类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 自我刷新 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||||||||||||||||||||||
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 | AT45DB161E-MHF-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Gold | 表面贴装 | 表面贴装 | 8-UDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3.6V | 2.5/3.3V | 2.3V | SPI, Serial | 16Mb 528Bytes x 4096 pages | 26mA | 85MHz | 6 ns | FLASH | SPI | 8b | 16MX1 | 1 | 8μs, 4ms | 21b | 16 Mb | 0.00001A | Synchronous | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 512B | 0.6mm | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16160J-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 54-TFBGA | Volatile | -40°C~85°C TA | Tape & Reel (TR) | yes | 活跃 | 3 (168 Hours) | 3V~3.6V | 256Mb 16M x 16 | 166MHz | 5.4ns | DRAM | Parallel | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C185-35VC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | YES | 28 | Volatile | 0°C~70°C TA | Tube | 1996 | e0 | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 4.5V~5.5V | DUAL | 220 | 1 | 5V | not_compliant | 35GHz | 未说明 | CY7C185 | 28 | 不合格 | 5V | 5V | 64Kb 8K x 8 | 1 | SRAM | Parallel | 8KX8 | 3-STATE | 8 | 35ns | 13b | 64 kb | 35 ns | COMMON | YES | 3.556mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS41LV16100B-50TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 44 | EAR99 | Matte Tin (Sn) - annealed | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 50 | 不合格 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 180mA | ASYNCHRONOUS | 25ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | 10b | 16 Mb | 0.002A | COMMON | 1024 | NO | 1.2mm | 20.95mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16100C1-7TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | 50 | Volatile | -40°C~85°C TA | Tray | e3 | Obsolete | 2 (1 Year) | 50 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 50 | 不合格 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 150mA | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 16b | 1MX16 | 3-STATE | 16 | 12b | 16 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 20.95mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | AT25160AN-10SQ-2.7 | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | 2000 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 125 °C | 有 | AT25160AN-10SQ-2.7 | 5 MHz | 2048 words | 5 V | SOP | RECTANGULAR | Atmel Corporation | Obsolete | ATMEL CORP | 5.71 | SOIC | YES | 8 | 0.150 INCH, LEAD AND HALOGEN FREE, PLASTIC, MS-012AA, SOIC-8 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 3/5 V | AUTOMOTIVE | 2.7 V | SYNCHRONOUS | 0.007 mA | 2KX8 | 1.75 mm | 8 | 0.00001 A | 16384 bit | SERIAL | EEPROM | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L6433FXCI-08G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 24-TBGA, CSPBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2017 | MXSMIO™ | e1 | 活跃 | 3 (168 Hours) | 24 | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT | 2.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | R-PBGA-B24 | 3.6V | 2.65V | 64Mb 8M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 16MX4 | 4 | 50μs, 1.2ms | 67108864 bit | SERIAL | 3V | 2 | 1.2mm | 8mm | 6mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV1288BLL-55QLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 2 (1 Year) | 32 | EAR99 | 哑光锡 | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 40 | 32 | 3.3V | 3.6V | 2.5V | 1Mb 128K x 8 | 1 | 8mA | SRAM | Parallel | 8 | 55ns | 17b | 1 Mb | 55 ns | Asynchronous | 8b | 3mm | 20.445mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BU9847GUL-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 6-UFBGA, CSPBGA | 6 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 8542.32.00.51 | 1.7V~5.5V | BOTTOM | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | 6 | 不合格 | 5.5V | 1.8/5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 512X8 | 8 | 5ms | 4 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010D0MR | 0.55mm | 1.95mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS62C25616BL-45TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 44 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 40 | 44 | 5V | 5V | 4Mb 256K x 16 | 1 | 20mA | 20mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 45ns | 18b | 4 Mb | 45 ns | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV10248EBLL-45BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-VFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 48 | 2.2V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.75mm | 未说明 | 3.6V | 2.2V | 8Mb 1M x 8 | SRAM | Parallel | 1MX8 | 8 | 45ns | 8388608 bit | 45 ns | 1mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43LR32640A-5BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Industrial grade | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 90-LFBGA | 90 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 90 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 90 | 不合格 | 1.8V | 1.95V | 1.7V | 2Gb 64M x 32 | 1 | SYNCHRONOUS | 200MHz | 5ns | DRAM | Parallel | 32b | 64MX32 | 3-STATE | 32 | 15ns | 14b | 2 Gb | 0.00002A | COMMON | 8192 | 248 | 248 | 1.4mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL127SABBHIT00 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | 24 | 24-BGA (8x6) | Non-Volatile | -40°C~85°C TA | Tray | 2015 | FL-S | 活跃 | 3 (168 Hours) | 85°C | -40°C | 2.7V~3.6V | 108MHz | 3V | SPI, Serial | 128Mb 16M x 8 | 108MHz | FLASH | SPI - Quad I/O | 128 Mb | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16400J-5TL-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 54 | 3V~3.6V | DUAL | 3.3V | 0.8mm | 不合格 | 3.3V | 64Mb 4M x 16 | 110mA | 200MHz | 4.8ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | 0.002A | 67108864 bit | COMMON | 4096 | 1248FP | 1248 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1360C-200AXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2005 | e4 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 3.135V~3.6V | QUAD | 0.635mm | CY7C1360 | 3.3V | 9Mb 256K x 36 | 4 | 220mA | 200MHz | 3ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29AL016J70FFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | AL-J | 活跃 | 3 (168 Hours) | 64 | EAR99 | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 8b | 1MX16 | 16 | 70ns | 16 Mb | 0.000005A | 70 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12131 | YES | BOTTOM | YES | 1.4mm | 9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1514AV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1514 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 1.1A | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 20b | 72 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 17mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STK11C68-SF45I | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-SOIC (0.342, 8.69mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | STK11C68 | 28 | R-PDSO-G28 | 不合格 | 5.5V | 5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 0.065mA | NVSRAM | Parallel | 8KX8 | 8 | 45ns | 0.0015A | 65536 bit | 45 ns | 2.794mm | 18.3895mm | 8.6865mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL064LABNFM010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-WFDFN Exposed Pad | YES | Non-Volatile | -40°C~125°C TA | Tray | Automotive, AEC-Q100, FL-L | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) | IT ALSO HAVE X1 MEMORY WIDTH | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.8mm | 未说明 | S-PDSO-N8 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 0.6mm | 4mm | 4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | GD25LQ64CWIGR | GigaDevice Semiconductor (HK) Limited | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | 8542.32.00.51 | 1.65V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | R-PDSO-N8 | 2V | 1.65V | 64Mb 8M x 8 | SYNCHRONOUS | 120MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 2.4ms | 67108864 bit | SERIAL | 1.8V | 0.8mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C09159AV-12AC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 1997 | e0 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 锡铅 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3V~3.6V | QUAD | 240 | 1 | 3.3V | 0.5mm | not_compliant | 30 | CY7C09159 | 100 | 不合格 | 3.3V | 3.6V | 3V | 72Kb 8K x 9 | 2 | 180mA | 50MHz | 12ns | SRAM | Parallel | 8KX9 | 3-STATE | 13b | 72 kb | 0.0005A | COMMON | Synchronous | 9b | 3V | 1.4mm | 14mm | 14mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G46F-3GTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | e3 | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | IT ALSO OPERATES AT 1MHZ AT 1.7 MIN | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 1Kb 64 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 64X16 | 16 | 5ms | 1024 bit | SERIAL | 3-WIRE | 5ms | 8 | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512T10DHI023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-T | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 未说明 | S-PBGA-B64 | 3.6V | 2.7V | 512Mb 64M x 8 | ASYNCHRONOUS | 100ns | FLASH | Parallel | 32MX16 | 16 | 60ns | 536870912 bit | 2.7V | 8 | 1.4mm | 9mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF1601-70-4C-MBQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | Obsolete | 3 (168 Hours) | 48 | EAR99 | 锡银铜 | BOTTOM BOOT-BLOCK | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 40 | SST39WF1601 | 48 | 不合格 | 1.8V | 1.95V | 1.65V | 16Mb 1M x 16 | 10mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 40μs | 20b | 16 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | BOTTOM | YES | 0.73mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| E28F320J5-120 | Intel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE | 2000000 | PLASTIC/EPOXY | TSSOP56,.8,20 | -20 °C | 未说明 | 120 ns | 85 °C | 无 | E28F320J5-120 | 2097152 words | 5 V | TSOP1 | RECTANGULAR | Intel Corporation | Obsolete | INTEL CORP | 8.76 | TSOP | YES | 56 | 14 X 20 MM, TSOP-56 | e0 | 3A991.B.1.A | NOR型号 | Tin/Lead (Sn/Pb) | CONFIGURABLE AS 2M X 16; BLOCK ERASE | 8542.32.00.51 | 闪存 | CMOS | DUAL | 鸥翼 | 未说明 | 1 | 0.5 mm | unknown | 56 | R-PDSO-G56 | 不合格 | 5.5 V | 3/3.3,5 V | OTHER | 4.5 V | ASYNCHRONOUS | 0.08 mA | 2MX16 | 3-STATE | 1.2 mm | 16 | 0.000125 A | 33554432 bit | PARALLEL | FLASH | 5 V | 8 | NO | NO | YES | 32 | 128K | 16/32 words | YES | YES | 18.4 mm | 14 mm |