类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||
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 | IS43TR16128B-125KBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 96-TFBGA | 96 | Volatile | -40°C~95°C TC | Tray | 活跃 | 3 (168 Hours) | 96 | AUTO/SELF REFRESH | 1.425V~1.575V | BOTTOM | 1 | 1.5V | 0.8mm | 不合格 | 1.5V | 1.575V | 1.425V | 2Gb 128M x 16 | 1 | ASYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 16b | 128MX16 | 3-STATE | 16 | 15ns | 14b | 2 Gb | 0.014A | COMMON | 8192 | 48 | 48 | 1.2mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | TC58NVG0S3ETAI0 | Toshiba | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8403613JA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tube | Volatile | 840361 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 15 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | SRAM | 通孔 | 24-CDIP (0.600", 15.24mm) | 24-CDIP | Renesas Electronics America Inc | 最后一次购买 | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 16Kbit | 1 | 95 mA | 70 ns | SRAM | Parallel | 2 k x 8 | 70ns | SRAM | 2K x 8 | 2.9 mm | 32 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28LV010-20JC | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | THGBMDG5D1LBAIT | Toshiba | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 131 Weeks | FLASH, NAND | 2016 | yes | 活跃 | 85°C | -25°C | 52MHz | MMC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC024T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 24LC024 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1423KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1423 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 460mA | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W25X80AVSSIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2016 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 18mA | 100MHz | 7 ns | FLASH | SPI | 8 | 3ms | 24b | 8 Mb | 0.00001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2.16mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C66BT-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 93C66B | 6 | 5V | 5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 16 | 2ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.45mm | 2.95mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS25LP064-JBLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Bulk | e3 | Discontinued | 3 (168 Hours) | 8 | Tin (Sn) | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 10 | 3V | 3.6V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 64MX1 | 1 | 800μs | 24b | 64 Mb | 3V | 256B | 2.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS46R16160D-6BLA1-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 60 | 2.3V~2.7V | BOTTOM | 2.5V | 0.8mm | 2.5V | 256Mb 16M x 16 | 280mA | 166MHz | 700ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | 15b | 256 Mb | 0.004A | COMMON | 8192 | 248 | 248 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M34D64-WMN6T | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | M34D64 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 10ms | 40 | HARDWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C56A | 8 | 5V | 5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF401C-70-4I-MAQE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 0.5mm | SST39VF401C | 3.3V | 4Mb 256K x 16 | 18mA | 70ns | FLASH | Parallel | 256KX16 | 16 | 10μs | 1b | 4 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 128 | 2K | YES | BOTTOM | YES | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32800D-6TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 86 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 180mA | 166MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | 32 | 13b | 256 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PC28F512P33TFA | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 64-TBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | Axcell™ | e1 | yes | Obsolete | 3 (168 Hours) | 64 | 锡银铜 | 2.3V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | 28F512P33 | 64 | 2.3V | Parallel, Serial | 512Mb 32M x 16 | 31mA | 52MHz | FLASH | Parallel | 32MX16 | 16 | 95ns | 25b | 512 Mb | 95 ns | Asynchronous | 16b | 1.2mm | 10mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT24C16D-UUM0B-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 4-XFBGA, WLCSP | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 4 | 1.7V~3.6V | BOTTOM | 1 | 1.8V | 0.4mm | AT24C16D | S-PBGA-B4 | 不合格 | 3.6V | 1.8/3.3V | 1.7V | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 2KX8 | 8 | 5ms | 4e-7A | 16384 bit | SERIAL | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | 1010MMMR | 0.355mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MR25H256ACDF | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-VDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-N8 | 3.6V | 2.7V | 256Kb 32K x 8 | SYNCHRONOUS | 40MHz | RAM | SPI | 32KX8 | 8 | 262144 bit | 0.9mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25H160F-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 16Kb 2K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G46F-3BGTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | e3 | 活跃 | 1 (Unlimited) | 8 | Tin (Sn) | IT ALSO OPERATES AT 1MHZ AT 1.7 MIN | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 1Kb 64 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 64X16 | 16 | 5ms | 1024 bit | SERIAL | 3-WIRE | 5ms | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93H46RFVT-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 0.65mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 1Kb 64 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 64X16 | 16 | 4ms | 0.00001A | 1024 bit | SERIAL | MICROWIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 1.2mm | 4.4mm | 3mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S70GL02GT11FHI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-T | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.71 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | R-PBGA-B64 | 3.6V | 2.7V | 2Gb 256M x 8 128M x 16 | ASYNCHRONOUS | 110ns | FLASH | Parallel | 128MX16 | 16 | 2147483648 bit | 3V | 8 | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N11FFIS40 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 64-LBGA | 64 | 64-FBGA (13x11) | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-N | 活跃 | 3 (168 Hours) | 85°C | -40°C | 1.65V~3.6V | Parallel | 32Mb 4M x 8 2M x 16 | 110ns | FLASH | Parallel | 110ns | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1362C-166AJXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1362 | 100 | 3.3V | 3.6V | 3.135V | 9Mb 512K x 18 | 2 | 180mA | 166MHz | 3.5ns | SRAM | Parallel | 3-STATE | 18 | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.14V | 1.6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29WS256P0PBFW000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 84-VFBGA | 84 | Non-Volatile | -25°C~85°C TA | Tray | 2014 | WS-P | e1 | 活跃 | 3 (168 Hours) | 84 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 1.8V | 1.95V | 1.7V | Parallel, Serial | 256Mb 16M x 16 | 80mA | 66MHz | 80ns | FLASH | Parallel | 16b | 16MX16 | 16 | 60ns | 24b | 256 Mb | 0.000005A | Asynchronous | 16b | YES | YES | 8254 | 16K64K | 8words | YES | BOTTOM/TOP | 1mm | 11.6mm | 无 | ROHS3 Compliant |