~3.6V | BOTTOM | 1 | 0.5mm | AT24C512C | 3.6V | 1.7V | Serial | 512Kb 64K x 8 | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000001A | 1MHz | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 0.6mm | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C46AT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 0.5mm | 40 | 93C46A | 不合格 | 5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS6C4008-55ZIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | YES | 32 | Volatile | -40°C~85°C TA | Tray | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | EAR99 | Tin (Sn) | 2.7V~5.5V | DUAL | 260 | 1 | 3V | 40 | 32 | 3V | 5.5V | 3/5V | 2.7V | 4Mb 512K x 8 | 1 | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 0.00003A | 18MHz | 55 ns | COMMON | 2V | 20.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LV12824-10TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100-LQFP | YES | 100 | 657.000198mg | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | 3.3V | 3.63V | 2.97V | 3Mb 128K x 24 | 1 | 210mA | 210mA | SRAM | Parallel | 3-STATE | 24 | 10ns | 17b | 3 Mb | 0.02A | COMMON | Asynchronous | 24b | 3V | 20mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | MT28EW01GABA1LJS-0SIT | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2007 | e3 | 活跃 | 3 (168 Hours) | 56 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | R-PDSO-G56 | 3.6V | 2.7V | 1Gb 128M x 8 64M x 16 | ASYNCHRONOUS | 95ns | FLASH | Parallel | 64MX16 | 16 | 60ns | 1073741824 bit | 3V | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L6406EZNI-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2010 | MX25xxx05/06 | 不用于新设计 | 3 (168 Hours) | 8 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 8 | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 86MHz | FLASH | SPI | 32MX2 | 2 | 300μs, 5ms | 64 Mb | 0.00002A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | 25LC080CT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC080C | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SDPBHVC03 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 24-TBGA | 24 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2013 | FL-S | 活跃 | 3 (168 Hours) | 24 | ALSO CONFIGURABLE AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 66MHz | 0.1mA | 8 ns | FLASH | SPI - Quad I/O | 32MX8 | 8 | 32b | 256 Mb | 0.0003A | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 1.2mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| 24C01C-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C01C | 8 | 5V | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 1ms | 1 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1ms | 200 | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 |