类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 内存大小 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 定时器/计数器的数量 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 核心架构 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 可编程I/O数 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 刷新周期 | 通用闪存接口 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | TC58NVG2S0HBAI6 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 67-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 67 | 2.7V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | R-PBGA-B67 | 3.6V | 2.7V | 4Gb 512M x 8 | ASYNCHRONOUS | FLASH | Parallel | 512MX8 | 8 | 25ns | 4294967296 bit | 3.3V | 1mm | 8mm | 6.5mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29W800DB70ZE6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | SMD/SMT | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 30 | M29W800 | 48 | 3/3.3V | 2.7V | 10mA | 8Mb 1M x 8 512K x 16 | FLASH | Parallel | 512KX16 | 16 | 70ns | 8 Mb | 0.0001A | 70 ns | Asynchronous | 8 | YES | YES | YES | 12115 | 16K8K32K64K | YES | BOTTOM | YES | 1.2mm | 8mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 8 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | 93C56 | 8 | 5V | 5V | Serial | 4mA | 2Kb 256 x 8 128 x 16 | 2MHz | 400 ns | EEPROM | SPI | 3-STATE | 2ms | 2 kb | 0.0001A | MICROWIRE | 1000000 Write/Erase Cycles | 1ms | 40 | SOFTWARE | 1.5mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43TR16640A-15GBL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 96-TFBGA | YES | 96 | Volatile | 0°C~95°C TC | Tray | e1 | Discontinued | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 10 | 96 | 不合格 | 1.5V | 1.575V | 1.425V | 1 | 190mA | 1Gb 64M x 16 | SYNCHRONOUS | 667MHz | 20ns | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 16b | 1 Gb | 0.015A | COMMON | 8192 | 48 | 48 | 1.2mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512S11DHV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~105°C TA | Tray | 2015 | GL-S | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.6V | 3/3.3V | 2.7V | 60mA | 512Mb 32M x 16 | 110ns | FLASH | Parallel | 32MX16 | 16 | 60ns | 25b | 512 Mb | 0.0002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 512 | 64K | 16words | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M25P16-VMP6G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | yes | Obsolete | 3 (168 Hours) | 8 | SMD/SMT | EAR99 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M25P16 | 8 | 3.3V | 2.7V | 8mA | 16Mb 2M x 8 | 75MHz | 15 ns | FLASH | SPI | 8 | 15ms, 5ms | 1b | 8 b | 0.00001A | SERIAL | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 15ms | 20 | HARDWARE/SOFTWARE | 256B | 85°C | 1mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26WF040BT-104I/NP | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-UFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 未说明 | 1 | 1.8V | 0.5mm | 未说明 | SST26WF040 | 1.8V | 1.95V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 4MX1 | 1 | 1.5ms | 4 Mb | TS 16949 | 256B | 0.6mm | 3mm | 2mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC76AT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC76A | 8 | 不合格 | 5V | Serial | 3mA | 8Kb 1K x 8 | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25SF081-SSHD-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2014 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | AT25SF081 | 3.3V | 3.6V | 2.5V | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | 8 ns | FLASH | SPI | 1 | 5μs, 5ms | 64 Mb | SERIAL | 3V | 256B | 1.75mm | 4.925mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C08B-TH-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | 1997 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 1MHz | AT24C08 | 5V | 2-Wire, I2C, Serial | 5.5V | 1.8V | 3mA | 8Kb 1K x 8 | 1MHz | 550ns | EEPROM | I2C | 5ms | 8 kb | 400kHz | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | RMLV1616AGBG-5S2#AC0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | yes | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 未说明 | 48 | R-PBGA-B48 | 3.6V | 2.7V | 16Mb 1M x 16 | ASYNCHRONOUS | SRAM | Parallel | 1MX16 | 16 | 55ns | 16777216 bit | 55 ns | 8 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF200A-70-4C-EKE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) - annealed | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST39VF200A | 3.3V | 3.6V | 2.7V | 30mA | 2Mb 128K x 16 | 70ns | FLASH | Parallel | 16b | 128KX16 | 16 | 20μs | 17b | 2 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 64 | 2K | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGMFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 75mA | 256Mb 32M x 8 | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 64MX4 | 1b | 256 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2.55mm | 10.3mm | 7.5mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16800F-7BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 54 | 不合格 | 3.3V | 3.6V | 3V | 1 | 100mA | 128Mb 8M x 16 | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | 14b | 128 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL204K0TMFI040 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | FL2-K | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 25mA | 4Mb 512K x 8 | 85MHz | 5 ns | FLASH | SPI | 8b | 8 | 5ms | 1b | 4 Mb | 0.000032A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.75mm | 4.9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021CV33-15ZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | 0°C~70°C TA | Tray | 2002 | e0 | Obsolete | 3 (168 Hours) | 44 | Tin/Lead (Sn/Pb) | 3V~3.6V | DUAL | 240 | 1 | 3.3V | 0.8mm | not_compliant | 15GHz | 30 | CY7C1021 | 44 | 不合格 | 3.3V | 3.63V | 2.97V | 1 | 80mA | 1Mb 64K x 16 | SRAM | Parallel | 3-STATE | 16 | 15ns | 16b | 1 Mb | 0.005A | COMMON | Asynchronous | 16b | 3V | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C09579V-83AC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 144-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2000 | e0 | no | Obsolete | 3 (168 Hours) | 144 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | 3V~3.6V | QUAD | 220 | 1 | 3.3V | 0.5mm | not_compliant | 未说明 | CY7C09579 | 144 | S-PQFP-G144 | 不合格 | 3.465V | 3.3V | 3.135V | 2 | 1.152Mb 32K x 36 | 83MHz | 0.36mA | 6ns | SRAM | Parallel | 32KX36 | 3-STATE | 36 | 0.001A | 1179648 bit | COMMON | 3.14V | 1.6mm | 20mm | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF080B-80-4C-S2AE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST25 | e3 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 1.27mm | SST25VF080B | 3.3V | SPI, Serial | 20mA | 8Mb 1M x 8 | 80MHz | 6 ns | FLASH | SPI | 8b | 8 | 10μs | 1b | 8 Mb | 0.00002A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29W640FT70N6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold, Tin | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2006 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | SMD/SMT | 3A991.B.1.A | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | M29W640 | 48 | 3/3.3V | 2.7V | 10mA | 64Mb 8M x 8 4M x 16 | FLASH | Parallel | 4MX16 | 16 | 70ns | 64 Mb | 0.0001A | 70 ns | Asynchronous | 8 | YES | YES | YES | 8127 | 8K64K | 4/8words | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC76/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 有 | 128B | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 2.5V~6.0V | DUAL | 1 | 3V | 2.54mm | 93LC76 | 8 | 6V | 2.5V | Serial | 3mA | 8Kb 1K x 8 512 x 16 | 3MHz | 400 ns | EEPROM | SPI | 8b | 512X16 | 3 | 5ms | 8 kb | PIC | 13 | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.953mm | 10.16mm | 7.112mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1041B-15ZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | no | Obsolete | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 240 | 1 | 5V | 0.8mm | not_compliant | 15GHz | 30 | CY7C1041 | 44 | R-PDSO-G44 | 不合格 | 5.5V | 5V | 4.5V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 3-STATE | 16 | 15ns | 4194304 bit | 15 ns | COMMON | 4.5V | 1.194mm | 18.415mm | 10.16mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1318KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1318 | 165 | 1.8V | 1 | 380mA | 18Mb 1M x 18 | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 18 Mb | 0.25A | COMMON | Synchronous | 18b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C25652KV18-500BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C25652 | 1.8V | 1.9V | 1.7V | 2 | 1.21A | 72Mb 2M x 36 | 500MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 72 Mb | 0.36A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PC28F512M29EWHD | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 1998 | e1 | yes | Obsolete | 3 (168 Hours) | 64 | 锡银铜 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | 28F512M29EW | 3/3.3V | 2.7V | 31mA | 512Mb 64M x 8 32M x 16 | FLASH | Parallel | 32MX16 | 16 | 100ns | 512 Mb | 0.000225A | 100 ns | Asynchronous | 8 | YES | YES | YES | 512 | 128K | 16/32words | YES | YES | 1.4mm | 13mm | 11mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C01CT-I/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 6 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 24C01C | 5V | I2C, Serial | 3mA | 1Kb 128 x 8 | 400kHz | 900ns | EEPROM | I2C | 128X8 | 8 | 1ms | 1 kb | I2C | 1ms | 1.45mm | 2.9mm | 1.55mm | 无 | ROHS3 Compliant |