类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||
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 | BR24G01NUX-3TTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | BR24G01 | R-PDSO-N8 | 不合格 | 5.5V | 1.8/5V | 1.6V | 2-Wire, I2C, Serial | 1Kb 128 x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 128X8 | 8 | 5ms | 1 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 0.6mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24FC256T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-WFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 260 | 1 | 0.5mm | 40 | 24FC256 | 5.5V | 1.7V | I2C, Serial | 256Kb 32K x 8 | 3mA | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 256 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | NO | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W632GG6KB-15 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 96-TFBGA | 96 | Volatile | 0°C~95°C TC | Tray | 2016 | Discontinued | 3 (168 Hours) | 96 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1.425V~1.575V | BOTTOM | 未说明 | 1 | 1.5V | 0.8mm | 未说明 | 96 | 不合格 | 1.5V | 1.575V | 1.425V | 2Gb 128M x 16 | 1 | 235mA | SYNCHRONOUS | 667MHz | 20ns | DRAM | Parallel | 128MX16 | 3-STATE | 16 | 17b | 2 Gb | 0.065A | COMMON | 8192 | 8 | 8 | 1.2mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26WF040B-104I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2014 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | SST26WF040 | 1.8V | 1.95V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 4MX1 | 1 | 1.5ms | 4 Mb | TS 16949 | 256B | 1.75mm | 4.9mm | 3.9mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT46V32M16CV-5B:J | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | 0°C~70°C TA | Tray | 2011 | e0 | no | Obsolete | 3 (168 Hours) | 60 | EAR99 | 锡铅银 | AUTO/SELF REFRESH | 8542.32.00.28 | 2.5V~2.7V | BOTTOM | 235 | 1 | 2.6V | 1mm | 30 | 60 | 2.6V | 2.7V | 2.5V | 512Mb 32M x 16 | 1 | 480mA | 200MHz | 700ps | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 15ns | 15b | 512 Mb | 0.005A | 400MHz | COMMON | 8192 | 248 | 248 | 1.2mm | 12.5mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43TR16128C-125KBL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | 0°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 10 | R-PBGA-B96 | 1.575V | 1.425V | 2Gb 128M x 16 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 1.2mm | 13mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23LCV512-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | 1 | 2.54mm | 23LCV512 | 5.5V | 2.5V | SPI, Serial | 512Kb 64K x 8 | 1 | 10mA | 20MHz | 25 ns | NVSRAM | SPI - Dual I/O | 16b | 512 kb | Synchronous | 8b | 4.953mm | 10.16mm | 7.112mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL064LABNFI011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-WFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tube | FL-L | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) | IT ALSO HAVE X1 MEMORY WIDTH | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.8mm | 未说明 | S-PDSO-N8 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 0.6mm | 4mm | 4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1518KV18-333BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1518 | 165 | 1.8V | 72Mb 4M x 18 | 1 | 520mA | 333MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 22b | 72 Mb | COMMON | Synchronous | 18b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V3577S80BQI | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 165-TBGA | 165-CABGA (13x15) | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 3.135V~3.465V | IDT71V3577 | 4.5Mb 128K x 36 | 100MHz | 8ns | SRAM | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128S10FHIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 8M x 16 | ASYNCHRONOUS | 0.08mA | 100ns | FLASH | Parallel | 8MX16 | 16 | 60ns | 0.0001A | 134217728 bit | 3V | YES | YES | YES | 128 | 64K | 16words | YES | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS39LV040-70JCE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~105°C TA | Tube | 不用于新设计 | 3 (168 Hours) | 32 | 2.7V~3.6V | QUAD | 1 | 3V | 1.27mm | 3.3V | 3.6V | 2.7V | 4Mb 512K x 8 | 15mA | 15mA | FLASH | Parallel | 8b | 512KX8 | 8 | 70ns | 19b | 4 Mb | 70 ns | Asynchronous | 8b | 3V | 3.56mm | 13.97mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL164K0XBHI033 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 24-TBGA | 24 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | FL1-K | e1 | Obsolete | 3 (168 Hours) | 24 | 锡银铜 | ALSO CONFIGURABLE AS 64M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 25mA | 25mA | 108MHz | 8.5 ns | FLASH | SPI - Quad I/O | 8b | 16MX4 | 4 | 3ms | 24b | 64 Mb | 0.000005A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 1.2mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25H040F-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 4Kb 512 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | 4096 bit | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24C01CTESNRVA | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C32-DRDW8TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | M24C32 | 不合格 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8 | 4ms | 0.000001A | I2C | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-3829412MZA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Volatile | 活跃 | 5962-3829412 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | SRAM | 通孔 | 28-CDIP (0.300", 7.62mm) | 28-CDIP | Renesas Electronics America Inc | Tube | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 64Kbit | 35 ns | SRAM | Parallel | 8 k x 8 | 35ns | SRAM | 8K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MR2A16AMA35 | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-LFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 48 | EAR99 | 8542.32.00.71 | 3V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.75mm | 未说明 | 48 | 不合格 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 105mA | 155mA | ASYNCHRONOUS | RAM | Parallel | 16b | 256KX16 | 16 | 35ns | 4 Mb | 0.028A | 35 ns | 16b | 1.35mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C31026C-12TIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tube | 2006 | yes | 活跃 | 3 (168 Hours) | 44 | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | 1MHz | 44 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 1 | SRAM | Parallel | 12ns | 16b | 1 Mb | 1mm | 18.42mm | 10.16mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1366C-166AXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2003 | e4 | yes | 活跃 | 3 (168 Hours) | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 3.135V~3.6V | CY7C1366 | 3.3V | 9Mb 256K x 36 | 4 | 180mA | 166MHz | 3.5ns | SRAM | Parallel | 18b | 9 Mb | Synchronous | 36b | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 34AA04T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2016 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 2.2V | 0.65mm | 40 | 34AA04 | R-PDSO-G8 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 350ns | EEPROM | I2C | 512X8 | 8 | 5ms | 4096 bit | TS 16949 | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32200E-6TL-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | e3 | yes | Obsolete | 2 (1 Year) | 86 | EAR99 | 哑光锡 | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 3.3V | 3.6V | 3V | 64Mb 2M x 32 | 1 | 160mA | 166MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | 13b | 64 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1370DV25-200BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e0 | no | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 2.375V~2.625V | BOTTOM | 1 | 2.5V | 1mm | CY7C1370 | 165 | 2.5V | 2.625V | 2.375V | 18Mb 512K x 36 | 4 | 300mA | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 18 | YES | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STK14D88-RF45I | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | Obsolete | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.635mm | unknown | 20 | STK14D88 | 48 | 不合格 | 3.3V | 3.6V | 2.7V | 256Kb 32K x 8 | 55mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 32KX8 | 8 | 45ns | 256 kb | 0.003A | 45 ns | 8b | 2.79mm | 15.875mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256E-20DM/883-815 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 28-CDIP (0.600, 15.24mm) | NO | Non-Volatile | -55°C~125°C TC | Tube | 1997 | 活跃 | 1 (Unlimited) | 28 | 自动写入 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | R-GDIP-T28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | ROHS3 Compliant |