类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||
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 | CAT24C04C5ATR | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 5-XFBGA, WLCSP | 5 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | yes | 活跃 | 1 (Unlimited) | 5 | 1.7V~5.5V | BOTTOM | 未说明 | 1 | 3.3V | 0.3mm | 未说明 | 5 | 不合格 | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 4KX1 | 无卤素 | 1 | 5ms | 4 kb | 0.000003A | I2C | 1000000 Write/Erase Cycles | 100 | HARDWARE | 101000MR | 0.39mm | 0.86mm | 0.84mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 5962-8866206NA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Volatile | 5962-8866206 | This product may require additional documentation to export from the United States. | - | + 125 C | 5.5 V | 1.068507 oz | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | 32000 | SRAM | 通孔 | 通孔 | 28-CDIP (0.300", 7.62mm) | 28 | 28-CDIP | Renesas Electronics America Inc | Tube | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | 125 °C | -55 °C | Memory & Data Storage | 4.5V ~ 5.5V | 5 V | Parallel | 5.5 V | 4.5 V | 256Kbit | 1 | 150 mA | 160 mA | 25 ns | SRAM | Parallel | 32 k x 8 | 25ns | 15 b | 256 kb | Asynchronous | 8 b | SRAM | 32K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | 3.56 mm | 无 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1061DV33-10BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 1996 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 20 | CY7C1061 | 48 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 175mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 20b | 16 Mb | 0.025A | COMMON | Asynchronous | 16b | 2V | 9.5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42VM16800H-75BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 54-TFBGA | YES | 54 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 1.7V~1.95V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 1.8V | 1.95V | 1.7V | 128Mb 8M x 16 | 1 | SYNCHRONOUS | 133MHz | 6ns | DRAM | Parallel | 8MX16 | 16 | 12b | 128 Mb | 1.2mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2265KV18-450BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C2265 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 1M x 36 | 2 | 1.02A | 450MHz | 450 ps | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 18b | 36 Mb | 0.33A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1373KV33-100AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.B | 哑光锡 | 8542.32.00.41 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 30 | R-PQFP-G100 | 3.6V | 3.135V | 18Mb 1M x 18 | 100MHz | 8.5ns | SRAM | Parallel | 1MX18 | 18 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL064P0XMFV001 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~105°C TA | Tube | 2016 | FL-P | e3 | Obsolete | 3 (168 Hours) | 16 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 26mA | 104MHz | 8 ns | FLASH | SPI - Quad I/O | 64MX1 | 1 | 5μs, 3ms | 1b | 64 Mb | 0.00001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2.65mm | 10.3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS25LQ512B-JNLE-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 3.6V | 2.3V | SPI, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 512KX1 | 1 | 800μs | 3V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256-25UM/883-815 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 28-BCPGA | NO | Non-Volatile | -55°C~125°C TC | Tray | 1997 | yes | 活跃 | 1 (Unlimited) | 28 | 自动写入 | 4.5V~5.5V | PERPENDICULAR | 1 | 5V | 2.54mm | R-CPGA-P28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 250ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 4.4mm | 16.51mm | 13.97mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25H020F-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 2Kb 256 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV6416BLL-12TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP II | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 85°C | -40°C | 3V~3.6V | 3.3V | Parallel | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 45mA | 12ns | SRAM | Parallel | 12ns | 16b | 1 Mb | Asynchronous | 16b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C2262XV18-450BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C2262 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 450MHz | 2.5 ns | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | SEPARATE | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C15632KV18-400BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C15632 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 710mA | 400MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 20b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25080YI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | CAT25080 | 8 | 5.5V | 2/5V | 2.5V | 2-Wire, SPI, Serial | 8Kb 1K x 8 | 2mA | 20MHz | 40 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93A86RFVT-WME2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 0.65mm | 未说明 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 16Kb 1K x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 1KX16 | 16 | 5ms | 0.000002A | 16384 bit | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W947D6HBHX5E | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | -25°C~85°C TC | Tray | 2011 | 活跃 | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 60 | 不合格 | 1.8V | 1.95V | 1.7V | 128Mb 8M x 16 | 1 | 55mA | SYNCHRONOUS | 200MHz | 5ns | DRAM | Parallel | 8MX16 | 3-STATE | 16 | 15ns | 14b | 128 Mb | 0.00001A | COMMON | 4096 | 24816 | 24816 | 1.025mm | 9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S34MS04G204BHI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 63-VFBGA | YES | 63 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | MS-2 | Discontinued | 3 (168 Hours) | 63 | 8542.32.00.51 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 1.8V | 1.95V | 1.7V | 4Gb 256M x 16 | 20mA | FLASH | Parallel | 16b | 256MX16 | 16 | 45ns | 29b | 16 b | 0.00005A | 45 ns | NO | NO | YES | 4K | 64K | 1Kwords | YES | 1mm | 11mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L2026EM1I-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2017 | 不用于新设计 | 8 | EAR99 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 8 | R-PDSO-G8 | 不合格 | 3.6V | 3/3.3V | 2.7V | 2Mb 256K x 8 | SYNCHRONOUS | 86MHz | FLASH | SPI | 1MX2 | 2 | 50μs, 3ms | 0.00001A | 2097152 bit | SERIAL | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | RC28F256P30BFE | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 64-TBGA | 64 | 64-EasyBGA (10x13) | Non-Volatile | -40°C~85°C TA | Tray | 2004 | StrataFlash™ | Obsolete | 3 (168 Hours) | 85°C | -40°C | 1.7V~2V | 28F256P30 | 1.8V | 1.7V | Parallel, Serial | 2V | 1.7V | 256Mb 16M x 16 | 31mA | 52MHz | 100ns | FLASH | Parallel | 100ns | 24b | 256 Mb | Asynchronous | 16b | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT41J128M8JP-15E:G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 78-TFBGA | 78 | Volatile | 0°C~95°C TC | Tray | 2012 | e1 | yes | Obsolete | 3 (168 Hours) | 78 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 30 | MT41J128M8 | 78 | 1.5V | 1.575V | 1.425V | 1Gb 128M x 8 | 1 | 125mA | 667MHz | DRAM | Parallel | 8b | 128MX8 | 3-STATE | 8 | 17b | 1 Gb | 0.125 ns | COMMON | 8192 | 8 | 8 | 多库页面突发 | 1.2mm | 11.5mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S86400D-7TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | 54 | 3.3V | 3.6V | 3V | 512Mb 64M x 8 | 1 | 160mA | 143MHz | 5.4ns | DRAM | Parallel | 8b | 64MX8 | 3-STATE | 8 | 15b | 512 Mb | 0.004A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25128HU4I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Industrial grade | ACTIVE (Last Updated: 12 hours ago) | Gold | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 5V | 0.5mm | 8 | 不合格 | 5.5V | 2/5V | SPI, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 10MHz | 140 ns | EEPROM | SPI | 无卤素 | 8 | 5ms | 128 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 0.55mm | 3mm | 2mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX25U4033EM1I-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2013 | MXSMIO™ | e3 | 不用于新设计 | 3 (168 Hours) | 8 | MATTE TIN (800) | CAN BE ORGANISED AS 4 MBIT X 1 | 1.65V~2V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | 8 | R-PDSO-G8 | 不合格 | 2V | 1.8V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 1MX4 | 4 | 30μs, 3ms | 0.000008A | 4194304 bit | 1.8V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT25QL512ABB8E12-1SIT | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 24 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | 3.6V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI | 512MX1 | 1 | 8ms, 2.8ms | 536870912 bit | 3V | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29AL016J70BFI023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | AL-J | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 8b | 1MX16 | 16 | 70ns | 16 Mb | 0.000005A | 70 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | BOTTOM | YES | 1mm | 8.15mm | 无 | ROHS3 Compliant |