类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | M93S66-WMN6T | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e0 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 锡铅 | 2.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M93S66 | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 256 x 16 | 2MHz | EEPROM | SPI | 256X16 | 3-STATE | 16 | 5ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1061G30-10ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 54 | 3A991.B.2.B | 8542.32.00.41 | 2.2V~3.6V | DUAL | 1 | 3V | 0.8mm | R-PDSO-G54 | 3.6V | 2.2V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | 1.2mm | 22.415mm | 10.16mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MB85RS512TPNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | 活跃 | 3 (168 Hours) | 1.8V~3.6V | 512Kb 64K x 8 | 30MHz | FRAM | SPI | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 47C04-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tube | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 512 X 8 BITS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 47C04 | R-PDSO-G8 | 5.5V | 4.5V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 512X8 | 8 | 1ms | 4096 bit | TS 16949 | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C00-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 24C00 | 8 | 5V | 5V | 2-Wire, I2C, Serial | 128b 16 x 8 | 2mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 4ms | 128 b | 0.000001A | I2C | 1000000 Write/Erase Cycles | 4ms | 200 | 1010XXXR | 5.33mm | 9.27mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL164K0XBHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | FL1-K | e1 | Obsolete | 3 (168 Hours) | 24 | 锡银铜 | ALSO CONFIGURABLE AS 64M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 25mA | 108MHz | FLASH | SPI - Quad I/O | 8b | 16MX4 | 4 | 3ms | 64 Mb | 0.000005A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 1.2mm | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C01D-XHM-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | ALSO COMPATIBLE WITH 2.5 V AT 1 MHZ | 1.7V~3.6V | DUAL | 260 | 1 | 1.8V | 0.65mm | 40 | AT24C01 | R-PDSO-G8 | 不合格 | 3.6V | 1.8/3.3V | 1.7V | 2-Wire, I2C, Serial | 1Kb 128 x 8 | SYNCHRONOUS | 1MHz | 4.5μs | EEPROM | I2C | 128X8 | 8 | 5ms | 1 kb | 4e-7A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1041CV33-20ZSXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tray | 1996 | e4 | yes | Discontinued | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 20 | CY7C1041 | 44 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 1 | 90mA | SRAM | Parallel | 3-STATE | 16 | 20ns | 18b | 4 Mb | 50MHz | 20 ns | COMMON | Asynchronous | 16b | 3V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C02CT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C02C | 8 | 5V | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 1.5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1.5ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C25652KV18-500BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C25652 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 1.21A | 500MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 72 Mb | 0.36A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1513KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1513 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 500mA | 250MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 20b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24LC025-I/STG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 256 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 85 °C | 有 | 24LC025-I/STG | 0.4 MHz | 256 words | 4.5 V | TSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.3 | SOIC | YES | 8 | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.003 mA | 256X8 | 1.2 mm | 8 | 0.000001 A | 2048 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | 1010DDDR | 4.4 mm | 3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC04BHT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24LC04BH | 8 | 不合格 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | 0.000005A | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43R16800E-6TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 66-TSSOP (0.400, 10.16mm Width) | 66 | Volatile | 0°C~70°C TA | Tray | e3 | 活跃 | 3 (168 Hours) | 66 | Tin (Sn) | AUTO/SELF REFRESH | 2.3V~2.7V | DUAL | 1 | 2.5V | 0.65mm | 2.5V | 2.7V | 2.3V | 128Mb 8M x 16 | 1 | 220mA | 166MHz | 700ps | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | 12ns | 14b | 128 Mb | 0.003A | COMMON | 4096 | 248 | 248 | 1.2mm | 22.22mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39SF010A-55-4I-WHE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 32-TFSOP (0.488, 12.40mm Width) | 32 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | SST39 MPF™ | e3 | yes | 活跃 | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | SST39SF010A | 32 | 5V | 5V | 1Mb 128K x 8 | 25mA | 55ns | FLASH | Parallel | 8b | 128KX8 | 8 | 20μs | 17b | 1 Mb | 0.0001A | Asynchronous | 8b | 5V | YES | YES | YES | 32 | 4K | 1.2mm | 12.4mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62146ELL-45ZSXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 30 | CY62146 | 5V | 5V | 4Mb 256K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 18b | 4 Mb | 0.000007A | 45 ns | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B104LA-BA25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | e1 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY14B104 | 48 | 3V | 3.6V | 2.7V | 4Mb 512K x 8 | 70mA | NVSRAM | Parallel | 8b | 512KX8 | 8 | 25ns | 4 Mb | 0.005A | 25 ns | 8b | 1.2mm | 10mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29AL008J70BFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | AL-J | 活跃 | 3 (168 Hours) | 48 | Tin/Copper/Silver (Sn/Cu/Ag) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | 3.6V | 33.3V | 2.7V | 8Mb 1M x 8 512K x 16 | 12mA | FLASH | Parallel | 8b | 512KX16 | 16 | 70ns | 8 Mb | 0.000005A | 70 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12115 | 16K8K32K64K | YES | BOTTOM | YES | 1mm | 8.15mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1311KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 突发架构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1311 | 1.8V | 1.9V | 1.7V | 18Mb 2M x 8 | 2 | 430mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 8 | 19b | 18 Mb | SEPARATE | Synchronous | 8b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C199-15VC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | YES | 28 | Volatile | 0°C~70°C TA | Tube | 2001 | e0 | no | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 4.5V~5.5V | DUAL | 220 | 1 | 5V | not_compliant | 15GHz | 未说明 | CY7C199 | 28 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 1 | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 15ns | 15b | 256 kb | COMMON | YES | 3.556mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29W320DB70N6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold, Tin | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | 48-TSOP | Non-Volatile | -40°C~85°C TA | Tray | 2008 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | M29W320 | 2.7V | Parallel | 3.6V | 2.7V | 32Mb 4M x 8 2M x 16 | 10mA | 70ns | FLASH | Parallel | 70ns | 32 Mb | Asynchronous | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56BT-I/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 8542.32.00.51 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 93C56B | 6 | 5V | 5V | I2C, Serial | 2Kb 128 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.3mm | 3.1mm | 1.8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46C-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C46C | 8 | 5V | 5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA65/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | 0°C~70°C TA | Tube | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~6V | DUAL | 1 | 5V | 2.54mm | 24AA65 | 8 | 1.8V | 6V | 2/5V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 5ms | 64 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1010DDDR | 4.953mm | 10.16mm | 7.112mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1329H-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | 657.000198mg | Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.15V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1329 | 100 | 3.3V | 3.6V | 3.135V | 2Mb 64K x 32 | 4 | 225mA | 40mA | 133MHz | 4ns | SRAM | Parallel | 3-STATE | 32 | 16b | 2 Mb | COMMON | Synchronous | 32b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 |