类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 自我刷新 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||
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![]() | AT25320AN-10SU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 20MHz | AT25320 | 5V | SPI, Serial | 5.5V | 2.7V | 32Kb 4K x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 32 kb | 10MHz | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C86C-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 93C86C | 8 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 2ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | HARDWARE/SOFTWARE | 8 | 5.334mm | 9.27mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS62WV6416DBLL-45TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 44 | EAR99 | 哑光锡 | 2.3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 44 | 3.6V | 2.5/3.3V | 2.3V | 1Mb 64K x 16 | 1 | 8mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 16b | 1 Mb | 0.000004A | 22MHz | 45 ns | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT27C040-70JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2017 | 活跃 | 2 (1 Year) | 32 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | R-PQCC-J32 | 5.5V | 4.5V | 4Mb 512K x 8 | ASYNCHRONOUS | 70ns | EPROM | Parallel | 512KX8 | 8 | 4194304 bit | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT93C46E-TH-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | 260 | 40 | AT93C46 | 5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | EEPROM | SPI | 5ms | 1 kb | MICROWIRE | 1000000 Write/Erase Cycles | 100 | SOFTWARE | 1.05mm | 4.5mm | 3.1mm | 无 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS25LP256D-JLLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~105°C TA | Tray | 活跃 | 3 (168 Hours) | 8 | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-N8 | 3.6V | 2.3V | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 32MX8 | 8 | 800μs | 268435456 bit | SERIAL | 3V | 0.85mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25U25635FZ2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | MX25xxx35/36 - MXSMIO™ | 不用于新设计 | 3 (168 Hours) | 8 | CAN BE ORGNISED AS 256 MBIT X 1 | 1.65V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | unknown | 未说明 | 8 | R-PDSO-N8 | 不合格 | 2V | 1.8V | 1.65V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI | 64MX4 | 4 | 30μs, 3ms | 0.00002A | 268435456 bit | 1.8V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1370DV25-167BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e0 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 锡铅 | 流水线结构 | 2.375V~2.625V | BOTTOM | 1 | 2.5V | 1mm | CY7C1370 | 165 | 2.5V | 2.625V | 2.375V | 18Mb 512K x 36 | 4 | 275mA | 167MHz | 3.4ns | SRAM | Parallel | 512KX36 | 36 | 19b | 18 Mb | Synchronous | 36b | 15mm | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M25P40-VMN6PB | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2001 | e4 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.B.1 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.3V~3.6V | DUAL | 260 | 1 | 2.7V | 1.27mm | 30 | M25P40 | 8 | 2.5/3.3V | 2.3V | SPI, Serial | 4Mb 512K x 8 | 8mA | 75MHz | 8 ns | FLASH | SPI | 15ms, 5ms | 1b | 4 Mb | 0.00001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.75mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MR25H10CDF | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | 活跃 | 3 (168 Hours) | 8 | EAR99 | 600mW | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 8 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 1Mb 128K x 8 | 27mA | 40MHz | 10 ns | RAM | SPI | 8b | 8 | 1 Mb | 0.000115A | 8b | 0.9mm | 6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28LV010-20JU-319 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 3V~3.6V | QUAD | 245 | 1 | 3.3V | 1.27mm | 40 | R-PQCC-J32 | 3.465V | 3.135V | 1Mb 128K x 8 | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1048576 bit | 3V | 10ms | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C0241E-25AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e4 | Obsolete | 3 (168 Hours) | 100 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.5mm | 40 | CY7C0241 | 100 | 5V | 5V | 72Kb 4K x 18 | 2 | 250mA | SRAM | Parallel | 4KX18 | 3-STATE | 18 | 25ns | 24b | 72 kb | 0.0015A | COMMON | Asynchronous | 18b | 2V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24C01CT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C01C | 8 | 5V | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 1.5ms | 1 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1.5ms | 200 | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MT46H32M32LFCM-6:A | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 32000000 | PLASTIC/EPOXY | BGA90,9X15,32 | 30 | 5.5 ns | 70 °C | 有 | MT46H32M32LFCM-6:A | 166 MHz | 33554432 words | 1.8 V | VFBGA | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.64 | BGA | YES | 90 | VFBGA, BGA90,9X15,32 | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | 不合格 | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 32MX32 | 3-STATE | 1 mm | 32 | 0.0006 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | 四库页面突发 | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M93C86-RMN3TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 2.5V | 1.27mm | M93C86 | 5.5V | Serial | 16Kb 2K x 8 1K x 16 | 2MHz | 200 ns | EEPROM | SPI | 1KX16 | 5ms | 16 kb | MICROWIRE | 4ms | 1.5mm | 5mm | 4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR24L64FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | BR24L64 | 8 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.775mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1470BV25-167BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2004 | NoBL™ | e1 | 活跃 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 2.375V~2.625V | BOTTOM | 260 | 1 | 2.5V | 1mm | 40 | CY7C1470 | 165 | 2.5V | 2.625V | 2.375V | 72Mb 2M x 36 | 4 | 400mA | 167MHz | 3.4ns | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 2.38V | 17mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 23LC512-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 23LC512 | 5.5V | 2.5V | 512Kb 64K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 8 | TS 16949 | SERIAL | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C141-25JC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | 0°C~70°C TA | Tube | 1997 | e0 | Obsolete | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn/Pb) | 中断标志 | 4.5V~5.5V | QUAD | 225 | 1 | 5V | 25GHz | 30 | CY7C141 | 52 | 5V | 5V | 8Kb 1K x 8 | 2 | 170mA | SRAM | Parallel | 1KX8 | 3-STATE | 25ns | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | YES | 3.68mm | 19.2mm | 19.2mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT24C256N-10SU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | Obsolete | 1 (Unlimited) | 2.7V~5.5V | AT24C256 | 256Kb 32K x 8 | 1MHz | 550ns | EEPROM | I2C | 10ms | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1399BN-12ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | 28 | Volatile | 0°C~70°C TA | Tray | 2006 | e4 | yes | 最后一次购买 | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.55mm | 12GHz | 20 | CY7C1399 | 28 | 3.3V | 3.6V | 3V | 256Kb 32K x 8 | 1 | 55mA | 55mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 12ns | 15b | 256 kb | 0.0005A | COMMON | Asynchronous | 8b | 3V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA86C-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 93AA86C | 8 | 5.5V | 2/5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 5ms | 16 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 950μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX29GL128EHT2I-90G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2014 | MX29GL | yes | 不用于新设计 | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | unknown | 未说明 | 56 | R-PDSO-G56 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX16 | 16 | 90ns | 128 Mb | 0.0001A | 90 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S16100C1-7TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | 50 | Volatile | 0°C~70°C TA | Tray | e3 | Obsolete | 3 (168 Hours) | 50 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 50 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 130mA | 143MHz | 5.5ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 12b | 16 Mb | 0.002A | COMMON | 4096 | 1.05mm | 21.05mm | 10.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M24C32-DRMF3TG/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-WFDFN Exposed Pad | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | M24C32 | R-PDSO-N8 | 5.5V | 1.8V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 4KX8 | 8 | 4ms | 32768 bit | I2C | 4ms | 0.8mm | 3mm | 2mm | ROHS3 Compliant |