类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | MX25U25635FMI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | MX25xxx35/36 - MXSMIO™ | 不用于新设计 | 3 (168 Hours) | 16 | 1.65V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | unknown | 未说明 | 16 | 不合格 | 2V | 2V | 1.8V | 1.65V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI | 64MX4 | 4 | 30μs, 3ms | 256 Mb | 0.00002A | 1.8V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | 7.52mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C02BN-SH-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | Obsolete | 1 (Unlimited) | 1.8V~5.5V | AT24C02 | 2Kb 256 x 8 | 1MHz | 550ns | EEPROM | I2C | 5ms | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G512FVT-3AGE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 未说明 | 1 | 0.65mm | 未说明 | BR24G512 | 不合格 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000003A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA16H-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 24AA16H | 8 | 5V | 1.7V | I2C, Serial | 16Kb 2K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA025E64-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 100KHZ AVAILABLE @1.7V | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24AA025E64 | 5.5V | 2.5V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 2 kb | 0.000001A | TS 16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | 1010DDDR | 1.5mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AT25128AN-10SU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 20MHz | AT25128 | 5V | SPI, Serial | 5.5V | 2.7V | 128Kb 16K x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 128 kb | 10MHz | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA014T-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA014 | 8 | 5.5V | 2/5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | M28W160CB70N6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 1998 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | M28W160 | 48 | 3/3.3V | 2.7V | 16Mb 1M x 16 | 20mA | FLASH | Parallel | 1MX16 | 16 | 70ns | 20b | 16 Mb | 0.000006A | 70 ns | Asynchronous | 16b | NO | NO | YES | 831 | 4K32K | BOTTOM | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC640AT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC640A | 8 | 5V | SPI, Serial | 64Kb 8K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 64 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1061GN30-10ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 54 | 3A991.B.2.A | Matte Tin (Sn) | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | R-PDSO-G54 | 3.6V | 2.2V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | 1.2mm | 22.415mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25L04B-G | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2011 | F-RAM™ | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 30 | FM25L04 | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Kb 512 x 8 | 3mA | 20MHz | 20 ns | FRAM | SPI | 8b | 4 kb | 0.000006A | 8b | 1.478mm | 4.98mm | 3.987mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LCS52/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000K ERASE/WRITE CYCLES; HARDWARE WRITE PROTECT; DATA RETENTION > 200 YEARS | 2.2V~5.5V | DUAL | 260 | 1 | 2.5V | 0.635mm | 40 | 24LCS52 | 8 | 5.5V | 3/5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.00003A | I2C | 1000000 Write/Erase Cycles | 10ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC040XT/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25LC040 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 2MHz | 230 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46B-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C46B | 8 | 5V | 5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | CYDM256B16-55BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-VFBGA | 100 | Volatile | -40°C~85°C TA | Tray | 1996 | e1 | yes | Obsolete | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V 2.4V~2.6V 2.7V~3.3V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 30 | CYDM | 100 | 1.8V | 1.9V | 1.8/3V | 1.7V | 256Kb 16K x 16 | 2 | 25mA | SRAM | Parallel | 16KX16 | 3-STATE | 16 | 55ns | 28b | 256 kb | 0.000006A | 55 ns | COMMON | Asynchronous | 16b | 1.7V | 1mm | 6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C02CT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 24C02C | 8 | 不合格 | 5V | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 100kHz | 3500ns | EEPROM | I2C | 1.5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1.5ms | 200 | HARDWARE | 1010DDDR | 730μm | 2mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62256NLL-55SNXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2002 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 55GHz | 30 | CY62256 | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 50mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 55ns | 15b | 256 kb | 55 ns | COMMON | Asynchronous | 8b | 2V | 2.794mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | M93C66-MN6T | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M93C66 | 8 | 5.5V | 5V | 4.5V | Serial | 4Kb 512 x 8 256 x 16 | 2MHz | 1 μs | EEPROM | SPI | 256X16 | 3-STATE | 16 | 5ms | 4 kb | 0.000015A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV5128BLL-55T2LI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 2.5V~3.6V | DUAL | 260 | 1 | 2.8V | 40 | 32 | 3.3V | 3.6V | 2.5V | 4Mb 512K x 8 | 1 | 45mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 55 ns | COMMON | Asynchronous | 8b | 20.95mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B116L-ZS25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | Gold | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.B | 8542.32.00.41 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.8mm | 未说明 | 3.6V | 2.7V | 16Mb 2M x 8 | 95mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 2MX8 | 8 | 25ns | 16 Mb | 25 ns | 8b | 1.194mm | 18.415mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | N25Q128A11ESE40G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | yes | Obsolete | 3 (168 Hours) | 8 | 1.7V~2V | DUAL | 260 | 1 | 1.8V | 1.27mm | 30 | N25Q128 | 不合格 | 1.8V | 1.7V | SPI, Serial | 128Mb 32M x 4 | 20mA | 108MHz | 7 ns | FLASH | SPI | 8ms, 5ms | 1b | 128 Mb | 0.00001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.91mm | 5.49mm | 5.49mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C028V-15AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 2004 | e4 | yes | Obsolete | 3 (168 Hours) | 100 | Nickel/Palladium/Gold (Ni/Pd/Au) | AUTOMATIC POWER-DOWN | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.5mm | 15GHz | 20 | CY7C028 | 100 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 2 | SRAM | Parallel | 64KX16 | 3-STATE | 16 | 15ns | 16b | 1 Mb | 0.00005A | 15 ns | COMMON | Asynchronous | 16b | 2V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128P90TFIR10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-P | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 不合格 | 3.6V | 3.3V | 3V | 128Mb 16M x 8 | ASYNCHRONOUS | 0.11mA | FLASH | Parallel | 128MX1 | 1 | 90ns | 128 Mb | 0.000005A | 90 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | M25P64-VMF6P | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | yes | Obsolete | 3 (168 Hours) | 16 | SMD/SMT | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M25P64 | 16 | 3.3V | 2.7V | 64Mb 8M x 8 | 8mA | 50MHz | 8 ns | FLASH | SPI | 8MX8 | 8 | 15ms, 5ms | 23b | 64 Mb | 0.0001A | SERIAL | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 15ms | 20 | HARDWARE/SOFTWARE | 256B | 85°C | 2.65mm | 10.3mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1318KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1318 | 165 | 1.8V | 18Mb 1M x 18 | 1 | 380mA | 250MHz | 450 ps | SRAM | Parallel | 18 | 20b | 18 Mb | Synchronous | 18b | 无 | ROHS3 Compliant |