类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 24LC32A-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC32A | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | S29AL016J70TFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | AL-J | e3 | 活跃 | 3 (168 Hours) | 48 | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 不合格 | 3V | 3.6V | 2.7V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 8b | 1MX16 | 16 | 70ns | 20b | 16 Mb | 0.000005A | 70 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
 | 24AA256T/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24AA256 | 8 | 5.5V | 2/5V | I2C, Serial | 256Kb 32K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 256 kb | 0.000001A | I2C | 100000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 2.03mm | 5.207mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | IS64WV25616EDBLL-10CTLA3 | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~125°C TA | Tray | 活跃 | 3 (168 Hours) | 44 | 2.4V~3.6V | DUAL | 1 | 3V | 0.8mm | 44 | 3.6V | 2.5/3.3V | 2.4V | 4Mb 256K x 16 | 1 | 50mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC025T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24LC025 | 8 | 5.5V | 2.2/5.5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 10ms | 200 | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | CY7C1370D-250AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2011 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1370 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 350mA | 250MHz | 2.6ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | 11LC020-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 11LC020 | 8 | 5V | Serial | 2Kb 256 x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 2 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 4.953mm | 10.16mm | 7.112mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 11LC040-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 11LC040 | 8 | 5V | Serial | 4Kb 512 x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 4 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 4.953mm | 10.16mm | 7.112mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128S90FHI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | 3.6V | 3/3.3V | 2.7V | 128Mb 8M x 16 | 60mA | 90ns | FLASH | Parallel | 8MX16 | 16 | 60ns | 23b | 128 Mb | 0.0001A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 64K | 32B | YES | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| 24C00-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24C00 | 8 | 5V | 5V | 2-Wire, I2C, Serial | 128b 16 x 8 | 2mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 4ms | 128 b | 0.000001A | I2C | 1000000 Write/Erase Cycles | 4ms | 200 | 1010XXXR | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| 25C320T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2001 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1M ENDURANCE CYCLE; 200 YEARS DATA RETENTION | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25C320 | 8 | 5V | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T32NUX-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 0.5mm | 未说明 | BR24T32 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 0.6mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC76CT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 93LC76C | 8 | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2663KV18-550BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 40 | CY7C2663 | 165 | 1.8V | 1.9V | 1.7V | 144Mb 8M x 18 | 2 | 550MHz | 450 ps | SRAM | Parallel | 8MX18 | 3-STATE | 18 | 21b | 144 Mb | 0.5A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1512KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1512 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 650mA | 250MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 21b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
| 25LC640A-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 25LC640A | 8 | 5V | SPI, Serial | 64Kb 8K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 64 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV93C66VE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Automotive grade | ACTIVE (Last Updated: 1 week ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 8 | 5.5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 256X16 | 16 | 4 kb | MICROWIRE | 8 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC01BT/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24LC01B | 8 | 5.5V | 3/5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 3500ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.00003A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | BR24T64FVT-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 0.65mm | 未说明 | BR24T64 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| CY7C1550KV18-400BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1550 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 750mA | 400MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 20b | 72 Mb | 0.32A | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1350G-133AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 1998 | NoBL™ | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 250 | 1 | 3.3V | 0.65mm | 40 | CY7C1350 | 100 | 3.3V | 3.6V | 3.135V | 4.5Mb 128K x 36 | 4 | 225mA | 133MHz | 4ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | AT27C040-90JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2017 | e3 | 活跃 | 2 (1 Year) | 32 | Matte Tin (Sn) - annealed | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PQCC-J32 | 5.5V | 4.5V | 4Mb 512K x 8 | ASYNCHRONOUS | 90ns | EPROM | Parallel | 512KX8 | 8 | 4194304 bit | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S34ML04G100TFI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | ML-1 | e3 | Discontinued | 3 (168 Hours) | 48 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 33MHz | 3.3V | 3.6V | 2.7V | 4Gb 512M x 8 | 30mA | 20 ns | FLASH | Parallel | 8b | 512MX8 | 25ns | 30b | 4 Gb | 0.00005A | Asynchronous | 8b | 3V | NO | NO | YES | 4K | 128K | 2kB | YES | 85°C | 1.2mm | 18.5mm | 12.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | S29GL512S11TFIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-S | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 1.65V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 512Mb 32M x 16 | 60mA | 110ns | FLASH | Parallel | 16b | 64MX8 | 8 | 60ns | 25b | 512 Mb | 0.0001A | Asynchronous | 16b | 2.7V | YES | YES | YES | 512 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| S29GL064N90TFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | 56-TSOP | Non-Volatile | -40°C~85°C TA | Tray | 2008 | GL-N | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | Parallel | 3.6V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | 90ns | FLASH | Parallel | 16b | 90ns | 64 Mb | Asynchronous | 1.05mm | 18.5mm | 14.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |