类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | JS28F00AM29EWLA | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | e4 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 镍钯金 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | 28F00AM29EW | 56 | 3/3.3V | 2.7V | 1Gb 128M x 8 64M x 16 | 31mA | FLASH | Parallel | 64MX16 | 16 | 110ns | 1 Gb | 0.00024A | 110 ns | Asynchronous | 8 | YES | YES | YES | 1K | 128K | 16/32words | YES | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | AS4C16M16SA-7TCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54-TSOP II | Volatile | 0°C~70°C TA | Tray | 2014 | 活跃 | 3 (168 Hours) | 70°C | 0°C | 3V~3.6V | 143MHz | Parallel | 256Mb 16M x 16 | 143MHz | 5.4ns | DRAM | Parallel | 14ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL064LABMFB013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, FL-L | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) | IT ALSO HAVE X1 MEMORY WIDTH | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1525KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | 最后一次购买 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1525 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 8M x 9 | 2 | 640mA | 250MHz | 450 ps | SRAM | Parallel | 8MX9 | 3-STATE | 9 | 22b | 72 Mb | SEPARATE | Synchronous | 9b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M93S56-WMN6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M93S56 | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 128 x 16 | 2MHz | 2 μs | EEPROM | SPI | 3-STATE | 16 | 5ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M27C512-70C6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 32 | EAR99 | 锡铅 | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 70GHz | 未说明 | M27C512 | 32 | 不合格 | 5V | 5V | 512Kb 64K x 8 | 50mA | ASYNCHRONOUS | 70ns | EPROM | Parallel | 64KX8 | 3-STATE | 512 kb | 0.0001A | COMMON | 2.8mm | 14.05mm | 11.51mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR24A64F-WME2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | 64Kb 8K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 0.000002A | 65536 bit | SERIAL | I2C | 100000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC014H-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 24LC014H | 8 | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 1 kb | I2C | 5ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL256SAGMFI003 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | FL-S | 活跃 | 3 (168 Hours) | 16 | 3A991.B.1.A | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 64MX4 | 4 | 1b | 256 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 2.65mm | 10.3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL032N90FFI040 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-N | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 16b | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 863 | 8/16words | YES | BOTTOM | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | 11AA161T-I/TT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) - annealed | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 11AA161 | 3 | 不合格 | 5.5V | 2/5V | 1.8V | Serial | 16Kb 2K x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 2KX8 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.12mm | 2.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1512AV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | 165 | 165-FBGA (15x17) | Volatile | 0°C~70°C TA | Tray | 2003 | Obsolete | 3 (168 Hours) | 70°C | 0°C | 1.7V~1.9V | 250MHz | CY7C1512 | 1.8V | Parallel | 1.9V | 1.7V | 72Mb 4M x 18 | 250MHz | 450 ps | SRAM | Parallel | 72 Mb | 250MHz | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS25LP016D-JBLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 8542.32.00.51 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 10 | S-PDSO-G8 | 3.6V | 2.3V | 16Mb 2M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 2MX8 | 8 | 800μs | 16777216 bit | SERIAL | 3V | 1 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC56CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93LC56C | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1380D-250AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1380 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 350mA | 250MHz | 2.6ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62WV5128BLL-55TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 32 | Matte Tin (Sn) - annealed | 2.5V~3.6V | DUAL | 260 | 1 | 2.8V | 0.5mm | 40 | 32 | 3.3V | 3.6V | 2.5V | 4Mb 512K x 8 | 1 | 45mA | SRAM | Parallel | 3-STATE | 55ns | 19b | 4 Mb | 55 ns | COMMON | Asynchronous | 8b | 1.05mm | 21.08mm | 10.29mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA320A-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RC28F128J3F75A | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Lead, Silver, Tin | 表面贴装 | 64-TBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | StrataFlash™ | e0 | no | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Lead/Silver (Sn/Pb/Ag) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 235 | 1 | 3V | 1mm | 30 | 28F128J3 | 64 | 3/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | 54mA | FLASH | Parallel | 8MX16 | 16 | 75ns | 128 Mb | 0.00012A | 75 ns | Asynchronous | 8 | NO | NO | YES | 128 | 128K | 4/8words | YES | YES | 1.2mm | 13mm | 10mm | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | 11AA010-I/TO | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | Non-Volatile | -40°C~85°C TA | Bulk | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) - annealed | 1.8V~5.5V | BOTTOM | 1 | 5V | 1.27mm | 11AA010 | 3 | 5.5V | 2/5V | 1.8V | Serial | 1Kb 128 x 8 | 5mA | 100kHz | EEPROM | 单线 | 128X8 | 8 | 5ms | 1 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT24C08BN-SH-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | 2009 | Obsolete | 1 (Unlimited) | SMD/SMT | 85°C | -40°C | 1.8V~5.5V | 1MHz | AT24C08 | 2-Wire, I2C, Serial | 5.5V | 1.8V | 8Kb 1K x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 8 kb | 400kHz | 1.5mm | 5mm | 3.99mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1009D-10VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 32-BSOJ (0.300, 7.62mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e4 | 活跃 | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY7C1009 | 32 | 5V | 5V | 5V | 1Mb 128K x 8 | 1 | 80mA | SRAM | Parallel | 3-STATE | 8 | 10ns | 17b | 1 Mb | 0.003A | 100MHz | COMMON | Asynchronous | 8b | 3.556mm | 20.828mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62147EV30LL-45BVXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 40 | CY62147 | 48 | 3V | 3.6V | 2.2V | 4Mb 256K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 18b | 4 Mb | 0.000007A | 45 ns | COMMON | Asynchronous | 16b | 8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL064N90TFI043 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | GL-N | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | FLASH | Parallel | 4MX16 | 16 | 90ns | 64 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 8127 | 8K64K | 8/16words | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
![]() | 34VL02/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -20°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 1.5V~3.6V | DUAL | 1 | 2.5V | 1.27mm | 34VL02 | 8 | 不合格 | 3.3V | 3.6V | 1.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 5.334mm | 9.27mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11AA02E48T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 11AA02E48 | 8 | 不合格 | 5V | Serial | 2Kb 256 x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 5ms | 2 kb | 0.000001A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.25mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 |