类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | S29GL032N90BFI030 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2008 | GL-N | e1 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 16b | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 863 | 8K64K | 8/16words | YES | TOP | YES | 1mm | 8.15mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | 25LC010AT-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8542.32.00.51 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 25LC010A | 6 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 128X8 | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | 1.45mm | 2.9mm | 1.55mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA024H-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 1.8V | 0.65mm | 40 | 24AA024H | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 2 kb | I2C | 5ms | 1mm | 3mm | 4.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29GL320EBTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | MX29GL | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin (Sn) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 | ASYNCHRONOUS | FLASH | Parallel | 2MX16 | 16 | 70ns | 32 Mb | 0.0001A | 70 ns | 3V | 8 | YES | YES | YES | 863 | 8K64K | 8/16words | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | MX25L1006EMI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2009 | MX25xxx05/06 | e3 | 不用于新设计 | 3 (168 Hours) | 8 | MATTE TIN (800) | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 40 | R-PDSO-G8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 512KX2 | 2 | 50μs, 3ms | 1 Mb | 0.00001A | 2.7V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS128SAGMFI100 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TA | Tray | 2013 | FS-S | e3 | 活跃 | 3 (168 Hours) | 8 | 1.7V~2V | DUAL | 260 | 1 | 1.8V | 1.27mm | 30 | 1.8V | 2V | 1.7V | SPI, Serial | 128Mb 16M x 8 | 65mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O, QPI | 8b | 32MX4 | 4 | 128 Mb | 2 | 2.159mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST38VF6402-90-5I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST38 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST38VF6402 | 48 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 18mA | 90ns | FLASH | Parallel | 16b | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00003A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 4K | 4words | YES | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | SST39SF020A-55-4I-NHE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | SST39 MPF™ | e3 | yes | 活跃 | 2 (1 Year) | 32 | 3A991.B.1.A | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 245 | 1 | 5V | 1.27mm | 40 | SST39SF020A | 32 | 5V | 5V | 2Mb 256K x 8 | 25mA | 55ns | FLASH | Parallel | 8b | 256KX8 | 8 | 20μs | 18b | 2 Mb | 0.0001A | Asynchronous | 8b | 5V | YES | YES | YES | 64 | 4K | 3.556mm | 13.97mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1370D-200BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2011 | NoBL™ | e0 | no | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.6V | BOTTOM | 220 | 1 | 3.3V | 1mm | CY7C1370 | 165 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 300mA | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 15mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G128FVT-3GE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | BR24G128 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1019CV33-10ZXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Automotive grade | 表面贴装 | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | 2002 | e3 | yes | Obsolete | 3 (168 Hours) | 32 | Matte Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 30 | CY7C1019 | 32 | 3.3V | 3.63V | 2.97V | 1Mb 128K x 8 | 1 | 80mA | SRAM | Parallel | 3-STATE | 8 | 10ns | 17b | 1 Mb | 0.005A | 100MHz | COMMON | Asynchronous | 8b | 2V | 20.95mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 47L16-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tube | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 47L16 | R-PDSO-G8 | 3.6V | 2.7V | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 2KX8 | 8 | 1ms | 16384 bit | TS 16949 | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | N25Q512A13GSF40G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2012 | yes | Obsolete | 3 (168 Hours) | 16 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | N25Q512 | 3V | 2.7V | SPI, Serial | 512Mb 128M x 4 | 20mA | 108MHz | 5 ns | FLASH | SPI | 64MX8 | 8ms, 5ms | 1b | 512 Mb | 0.0005A | Synchronous | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 2.5mm | 10.3mm | 7.5mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M93S46-WMN6T | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | M93S46 | 8 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 64 x 16 | 2MHz | 2 μs | EEPROM | SPI | 64X16 | 16 | 5ms | 1 kb | 0.00001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC160T-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 11LC160 | 8 | 5V | Serial | 16Kb 2K x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25640A-10TU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 20MHz | AT25640 | 5V | SPI, Serial | 5.5V | 2.7V | 64Kb 8K x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 64 kb | 10MHz | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25WF010-40-5I-SAF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | SST25 | e4 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 镍钯金 | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | SST25WF010-40 | 8 | 1.8V | 1.95V | 1.65V | SPI, Serial | 1Mb 128K x 8 | 10mA | 40MHz | 9 ns | FLASH | SPI | 8b | 8 | 60μs | 1b | 1 Mb | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| 25LC320AT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AT24MAC402-XHM-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | Non-Volatile | -40°C~85°C TA | Tube | 2011 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | AT24MAC402 | R-PDSO-G8 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 256X8 | 8 | 5ms | 2 kb | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512S10DHI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | 64-FBGA (9x9) | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-S | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | Parallel | 3.6V | 2.7V | 512Mb 32M x 16 | 60mA | 100ns | FLASH | Parallel | 16b | 60ns | 25b | 512 Mb | Asynchronous | 16b | 32B | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24VL014HT/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -20°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 1.5V~3.6V | DUAL | 260 | 1 | 1.8V | 0.5mm | 40 | 24VL014H | 8 | 3.3V | 3.6V | 1.5V | 2-Wire, I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 730μm | 2mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| 93AA66B-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 93AA66B | 8 | 5.5V | 2/5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF020-20-4C-QAE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2010 | SST25 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST25VF020 | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 2Mb 256K x 8 | 10mA | 20MHz | 20 ns | FLASH | SPI | 8b | 2MX1 | 1 | 20μs | 18b | 2 Mb | 0.000015A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
| 24VL014/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -20°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 1.5V~3.6V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | 24VL014 | 8 | 不合格 | 3.3V | 3.6V | 1.5V | I2C, Serial | 1Kb 128 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.25mm | 4.9mm | 3.9mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | BR24G64NUX-3TTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | BR24G64 | R-PDSO-N8 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8KX8 | 8 | 5ms | 64 kb | I2C | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant |