类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 逻辑功能 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 时间格式 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | 24AA025E48T-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 6 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | e3 | 活跃 | 1 (Unlimited) | 5 | 100KHZ AVAILABLE @1.7V | 1.7V~5.5V | DUAL | 1 | 5V | 0.95mm | 24AA025E48 | R-PDSO-G5 | 不合格 | 5.5V | 1.8/5V | 2.5V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 0.000005A | 2048 bit | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | 10100DDR | 1.45mm | 2.9mm | 1.55mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC56C-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93LC56C | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B101Q2-LHXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2008 | e4 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | CY14B101 | 8 | 3V | 3.6V | 2.7V | SPI, Serial | 1Mb 128K x 8 | 10mA | 40MHz | 9 ns | Clock | NVSRAM | SPI | 8b | 8 | 1 Mb | 0.005A | 8b | HH:MM:SS | 6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C04-FMC6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-UFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 1 | 2.5V | 0.5mm | M24C04 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4 kb | I2C | 5ms | 0.6mm | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC010AT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C08-RMB6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 镍钯金 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 30 | M24C08 | 8 | 不合格 | 5V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | 800μA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DMMR | 530μm | 2mm | 3mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1313KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1313 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 440mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 18b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS64WV25616BLL-10CTLA3-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 44 | 2.4V~3.6V | DUAL | 0.8mm | 2.5/3.3V | 4Mb 256K x 16 | 1 | 65mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT24C44VI-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2006 | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 1W | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | CAT24C44 | 8 | 不合格 | 5V | 5V | Serial | 256b 16 x 16 | 3mA | SYNCHRONOUS | 1MHz | 1.5 μs | NVSRAM | SPI | 16b | 16X16 | 16 | 256 b | 0.00003A | 16b | 1.75mm | 4.9mm | Unknown | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29LV640EBTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2010 | MX29LV | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 2.7V | 64Mb 8M x 8 | ASYNCHRONOUS | FLASH | Parallel | 4MX16 | 16 | 70ns | 64 Mb | 70 ns | 3V | 8 | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B101LA-SZ25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 32-SOIC (0.295, 7.50mm Width) | 32 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | CY14B101 | 32 | 3V | 3.6V | 2.7V | 1Mb 128K x 8 | 70mA | NVSRAM | Parallel | 16b | 128KX8 | 8 | 25ns | 1 Mb | 0.005A | 25 ns | 8b | 2.54mm | 20.726mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62167EV18LL-55BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.65V~2.25V | BOTTOM | 260 | 1 | 1.8V | 0.75mm | 30 | CY62167 | 不合格 | 1.8V | 2.25V | 16Mb 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 20b | 16 Mb | 55 ns | COMMON | Asynchronous | 16b | 1V | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1570KV18-450BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1570 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 820mA | 450MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 20b | 72 Mb | 0.34A | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128N11TFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-N | e3 | 活跃 | 3 (168 Hours) | 56 | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | 3.6V | 2.7V | 128Mb 16M x 8 8M x 16 | 90mA | FLASH | Parallel | 8MX16 | 16 | 110ns | 128 Mb | 110 ns | Asynchronous | 3V | 8 | 1.2mm | 18.4mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256F-15SU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | 4.5V~5.5V | DUAL | 250 | 1 | 5V | 1.27mm | 150GHz | 40 | AT28C256 | 5V | 5V | Parallel, SPI | 256Kb 32K x 8 | 50mA | 150ns | EEPROM | Parallel | 32KX8 | 8 | 3ms | 256 kb | 0.0002A | 5V | 10000 Write/Erase Cycles | 3ms | 10 | HARDWARE/SOFTWARE | YES | YES | 64words | 2.65mm | 17.9mm | 7.5mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24LC00T-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | 16 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 85 °C | 有 | 24LC00T-I/SNG | 0.4 MHz | 16 words | 5 V | SOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.46 | SOIC | YES | 8 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | e3 | 有 | Matte Tin (Sn) | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.003 mA | 16X8 | 1.75 mm | 8 | 0.000001 A | 128 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 4 ms | 200 | 1010XXXR | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGNFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | FL-S | 活跃 | 3 (168 Hours) | 8 | IT ALSO CONFIGURED AS 256M X 1 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 133MHz | 0.1mA | 8 ns | FLASH | SPI - Quad I/O | 32MX4 | 4 | 1b | 128 Mb | 0.0001A | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C512-90B6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | Non-Volatile | -40°C~85°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | unknown | 90GHz | 未说明 | M27C512 | 28 | 不合格 | 5V | 5V | 7V | 512Kb 64K x 8 | 50mA | ASYNCHRONOUS | 90ns | EPROM | Parallel | 64KX8 | 3-STATE | 512 kb | 0.0001A | COMMON | 3.81mm | 36.83mm | 13.72mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF032B-104I/TD | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 24-TBGA | 24 | 24-TBGA (6x8) | Non-Volatile | -40°C~85°C TA | Tray | 2013 | SST26 SQI® | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | 104MHz | SST26VF032 | 3V | SPI, Serial | 3.6V | 2.7V | 32Mb 4M x 8 | 104MHz | 9.6 ns | FLASH | SPI - Quad I/O | 1.5ms | 32 Mb | 256B | 850μm | 8mm | 6mm | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA040A-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 不适用 | 8 | 通孔 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 1.8V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 25AA040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.953mm | 10.16mm | 7.112mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256E-15LM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 表面贴装 | 表面贴装 | 32-CLCC | 32 | Non-Volatile | -55°C~125°C TC | Tube | 1997 | e0 | no | 活跃 | 3 (168 Hours) | 32 | Tin/Lead (Sn/Pb) | 自动写入 | 4.5V~5.5V | QUAD | 225 | 1 | 5V | 1.27mm | 150GHz | 30 | AT28C256 | 不合格 | 5V | 5V | Parallel, SPI | 256Kb 32K x 8 | 50mA | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 3-STATE | 8 | 10ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | 64words | 2.54mm | 13.97mm | 11.43mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61C1024AL-12TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | 32 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 10 | 32 | 5V | 5V | 1Mb 128K x 8 | 1 | 40mA | SRAM | Parallel | 3-STATE | 8 | 12ns | 17b | 1 Mb | 0.00045A | COMMON | Asynchronous | 8b | 2V | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128P90FFIR10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-P | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3.3V | 1mm | 40 | 3.6V | 3.3V | 3V | 128Mb 16M x 8 | 110mA | FLASH | Parallel | 8b | 128MX1 | 1 | 90ns | 128 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC66BT-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.95mm | 40 | 93LC66B | 6 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 1.45mm | 2.95mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC66-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 不适用 | 8 | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 93LC66 | 8 | 6V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 3mA | 2MHz | 2 μs | EEPROM | SPI | 3-STATE | 8 | 10ms | 4 kb | 0.00003A | MICROWIRE | 10000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 16 | 4.064mm | 9.9695mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 |