类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||||||
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.png) | CY62157EV30LL-45BVXITNOVATECH | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29GL128FHT2I-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | MX29GL | e3 | 活跃 | 3 (168 Hours) | 56 | 哑光锡 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | R-PDSO-G56 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | ASYNCHRONOUS | FLASH | Parallel | 8MX16 | 16 | 70ns | 128 Mb | 0.00003A | 70 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021CV33-15ZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 1996 | e4 | Obsolete | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | unknown | 15GHz | 20 | CY7C1021 | 44 | 不合格 | 3.3V | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 80mA | SRAM | Parallel | 3-STATE | 16 | 15ns | 16b | 1 Mb | 0.005A | COMMON | Asynchronous | 16b | 3V | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF801C-70-4I-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 0.5mm | 5MHz | 40 | SST39VF801C | 48 | 3.3V | 3.6V | 2.7V | 8Mb 512K x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | BOTTOM | YES | 530μm | 6mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| X28C513J-12 | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 64000 | PLASTIC/EPOXY | 120 ns | 70 °C | X28C513J-12 | 65536 words | 5 V | QCCJ | RECTANGULAR | Rochester Electronics LLC | 活跃 | ROCHESTER ELECTRONICS LLC | 5.7 | YES | 32 | QCCJ, | CMOS | QUAD | J BEND | 1 | 1.27 mm | unknown | R-PQCC-J32 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 64KX8 | 3.56 mm | 8 | 524288 bit | PARALLEL | EEPROM | 5 V | 10 ms | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95320-DRMN8TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 1.27mm | 未说明 | M95320 | 不合格 | 5.5V | 2/5V | SPI, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 8 | 4ms | 0.000001A | SPI | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C38098A-10TIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP2 | Volatile | -40°C~85°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 85°C | -40°C | 3V~3.6V | 1MHz | 3.3V | Parallel | 3.6V | 2.7V | 8Mb 512K x 16 | 1 | 10ns | SRAM | Parallel | 10ns | 19b | 8 Mb | 1.05mm | 18.62mm | 10.363mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16160D-7BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | -40°C~85°C TA | Tray | e1 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 40 | 54 | 3.3V | 3.6V | 3V | 256Mb 16M x 16 | 1 | 130mA | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 15b | 256 Mb | 0.003A | COMMON | 8192 | 800μm | 13.1mm | 8.1mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C027V-25AI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100-LQFP | YES | Volatile | -40°C~85°C TA | Tray | 2003 | e0 | Obsolete | 2 (1 Year) | 100 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 3V~3.6V | QUAD | 235 | 1 | 3.3V | 0.5mm | not_compliant | 未说明 | CY7C027 | 100 | S-PQFP-G100 | 不合格 | 3.6V | 3.3V | 3V | 512Kb 32K x 16 | 2 | 0.185mA | SRAM | Parallel | 32KX16 | 3-STATE | 16 | 25ns | 0.0001A | 524288 bit | 25 ns | COMMON | 3V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S70KS1281DPBHV020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-VBGA | YES | Volatile | -40°C~105°C TA | Tray | HyperRAM™ KS | 活跃 | 3 (168 Hours) | 24 | 8542.32.00.71 | 1.7V~1.95V | BOTTOM | 未说明 | 1 | 1.8V | 1mm | 未说明 | R-PBGA-B24 | 1.95V | 1.7V | 128Mb 16M x 8 | SYNCHRONOUS | 166MHz | 36ns | PSRAM | Parallel | 16MX8 | 8 | 134217728 bit | 1mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGBHM200 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | Non-Volatile | -40°C~125°C TA | Tray | Automotive, AEC-Q100, FL-S | 活跃 | 3 (168 Hours) | 24 | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | R-PBGA-B24 | 3.6V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 32MX4 | 4 | 134217728 bit | SERIAL | 3V | 500ms | 2 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV2568EDBLL-10KLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | YES | 36 | Volatile | -40°C~85°C TA | Tube | e1 | 活跃 | 3 (168 Hours) | 36 | 锡银铜 | 流水线结构 | 2.4V~3.6V | DUAL | 260 | 1 | 3.3V | 10 | 36 | 3.6V | 2.5/3.3V | 2.4V | 2Mb 256K x 8 | 1 | 35mA | SRAM | Parallel | 256KX8 | 3-STATE | 8 | 10ns | 18b | 2 Mb | 0.006A | COMMON | Asynchronous | 8b | 2V | 3.76mm | 23.49mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62146G-45ZSXAT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | MoBL® | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | 8542.32.00.41 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.8mm | 未说明 | R-PDSO-G44 | 5.5V | 4.5V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 45ns | 4194304 bit | 45 ns | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62147G30-55ZSXET | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | MoBL® | 活跃 | 3 (168 Hours) | 125°C | -40°C | 2.2V~3.6V | Parallel | 4Mb 256K x 16 | 55ns | SRAM | Parallel | 55ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93L86-W | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3/e2 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | TIN/TIN COPPER | 8542.32.00.51 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 2.54mm | 10 | BR93L86 | 8 | R-PDIP-T8 | 不合格 | 5.5V | 2/5V | 1.8V | Serial | 16Kb 1K x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 1KX16 | 16 | 5ms | 0.000002A | 16384 bit | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 3.7mm | 9.3mm | 7.62mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF064BAT-104I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Automotive grade | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | SST26VF064 | 3V | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 64 Mb | TS 16949 | 3V | 256B | BOTTOM/TOP | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT24C08A-10TU-2.7 | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4.40 MM, GREEN, PLASTIC, MO-153AA, TSSOP-8 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 1000 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 85 °C | 有 | AT24C08A-10TU-2.7 | 0.4 MHz | 1024 words | 3 V | TSSOP | RECTANGULAR | Atmel Corporation | Obsolete | ATMEL CORP | 8.47 | TSSOP | 表面贴装 | YES | 8 | 8 | Compliant | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | unknown | 400 kHz | 8 | R-PDSO-G8 | 不合格 | 5 V | 5.5 V | 3/5 V | INDUSTRIAL | 2.7 V | 2-Wire, Serial | 5.5 V | 2.7 V | 1 kB | 3 mA | SYNCHRONOUS | 0.003 mA | 900 ns | 1KX8 | 1.2 mm | 8 | 8 kb | 0.000004 A | 8192 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | 1010DMMR | 4.4 mm | 3 mm | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C02-DRDW3TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | M24C02 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 图腾柱 | 8 | 4ms | I..C | 4ms | 50 | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512T11DHB010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | -40°C | Automotive grade | YES | 105°C | Tray | 活跃 | 3 (168 Hours) | 64 | CAN ALSO BE ORGANISED AS 512MX1 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 3V | 1mm | 未说明 | S-PBGA-B64 | 3.6V | INDUSTRIAL | 2.7V | ASYNCHRONOUS | 32MX16 | 16 | 536870912 bit | AEC-Q100 | 110 ns | PARALLEL | FLASH | 2.7V | 8 | 1.4mm | 9mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF400A-90-4I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST39 MPF™ | e1 | Obsolete | 2 (1 Year) | 48 | EAR99 | 锡银铜 | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | SST39WF400A | 48 | 1.8V | 1.95V | 1.7V | 4Mb 256K x 16 | 90ns | FLASH | Parallel | 16b | 256KX16 | 16 | 40μs | 18b | 4 Mb | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX66U1G45GXDI00 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | -40°C | YES | 85°C | Tray | 活跃 | 3 (168 Hours) | 24 | ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT | BOTTOM | BALL | 未说明 | 1 | 1.8V | 1mm | 未说明 | R-PBGA-B24 | 2V | INDUSTRIAL | 1.65V | SYNCHRONOUS | 166MHz | 256MX4 | 4 | 1073741824 bit | SERIAL | FLASH | 1.8V | 2 | 1.2mm | 8mm | 6mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70FL01GSDPBHVC10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~105°C TA | Tray | 2016 | FL-S | 活跃 | 3 (168 Hours) | 24 | 8542.32.00.71 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | 3.6V | 2.7V | SPI, Serial | 1Gb 128M x 8 | SYNCHRONOUS | 66MHz | FLASH | SPI - Quad I/O | 1GX1 | 1 | 3V | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS512SAGNFV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~105°C TA | Tray | 2016 | FS-S | 活跃 | 3 (168 Hours) | 8 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1.7V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | R-PDSO-N8 | 2V | 1.7V | 512Mb 64M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | SERIAL | 1.8V | 2 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS63WV1288DBLL-10JLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 32-BSOJ (0.300, 7.62mm Width) | YES | 32 | Volatile | -40°C~85°C TA | Tube | e3 | yes | 活跃 | 3 (168 Hours) | 32 | 哑光锡 | 2.4V~3.6V | DUAL | 260 | 1 | 40 | 32 | 不合格 | 3.6V | 2.5/3.3V | 2.4V | 1Mb 128K x 8 | 1 | 55mA | SRAM | Parallel | 3-STATE | 8 | 10ns | 17b | 1 Mb | 0.000055A | COMMON | Asynchronous | 8b | 2V | 3.405mm | 20.955mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1425KV18-250BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1425 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 4M x 9 | 2 | 590mA | 250MHz | 450 ps | SRAM | Parallel | 4MX9 | 3-STATE | 9 | 21b | 36 Mb | SEPARATE | Synchronous | 9b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant |