类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | 93AA46T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000K ERASE/WRITE CYCLE; 200 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA46 | 8 | 5.5V | Serial | 1Kb 128 x 8 64 x 16 | 3mA | 2MHz | 2 μs | EEPROM | SPI | 64X16 | 16 | 10ms | 1 kb | MICROWIRE | 10ms | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021D-10VXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 44-BSOJ (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tube | 1996 | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY7C1021 | 44 | 5V | 5V | 1Mb 64K x 16 | 1 | 80mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 16b | 1 Mb | 0.003A | 100MHz | COMMON | Asynchronous | 16b | 2V | 3.7592mm | 28.575mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC040-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 11LC040 | 8 | 5V | Serial | 4Kb 512 x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 4 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 950μm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14V101NA-BA45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 30 | CY14V101 | 48 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 52mA | NVSRAM | Parallel | 16b | 64KX16 | 16 | 45ns | 1 Mb | 0.008A | 45 ns | 16b | 1.2mm | 10mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC512T-I/SMG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 8-SOIJ | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.5V~5.5V | 400kHz | 24LC512 | I2C, Serial | 5.5V | 2.5V | 512Kb 64K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 512 kb | 400kHz | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39LF040-55-4C-WHE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 32-TFSOP (0.488, 12.40mm Width) | YES | 32 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | yes | 活跃 | 3 (168 Hours) | 32 | 3V~3.6V | DUAL | 1 | 3.3V | 0.5mm | SST39LF040 | 3.6V | 3V | 4Mb 512K x 8 | 20mA | 55ns | FLASH | Parallel | 8b | 512KX8 | 8 | 20μs | 19b | 4 Mb | 3V | 1.2mm | 12.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1312KV18-250BZCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2003 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1312 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 560mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1550KV18-400BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1550 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 750mA | 400MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 20b | 72 Mb | 0.32A | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1312BV18-200BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | unknown | 20 | CY7C1312 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 675mA | 200MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | MT28EW01GABA1LPC-0SIT | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | Industrial grade | 表面贴装 | 64-LBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | 活跃 | 3 (168 Hours) | 64 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | R-PBGA-B64 | 3.6V | 2.7V | 1Gb 128M x 8 64M x 16 | ASYNCHRONOUS | 95ns | FLASH | Parallel | 64MX16 | 16 | 60ns | 1073741824 bit | 3V | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC04BT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 24LC04B | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXMR | NO | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N90BFI033 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | GL-N | e1 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 0.8mm | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 863 | 8K64K | 8/16words | YES | TOP | YES | 1mm | 8.15mm | 6.15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL512SAGMFV013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | FL-S | e3 | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3.6V | 3/3.3V | 2.7V | Parallel, SPI, Serial | 512Mb 64M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 64MX8 | 8 | 32b | 512 Mb | 0.0003A | Asynchronous | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 2.65mm | 10.3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LPS25618A-200TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | YES | 100 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 100 | Matte Tin (Sn) - annealed | 流水线结构 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | 3.3V | 3.465V | 3.135V | 4.5Mb 256K x 18 | 2 | 210mA | 200MHz | 3.1ns | SRAM | Parallel | 3-STATE | 18 | 18b | 4.5 Mb | 0.000075A | COMMON | Synchronous | 18b | 3.14V | 1.6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC58NYG1S3HBAI6 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 67-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 67 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | R-PBGA-B67 | 1.95V | 1.7V | 2Gb 256M x 8 | ASYNCHRONOUS | FLASH | Parallel | 256MX8 | 8 | 25ns | 2147483648 bit | 1.8V | 1mm | 8mm | 6.5mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | THGBMHG7C1LBAIL | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 153-WFBGA | 153-WFBGA (11.5x13) | Non-Volatile | -25°C~85°C TA | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | 2.7V~3.6V | 128Gb 16G x 8 | 52MHz | FLASH | eMMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL01GP11TFIR10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | GL-P | e3 | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 3.6V | 3.3V | 3V | 1Gb 128M x 8 | 110mA | FLASH | Parallel | 8b | 1GX1 | 1 | 110ns | 8 b | 0.000005A | 110 ns | Asynchronous | 3V | 8 | YES | YES | YES | 1K | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | 24LC32AX-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC32A | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G16NUX-3TTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | 8542.32.00.51 | 1.6V~5.5V | DUAL | 未说明 | 1 | 0.5mm | 未说明 | R-PDSO-N8 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 2KX8 | 8 | 5ms | 16384 bit | I2C | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V016SA12PHG8 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Commercial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 3V~3.6V | IDT71V016 | 1Mb 64K x 16 | SRAM | Parallel | 12ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF800A-70-4I-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF800A | 48 | 3.3V | 3.6V | 2.7V | 8Mb 512K x 16 | 30mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 16 | 20μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| THGBMHG9C4LBAIR | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 153-WFBGA | Non-Volatile | -25°C~85°C TA | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | 2.7V~3.6V | 512Gb 64G x 8 | 52MHz | FLASH | eMMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46AX-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C46A | 8 | 5V | 5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | W9816G6JH-6 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2011 | 活跃 | 3 (168 Hours) | 50 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | R-PDSO-G50 | 3.6V | 3V | 16Mb 1M x 16 | 1 | SYNCHRONOUS | 166MHz | 5ns | DRAM | Parallel | 1MX16 | 16 | 16777216 bit | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25160LI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Gold | Surface Mount, Through Hole | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 1 | 5V | 2.54mm | CAT25160 | 8 | 5.5V | 2/5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | 2mA | 20MHz | 40 ns | EEPROM | SPI | 无卤素 | 5ms | 16 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 4.95mm | 10.16mm | 7.11mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 |