类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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25LC080D-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC080D | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
CY6264-70SNXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Volatile | 0°C~70°C TA | Tube | 1996 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 70GHz | 20 | CY6264 | 28 | 5V | 5V | 64Kb 8K x 8 | 1 | 100mA | SRAM | Parallel | 8KX8 | 3-STATE | 8 | 70ns | 13b | 64 kb | 70 ns | COMMON | Asynchronous | 8b | 2.794mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
CAT24C04YI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 3.3V | 0.65mm | 40 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 4KX1 | 无卤素 | 1 | 5ms | 4 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
BR25S128F-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | BR25S128 | 8 | 不合格 | 5.5V | 1.7V | SPI, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 8 | 5ms | 128 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1.6mm | 5mm | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
MX29LV400CBTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2003 | MX29LV | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | unknown | 40 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 4Mb 512K x 8 | ASYNCHRONOUS | FLASH | Parallel | 4MX16 | 16 | 70ns | 4 Mb | 0.000005A | 70 ns | 3V | 8 | YES | YES | YES | 1217 | 16K8K32K64K | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
25AA040A-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
CY7C024E-55AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e4 | Obsolete | 3 (168 Hours) | 100 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.5mm | 30 | CY7C024 | 100 | 5V | 5V | 64Kb 4K x 16 | 2 | 230mA | SRAM | Parallel | 4KX16 | 3-STATE | 16 | 55ns | 24b | 64 kb | 0.0015A | 55 ns | COMMON | Asynchronous | 16b | 2V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
SST39SF040-45-4I-WHE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-TFSOP (0.488, 12.40mm Width) | 32 | 32-TSOP | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | Obsolete | 3 (168 Hours) | 85°C | -40°C | 4.5V~5.5V | SST39SF040 | 5V | Parallel | 5.5V | 4.5V | 4Mb 512K x 8 | 25mA | 45ns | FLASH | Parallel | 8b | 20μs | 19b | 4 Mb | Asynchronous | 8b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1412BV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | unknown | 20 | CY7C1412 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 850mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
W29GL128CL9T | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | IT ALSO OPERATES AT 3 V TO 3.6 V | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | 56 | R-PDSO-G56 | 不合格 | 3.6V | 1.8/3.33/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | ASYNCHRONOUS | FLASH | Parallel | 128MX1 | 1 | 90ns | 0.000005A | 134217728 bit | 100 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
AT28C256F-15SU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 28 | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | R-PDSO-G28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 32KX8 | 8 | 3ms | 262144 bit | 5V | 3ms | 2.65mm | 17.9mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1361C-100BZXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~125°C TA | Tray | 2003 | 活跃 | 3 (168 Hours) | 165 | 3A991.B.2.B | 8542.32.00.41 | 3.135V~3.6V | BOTTOM | 1 | 3.3V | 1mm | 3.6V | 3.135V | 9Mb 256K x 36 | 100MHz | 8.5ns | SRAM | Parallel | 256KX36 | 36 | 9437184 bit | 1.4mm | 15mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SST39WF400B-70-4I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | SST39WF400B | 48 | 1.8V | 1.95V | 1.65V | 4Mb 256K x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 256KX16 | 16 | 40μs | 18b | 4 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 128 | 2K | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
BR24L32FVT-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR24L32 | 8 | 5.5V | 2/5V | 1.7V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.25mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
S29AL016J70BFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | AL-J | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | 不合格 | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 1MX16 | 16 | 70ns | 16 Mb | 0.000005A | 70 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1mm | 8.15mm | 6.15mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
IS43TR16128C-125KBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 10 | R-PBGA-B96 | 1.575V | 1.425V | 2Gb 128M x 16 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 1.2mm | 13mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AT45DB161E-SHD-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.5V | SPI, Serial | 16Mb 528Bytes x 4096 pages | 26mA | 85MHz | 6 ns | FLASH | SPI | 8b | 16MX1 | 1 | 8μs, 4ms | 21b | 16 Mb | 0.00001A | Synchronous | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 512B | 2.16mm | 5.29mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
AT45DB321E-SHF-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 3.6V | 2.3V | SPI, Serial | 32Mb 528Bytes x 8192 pages | SYNCHRONOUS | 22mA | 85MHz | 7 ns | FLASH | SPI | 8b | 32MX1 | 8μs, 4ms | 32 Mb | 3V | 528B | 1.91mm | 5.4mm | 5.35mm | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
93LC56A-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 1998 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93LC56A | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
CY7C024E-25AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e4 | Obsolete | 3 (168 Hours) | 100 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.5mm | 30 | CY7C024 | 100 | 5V | 5V | 64Kb 4K x 16 | 2 | 250mA | SRAM | Parallel | 4KX16 | 3-STATE | 16 | 25ns | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
MX25L25645GZ2I-08G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tray | 2016 | MXSMIO™ | 活跃 | 3 (168 Hours) | 2.7V~3.6V | 未说明 | 未说明 | 256Mb 32M x 8 | 120MHz | FLASH | SPI | 30μs, 750μs | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AT25320A-10TU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 20MHz | AT25320 | 5V | SPI, Serial | 5.5V | 2.7V | 32Kb 4K x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 32 kb | 10MHz | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1049GN30-10VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | YES | 36 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | yes | 活跃 | 3 (168 Hours) | 36 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 3.6V | 2.2V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 8 | 10ns | 4194304 bit | 10 ns | 3.7592mm | 23.495mm | 10.16mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MB85RS2MTPF-G-JNERE2 | Fujitsu Electronics America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 8-SOP | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | 不用于新设计 | 1 (Unlimited) | 85°C | -40°C | 1.8V~3.6V | 40MHz | 3.3V | SPI, Serial | 2Mb 256K x 8 | 25MHz | FRAM | SPI | 8b | 2 Mb | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL064LABNFI043 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-UDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | FL-L | yes | 活跃 | 3 (168 Hours) | 8 | IT IS ALSO CONFIGURED AS 64M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.8mm | 未说明 | S-PDSO-N8 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 0.6mm | 4mm | 4mm | ROHS3 Compliant |