类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||
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 | N25S830HAS22IT | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Volatile | -40°C~85°C TA | Tray | 2000 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 2.7V~3.6V | DUAL | 1 | 3V | N25S830HA | 8 | 3V | 3.6V | 2.7V | SPI, Serial | 256Kb 32K x 8 | 1 | 10mA | 20MHz | 25 ns | SRAM | SPI | 3-STATE | 8 | 1b | 256 kb | 0.000004A | SEPARATE | Synchronous | 8b | 2.7V | 4.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF032B-104V/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~105°C TA | Tube | 2016 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | Matte Tin (Sn) - annealed | 2.7V~3.6V | 260 | 40 | SST26VF032 | SPI, Serial | 32Mb 4M x 8 | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | 32 Mb | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC08BH-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC08BH | 8 | 不合格 | 5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25C320T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25C320 | 8 | 5V | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA04-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 0.5mm | 40 | 24AA04 | 8 | 5V | 1.7V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXMR | NO | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LE25W81QES00-AH-1 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -20°C~70°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | OPERATING TEMP FOR WRITE OPERATION 0 TO 70 | 2.45V~3.6V | DUAL | 未说明 | 1 | 2.6V | 1.27mm | 未说明 | 2.6V | 3.6V | 2.45V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 30MHz | FLASH | SPI | 8 | 1ms | 8 Mb | 3V | 256B | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC128-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.65mm | 40 | 24LC128 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 128Kb 16K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 128 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.05mm | 4.5mm | 3.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT34C04-SS5M-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -20°C~125°C TA | Tape & Reel (TR) | 2012 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 2V | 1.27mm | 40 | AT34C04 | 不合格 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | EEPROM | I2C | 4KX1 | 1 | 5ms | 4 kb | 0.000003A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | SOFTWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24AA00T-I/OTG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROHS COMPLIANT, PLASTIC, SOT-23, 5 PIN | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | 1 | 16 | PLASTIC/EPOXY | TSOP5/6,.11,37 | -40 °C | 40 | 85 °C | 有 | 24AA00T-I/OTG | 0.4 MHz | 16 words | 2.5 V | LSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | SOT-23 | 1.43 | 表面贴装 | YES | 5 | 5 | Compliant | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.95 mm | compliant | 400 kHz | 5 | R-PDSO-G5 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.7 V | 2-Wire, I2C, Serial | 5.5 V | 1.8 V | 16 B | 3 mA | SYNCHRONOUS | 0.003 mA | 900 ns | 16X8 | 1.45 mm | 8 | 128 b | 0.000001 A | 128 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 4 ms | 200 | 1010XXXR | 2.9 mm | 1.5 mm | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC1024T-I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC1024 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 1Mb 128K x 8 | 10mA | 20MHz | 50 ns | EEPROM | SPI | 8 | 6ms | 1 Mb | 0.000001A | SPI | 100000 Write/Erase Cycles | 6ms | HARDWARE/SOFTWARE | 1mm | 6mm | 5mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT41K1G8SN-125:A | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 78-TFBGA | 78 | Volatile | 0°C~95°C TC | Tray | 2015 | Obsolete | 3 (168 Hours) | 78 | EAR99 | AUTO/SELF REFRESH | 1.283V~1.45V | BOTTOM | 未说明 | 1 | 1.35V | 0.8mm | 未说明 | 1.35V | 1.45V | 1.283V | 8Gb 1G x 8 | 1 | SYNCHRONOUS | 800MHz | 13.75ns | DRAM | Parallel | 8b | 1GX8 | 8 | 16b | 8 Gb | 1.2mm | 13.2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512S10DHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | GL-S | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 512Mb 32M x 16 | 60mA | 100ns | FLASH | Parallel | 16b | 8 | 60ns | 25b | 512 Mb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 512 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11AA02E64T-I/TT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Automotive grade | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e3 | 活跃 | 1 (Unlimited) | 3 | Matte Tin (Sn) - annealed | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.95mm | 40 | 11AA02E64 | 5.5V | 1.8V | Serial | 2Kb 256 x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 5ms | 2 kb | TS 16949 | SPI | 5ms | 1.02mm | 3.05mm | 1.4mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA64-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | 活跃 | 1 (Unlimited) | 1.7V~5.5V | 260 | 40 | 24AA64 | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 64 kb | I2C | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM28V020-T28G | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | 28 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | F-RAM™ | e4 | 最后一次购买 | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.71 | 2V~3.6V | DUAL | 260 | 1 | 3.3V | 0.55mm | 20 | FM28V020 | 28 | 不合格 | 3.3V | 3.6V | 2V | 256Kb 32K x 8 | SYNCHRONOUS | FRAM | Parallel | 32KX8 | 8 | 140ns | 0.00015A | 262144 bit | 140 ns | 1.2mm | 11.8mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT93C66A-10PU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 不适用 | 85°C | -40°C | 2.7V~5.5V | 2MHz | AT93C66A | 5V | Serial | 5.5V | 2.7V | 4Kb 512 x 8 256 x 16 | 2mA | 2MHz | 2 μs | EEPROM | SPI | 10ms | 4 kb | 1MHz | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC64B-90JU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | 活跃 | 2 (1 Year) | 32 | 4.5V~5.5V | QUAD | 245 | 1 | 5V | 1.27mm | 90GHz | 40 | AT28HC64 | 5V | 5V | Parallel, SPI | 64Kb 8K x 8 | 40mA | 90ns | EEPROM | Parallel | 8KX8 | 8 | 10ms | 64 kb | 0.0001A | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | 64words | 3.556mm | 13.97mm | 11.43mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC160D-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 47C16-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2014 | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 47C16 | R-PDSO-G8 | 5.5V | 4.5V | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 2KX8 | 8 | 1ms | 16384 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC014-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 24LC014 | 8 | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 950μm | 2mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62C1024AL-35QLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 40 | 32 | 5V | 1Mb 128K x 8 | 1 | 30mA | SRAM | Parallel | 8 | 35ns | 17b | 1 Mb | 35 ns | Asynchronous | 8b | 3mm | 20.445mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT27C4096-90JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 Weeks | 表面贴装 | 44-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2017 | e3 | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 未说明 | S-PQCC-J44 | 5.5V | 4.5V | 4Mb 256K x 16 | ASYNCHRONOUS | 90ns | EPROM | Parallel | 256KX16 | 16 | 4194304 bit | 4.572mm | 16.586mm | 16.586mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61NLP25636A-200TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | YES | 100 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 流水线结构 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | 3.3V | 3.135V | 9Mb 256K x 36 | 4 | 280mA | 200MHz | 3.1ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BRCC064GWZ-3E2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 6-XFBGA, CSPBGA | 6 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2013 | 活跃 | 1 (Unlimited) | 6 | 1.6V~5.5V | BOTTOM | 未说明 | 1 | 0.4mm | 未说明 | 5.5V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8KX8 | 8 | 5ms | 64 kb | I2C | 5ms | 1.5mm | 1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC16BH-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24LC16BH | 8 | 5V | 1.7V | I2C, Serial | 16Kb 2K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant |