类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | AT25320B-SSPDGV-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 1997 | Automotive, AEC-Q100 | 活跃 | 3 (168 Hours) | 8 | 2.5V~5.5V | DUAL | 1 | 5V | 1.27mm | R-PDSO-G8 | 5.5V | 2.5V | SPI, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 40 ns | EEPROM | SPI | 4KX8 | 8 | 5ms | 32 kb | 5MHz | SPI | 5ms | 1.75mm | 4.9mm | 3.9mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT93C46VI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | CAT93C46 | 8 | 5V | Serial | 1Kb 128 x 8 64 x 16 | 1mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 无卤素 | 16 | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 100 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C66C-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66C | 8 | 5V | 5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC512T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.65mm | 40 | 24LC512 | 8 | 5V | I2C, Serial | 512Kb 64K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064N90TFI023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | GL-N | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 哑光锡 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | FLASH | Parallel | 4MX16 | 16 | 90ns | 64 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16400F-7TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 54 | 3.3V | 3.6V | 3V | 64Mb 4M x 16 | 1 | 100mA | 100mA | 143MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | 14b | 64 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25256LI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 1 | 5V | 2.54mm | CAT25256 | 8 | 5V | SPI, Serial | 256Kb 32K x 8 | 4mA | 20MHz | 75 ns | EEPROM | SPI | 无卤素 | 8 | 5ms | 256 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 5.33mm | 9.27mm | 7.62mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | RMLV0414EGSB-4S2#AA1 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tube | yes | 活跃 | 3 (168 Hours) | 44 | 2.7V~3.6V | DUAL | 1 | 3V | 0.8mm | 44 | R-PDSO-G44 | 3.6V | 2.7V | 4Mb 256K x 16 | ASYNCHRONOUS | SRAM | Parallel | 256KX16 | 16 | 45ns | 4194304 bit | 45 ns | 1.2mm | 18.41mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C25682KV18-550BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C25682 | 165 | 1.8V | 72Mb 4M x 18 | 1 | 760mA | 550MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | 0.38A | COMMON | Synchronous | 18b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC46BT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC46B | 8 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS64WV12816DBLL-12CTLA3-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~125°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 哑光锡 | 2.4V~3.6V | DUAL | 225 | 1 | 3.3V | 0.8mm | 3.6V | 2.5/3.3V | 2.4V | 2Mb 128K x 16 | 1 | 60mA | SRAM | Parallel | 3-STATE | 16 | 12ns | 17b | 2 Mb | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC040T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC040 | 8 | 5V | Serial | 4Kb 512 x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 4 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 750μm | 3mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC76CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC76C | 8 | 5.5V | 3/5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 11LC080T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC080 | 8 | 5V | Serial | 8Kb 1K x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 8 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 750μm | 2mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62137FV30LL-45BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY62137 | 3V | 3.6V | 2.2V | 2Mb 128K x 16 | 1 | 18mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 17b | 2 Mb | 0.000004A | 45 ns | COMMON | Asynchronous | 16b | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46C-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 93C46C | 8 | 5V | 5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 5.334mm | 9.27mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25160A-10TU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 20MHz | AT25160 | 5V | SPI, Serial | 5.5V | 2.7V | 16Kb 2K x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 16 kb | 20MHz | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC256F-90JU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | 4.5V~5.5V | QUAD | 245 | 1 | 5V | 1.27mm | 90GHz | 40 | AT28HC256 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 80mA | ASYNCHRONOUS | 90ns | EEPROM | Parallel | 8 | 3ms | 256 kb | 0.0003A | 5V | 10000 Write/Erase Cycles | 3ms | YES | YES | NO | 64words | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512S11FHIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 不合格 | 3.6V | 3/3.3V | 2.7V | 512Mb 32M x 16 | ASYNCHRONOUS | 0.08mA | 110ns | FLASH | Parallel | 32MX16 | 16 | 60ns | 25b | 512 Mb | 0.0001A | 2.7V | YES | YES | YES | 512 | 64K | 32B | YES | YES | 1.4mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA256-E/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.7V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24AA256 | 8 | 不合格 | 5.5V | 1.7V | I2C, Serial | 256Kb 32K x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 256 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | NO | 1mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29F800FT5AN6E2 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Automotive grade | Gold, Tin | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | 哑光锡 | TOP BOOT BLOCK | 8542.32.00.51 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 30 | M29F800 | 48 | 5V | 5V | 4.5V | 8Mb 1M x 8 512K x 16 | 20mA | FLASH | Parallel | 512KX16 | 16 | 55ns | 8 Mb | 0.00012A | AEC-Q100 | 55 ns | Asynchronous | 8 | YES | YES | YES | 12115 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF1601-70-4I-MBQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | 锡银铜 | BOTTOM BOOT-BLOCK | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 40 | SST39WF1601 | 48 | 1.8V | 1.95V | 1.65V | 16Mb 1M x 16 | 10mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 40μs | 20b | 16 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | BOTTOM | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FM25V20-PG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2012 | F-RAM™ | Obsolete | 1 (Unlimited) | 8 | EAR99 | 2V~3.6V | DUAL | 未说明 | 1 | 3.3V | 2.54mm | 未说明 | FM25V20 | 8 | 不合格 | 3.3V | 3.6V | 2V | SPI, Serial | 2Mb 256K x 8 | 3mA | SYNCHRONOUS | 40MHz | 18 ns | FRAM | SPI | 8 | 2 Mb | 0.00025A | 8b | 5.334mm | 7.62mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | NAND128W3A2BN6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold, Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2004 | yes | Obsolete | 3 (168 Hours) | SMD/SMT | 3A991.B.1.A | 8542.32.00.51 | 3V | 2.7V~3.6V | NAND128-A | 48 | 3V | 128Mb 16M x 8 | 20mA | FLASH | Parallel | 50ns | 24b | 128 Mb | Asynchronous | 8b | 528B | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M95020-WDW6TP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 1 | 5V | 0.65mm | M95020 | 8 | 5V | SPI, Serial | 2Kb 256 x 8 | 5mA | 20MHz | 35 ns | EEPROM | SPI | 8 | 5ms | 2 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant |