类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 逻辑功能 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | 24AA01HT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA01H | 8 | 2.5V | 5.5V | 2/5V | 1.7V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC01BHT-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 5 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 5 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 40 | 24LC01BH | 5 | 5V | 2-Wire, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 128X8 | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 200 | HARDWARE | 1010XXXR | 2.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BQ2024DBZRG4 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | ACTIVE (Last Updated: 6 days ago) | Gold | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | Non-Volatile | -20°C~70°C TA | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 2.65V~5.5V | DUAL | 260 | 1 | 0.96mm | BQ2024 | 3 | 5.5V | 2.65V | Serial | 1.5K 6 pagesx32bytes | 20μA | 20μA | 0.01667MHz | OR | EPROM | 单线 | 1.5KX1 | OPEN-DRAIN | 1.5 kb | COMMON | 1.22mm | 2.92mm | 1.3mm | 1mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B256LA-SP45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e4 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.635mm | 30 | CY14*256 | 48 | 3V | 3.6V | 2.7V | 256Kb 32K x 8 | 52mA | NVSRAM | Parallel | 8b | 32KX8 | 8 | 45ns | 256 kb | 0.005A | 45 ns | 8b | 2.794mm | 15.875mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G128FVM-3AGTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 未说明 | 1 | 0.65mm | 未说明 | BR24G128 | R-PDSO-G8 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 16KX8 | 8 | 5ms | 128 kb | I2C | 5ms | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC64B-70SU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e3 | 活跃 | 2 (1 Year) | 28 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G28 | 5.5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 70ns | EEPROM | Parallel | 8KX8 | 8 | 10ms | 65536 bit | 5V | 10ms | 2.65mm | 17.9mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23LC1024-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 23LC1024 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 1Mb 128K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 128KX8 | 3-STATE | 8 | 0.000012A | 1048576 bit | 32 ns | SERIAL | COMMON/SEPARATE | 2.5V | NO | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | RMLV0408EGSB-4S2#AA1 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Industrial grade | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tube | yes | 活跃 | 3 (168 Hours) | 32 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 32 | R-PDSO-G32 | 3.6V | 2.7V | 4Mb 512K x 8 | ASYNCHRONOUS | SRAM | Parallel | 512KX8 | 8 | 45ns | 4194304 bit | 45 ns | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF016BT-104I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | SST26VF016B | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | 0.025mA | FLASH | SPI - Quad I/O | 16MX1 | 1 | 1.5ms | 16 Mb | 0.000025A | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 256B | BOTTOM/TOP | NO | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| 25LC160C-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160C | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT21CS01-SSHM16-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2014 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~3.6V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | AT21CS01 | 3.6V | 1.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC46AT-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.95mm | 40 | 93LC46A | 6 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 128X8 | 8 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 8 | 1.45mm | 2.95mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | R1LV0408DSB-5SI#B0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | 2007 | yes | Obsolete | 2 (1 Year) | 32 | 2.7V~3.6V | DUAL | 1 | 3V | 1MHz | R1LV0408D | 32 | 3V | 3.6V | 2.7V | 4Mb 512K x 8 | 1 | 10mA | SRAM | Parallel | 55ns | 19b | 4 Mb | 55 ns | Asynchronous | 8b | 1mm | 21.05mm | 10.26mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | JS28F128P33BF70A | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TC | Tray | 2010 | yes | Obsolete | 3 (168 Hours) | 56 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | JS28F128 | 2.5/3.3V | 2.3V | Parallel, Serial | 128Mb 8M x 16 | 28mA | 40MHz | FLASH | Parallel | 8MX16 | 70ns | 23b | 128 Mb | 0.002A | 20 ns | Asynchronous | 16b | NO | NO | 4127 | 16K64K | 8words | BOTTOM | 1.03mm | 18.6mm | 14.2mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B101LA-SP25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | 600.301152mg | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e4 | yes | 活跃 | 3 (168 Hours) | 48 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.635mm | 30 | CY14B101 | 48 | 3V | 3.6V | 2.7V | 1Mb 128K x 8 | 70mA | 70mA | NVSRAM | Parallel | 16b | 128KX8 | 8 | 25ns | 1 Mb | 0.005A | 25 ns | 8b | 2.794mm | 15.875mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC025-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 24LC025 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1018DV33-10VXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 32-BSOJ (0.300, 7.62mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | 2002 | e4 | yes | 活跃 | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 30 | CY7C1018 | 32 | 3.3V | 3.63V | 2.97V | 1Mb 128K x 8 | 1 | 60mA | SRAM | Parallel | 3-STATE | 8 | 10ns | 17b | 1 Mb | 0.003A | 100MHz | COMMON | Asynchronous | 8b | 2V | 3.556mm | 20.828mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256P10FFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-P | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 256Mb 32M x 8 | 110mA | FLASH | Parallel | 8b | 256MX1 | 1 | 100ns | 256 Mb | 0.000005A | 100 ns | Asynchronous | 3V | 8 | YES | YES | YES | 256 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
 | M29F080D70M6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-SOIC (0.525, 13.34mm Width) | YES | 44 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 3 (168 Hours) | 44 | EAR99 | 锡铅 | 8542.32.00.51 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | M29F080 | 44 | 不合格 | 5.5V | 5V | 4.5V | 8Mb 1M x 8 | ASYNCHRONOUS | FLASH | Parallel | 8b | 1MX8 | 8 | 70ns | 0.00015A | 70 ns | 5V | YES | YES | YES | 16 | 64K | YES | YES | 2.8mm | 28.2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JS28F256P30TFE | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | StrataFlash™ | e3 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991 | 8542.32.00.51 | 1.7V~2V | DUAL | 260 | 1 | 1.8V | 0.5mm | 30 | 28F256P30 | 1.8V | 1.81.8/3.3V | 1.7V | Parallel, Serial | 256Mb 16M x 16 | 31mA | 40MHz | FLASH | Parallel | 16MX16 | 16 | 110ns | 24b | 256 Mb | 0.00021A | 20 ns | Asynchronous | 16b | NO | NO | 4255 | 16K64K | TOP | 1.025mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF802C-70-4C-EKE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) - annealed | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 0.5mm | 5MHz | 40 | SST39VF802C | 48 | 3.3V | 3.6V | 2.7V | 8Mb 512K x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | TOP | YES | 1.05mm | 18.5mm | 12.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | CY7C1460AV33-167AXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2006 | NoBL™ | e4 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1460 | 3.3V | 3.6V | 3.135V | 36Mb 1M x 36 | 4 | 375mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.12A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC160D-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256S10DHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.3V | 3.6V | 2.7V | 256Mb 16M x 16 | 60mA | 100ns | FLASH | Parallel | 16b | 32MX8 | 8 | 60ns | 24b | 256 Mb | 0.0001A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 64K | 32B | YES | YES | 1.4mm | 9mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC76C-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 3V | 2.54mm | 93LC76C | 8 | 5.5V | 3/5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 5.334mm | 9.27mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 |