类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||||||||||||||||||||||
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![]() | 93C56T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 8 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | 93C56 | 8 | 5V | 5V | Serial | 2Kb 256 x 8 128 x 16 | 4mA | 2MHz | 2 μs | EEPROM | SPI | 3-STATE | 8 | 2ms | 2 kb | 0.0001A | MICROWIRE | 1000000 Write/Erase Cycles | 1ms | 40 | SOFTWARE | 16 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W632GG6MB-12 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 96-VFBGA | YES | Volatile | 0°C~95°C TC | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | AUTO/SELF REFRESH | 1.425V~1.575V | BOTTOM | 未说明 | 1 | 1.5V | 0.8mm | 未说明 | R-PBGA-B96 | 1.575V | 1.425V | 2Gb 128M x 16 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX16 | 16 | 2147483648 bit | 1mm | 13mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA76T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA76 | 8 | 6V | 2/5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | EEPROM | SPI | 512X16 | 3-STATE | 16 | 5ms | 8 kb | 0.00003A | TS 16949 | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1515KV18-300BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1515 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 790mA | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 72 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL256SDPBHVC00 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 24-TBGA | 24 | Non-Volatile | -40°C~105°C TA | Tray | 2007 | FL-S | 活跃 | 3 (168 Hours) | 24 | ALSO CONFIGURABLE AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 66MHz | 0.1mA | 8 ns | FLASH | SPI - Quad I/O | 32MX8 | 8 | 32b | 256 Mb | 0.0003A | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | 1.2mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS46TR16128CL-125KBLA1 | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1.283V~1.45V | BOTTOM | 260 | 1 | 1.35V | 0.8mm | 10 | R-PBGA-B96 | 1.45V | 1.283V | 2Gb 128M x 16 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 1.2mm | 13mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R1EX24004ATAS0I#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 3.3V | 0.65mm | R1EX24004 | 8 | 5.5V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4096 bit | I2C | 5ms | 1.1mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | N25Q512A13GSF40F | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NOR | SOP, SOP16,.4 | 小概要 | 64000000 | PLASTIC/EPOXY | SOP16,.4 | -40 °C | 85 °C | 有 | N25Q512A13GSF40F | 108 MHz | 67108864 words | 3 V | SOP | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.8 | Obsolete (Last Updated: 2 years ago) | Tin | YES | 16 | 16 | Compliant | Tape & Reel | 有 | NOR型号 | 85 °C | -40 °C | CMOS | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | 3 V | 3.6 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 20 mA | SYNCHRONOUS | 0.015 mA | 64MX8 | 2.5 mm | 8 | 1 b | 512 Mb | 0.0005 A | 536870912 bit | SERIAL | Synchronous | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MD2764A-35/B | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | Rochester Electronics, LLC | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL512T10FHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-T | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | R-PBGA-B64 | 3.6V | 2.7V | 512Mb 64M x 8 | ASYNCHRONOUS | 100ns | FLASH | Parallel | 32MX16 | 16 | 60ns | 536870912 bit | 2.7V | 8 | 1.4mm | 13mm | 11mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C131A-15JXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | -40°C~85°C TA | Tray | 1998 | e3 | Obsolete | 3 (168 Hours) | 52 | Matte Tin (Sn) | 中断标志 | 4.5V~5.5V | QUAD | 1 | 5V | unknown | CY7C131 | 52 | 不合格 | 5V | 5V | 8Kb 1K x 8 | 2 | 190mA | SRAM | Parallel | 1KX8 | 3-STATE | 8 | 15ns | 20b | 8 kb | 0.015A | 15 ns | COMMON | Asynchronous | 8b | 5.08mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25U8033EM1I-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | MXSMIO™ | e3 | 不用于新设计 | 3 (168 Hours) | 8 | Matte Tin (Sn) | CAN BE ORGANISED AS 8 MBIT X 1 | 1.65V~2V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | 8 | R-PDSO-G8 | 不合格 | 2V | 1.8V | 1.65V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 2MX4 | 4 | 30μs, 3ms | 0.000008A | 8388608 bit | 1.8V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT24CS08-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | Gold | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~5.5V | DUAL | 1 | 5V | 0.5mm | AT24CS08 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 8 | 5ms | I2C | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1472V33-167AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 2004 | NoBL™ | e3 | Obsolete | 3 (168 Hours) | 100 | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | unknown | 20 | CY7C1472 | 100 | 不合格 | 3.3V | 3.6V | 3.135V | 72Mb 4M x 18 | 2 | 450mA | 167MHz | 3.4ns | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 22b | 72 Mb | COMMON | Synchronous | 18b | 3.14V | 1.6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FM24V02-G | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TA | Tube | 2008 | F-RAM™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 20 | FM24V02 | 8 | 3.3V | 3.6V | 2V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | 1mA | 3.4MHz | 130ns | FRAM | I2C | 8b | 8 | 256 kb | 0.00015A | 8b | 1.75mm | 4.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC66CT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93LC66C | 8 | 5.5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | SYNCHRONOUS | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | MICROWIRE | 6ms | 8 | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25DF081A-MH-Y | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-UDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TC | Tray | 1997 | e4 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 8Mb 256Bytes x 4096 pages | 20mA | 100MHz | FLASH | SPI | 8b | 1 | 7μs, 3ms | 1b | 8 Mb | 0.00001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 0.6mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST26VF064BT-104V/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | SST26VF064 | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 64 Mb | 3V | 256B | 2.03mm | 5.26mm | 5.25mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST38VF6401BT-70I/TV | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | SST38 | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST38VF6401 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 0.05mA | 70ns | FLASH | Parallel | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00004A | 2.7V | YES | YES | NO | 128 | 32K | 16B | YES | BOTTOM | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL128LAGMFV013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | FL-L | 活跃 | 3 (168 Hours) | 8 | IT IS ALSO CONFIGURED AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 32MX4 | 4 | 134217728 bit | SERIAL | 3V | 2 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25160AN-10SU-1.8 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 20MHz | AT25160 | 5V | SPI, Serial | 5.5V | 1.8V | 16Kb 2K x 8 | 10mA | 20MHz | 80 ns | EEPROM | SPI | 5ms | 16 kb | 5MHz | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S34ML01G100BHI003 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 63-VFBGA | 63 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | ML-1 | Discontinued | 3 (168 Hours) | 63 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 3.6V | 3/3.3V | 2.7V | 1Gb 128M x 8 | 0.03mA | FLASH | Parallel | 128MX8 | 8 | 25ns | 28b | 1 Gb | 0.00005A | 25 ns | 3V | NO | NO | YES | 1K | 128K | 2kB | YES | 1mm | 11mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC76T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~6.0V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC76 | 8 | 6V | 3/5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 3 μs | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.00003A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL256LAGBHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FL-L | 活跃 | 3 (168 Hours) | 24 | IT ALSO HAVE MEMORY WIDTH X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | R-PBGA-B24 | 3.6V | 2.7V | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 64MX4 | 4 | 268435456 bit | SERIAL | 3V | 2 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST38VF6403BT-70I/TV | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | SST38 | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST38VF6403 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 0.05mA | 70ns | FLASH | Parallel | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00004A | 2.7V | YES | YES | NO | 8127 | 4K32K | 16B | YES | BOTTOM | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant |