类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 阀门数量 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 宏细胞数 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||
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 | IS41LV16100C-50KLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 42-BSOJ (0.400, 10.16mm Width) | 42 | Volatile | -40°C~85°C TA | Tube | Obsolete | 3 (168 Hours) | 42 | EAR99 | CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH | 3V~3.6V | DUAL | 1 | 3.3V | 1.27mm | 42 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 90mA | 90mA | 25ns | DRAM | Parallel | 16b | 1MX16 | 16 | 10b | 16 Mb | 3.76mm | 27.305mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C128M16D2-25BIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 84-TFBGA | YES | 84 | Volatile | -40°C~95°C TC | Tray | 2014 | 活跃 | 3 (168 Hours) | 84 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 1.8V | 1.9V | 1.7V | 2Gb 128M x 16 | 1 | SYNCHRONOUS | 400MHz | 400 ps | DRAM | Parallel | 128MX16 | 16 | 15ns | 14b | 2 Gb | 1.2mm | 13.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGMFIR13 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | FL-S | e3 | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | R-PDSO-G16 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 32MX4 | 4 | 1b | 128 Mb | 0.0001A | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1312KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | 3A991 | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1312 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 560mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1515AV18-200BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 流水线结构 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 1mm | not_compliant | CY7C1515 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 850mA | 200MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 38b | 72 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 17mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | R1LV1616HSA-5SI#B1 | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 最后一次购买 | Volatile | R1LV1616H | TSOP-I | 无 | 表面贴装 | 96 | Renesas Electronics | Renesas Electronics | Details | SRAM | 表面贴装 | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I | Renesas Electronics America Inc | Tray | -40°C ~ 85°C (TA) | Tray | R1LV1616HSA-I | Memory & Data Storage | 2.7V ~ 3.6V | 48 | 16Mbit | 55 ns | SRAM | Parallel | 55ns | SRAM | 1M x 16, 2M x 8 | 1.2 mm | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS25LQ032B-JNLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Tube | e3 | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 3.6V | 2.3V | SPI, Serial | 32Mb 4M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 32MX1 | 1 | 1ms | 33554432 bit | 2.7V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C01CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C01C | 8 | 5V | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 1ms | 1 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1ms | 200 | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C76C-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT88SC0404C-SU | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CYD36S36V18-167BGXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 484-FBGA | 484 | Volatile | -40°C~85°C TA | Tray | 2011 | e1 | yes | Obsolete | 3 (168 Hours) | 484 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 1.42V~1.58V 1.7V~1.9V | BOTTOM | 260 | 1 | 1.5V | 1mm | 30 | CYD36S36 | 484 | 1.8V | 1.58V | 36Mb 1M x 36 | 2 | 1.47A | 167MHz | 4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.7A | COMMON | Synchronous | 36b | 1.4V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C0852V-133BBI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 172-LFBGA | 172 | Volatile | -40°C~85°C TA | Tray | 2003 | e0 | no | Obsolete | 3 (168 Hours) | 172 | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | CY7C0852 | 172 | 3.3V | 3.465V | 3.135V | 4.5Mb 128K x 36 | 2 | 300mA | 133MHz | 4.4 ns | SRAM | Parallel | 3-STATE | 36 | 17b | 4 Mb | 0.075A | COMMON | Synchronous | 36b | 3.14V | 15mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1041DV33-10BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 10GHz | 20 | CY7C1041 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 1 | 90mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | COMMON | Asynchronous | 16b | 2V | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62157EV18LL-55BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.65V~2.25V | BOTTOM | 260 | 1 | 1.8V | 0.75mm | 30 | CY62157 | 1.8V | 2.25V | 8Mb 512K x 16 | 1 | 25mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 19b | 8 Mb | 0.000003A | 55 ns | COMMON | Asynchronous | 16b | 1V | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93H46RFJ-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2012 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 1Kb 64 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 64X16 | 16 | 4ms | 0.00001A | 1024 bit | SERIAL | MICROWIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB161E-SSHF-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Bulk | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 不合格 | 3.6V | 2.5/3.3V | 2.3V | SPI, Serial | 16Mb 528Bytes x 4096 pages | 26mA | 22mA | 85MHz | 7 ns | FLASH | SPI | 8b | 16MX1 | 1 | 8μs, 4ms | 21b | 16 Mb | 0.00001A | Synchronous | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 528B | 1.75mm | 4.925mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71016S12Y | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-BSOJ (0.400, 10.16mm Width) | 44-SOJ | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 4.5V~5.5V | IDT71016 | 1Mb 64K x 16 | 12ns | SRAM | Parallel | 12ns | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25L04B-DG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | F-RAM™ | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 0.95mm | 30 | FM25L04 | 8 | 不合格 | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Kb 512 x 8 | 3mA | SYNCHRONOUS | 20MHz | 20 ns | FRAM | SPI | 8b | 8 | 4 kb | 0.000006A | 8b | 4.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT25SF321-SHD-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2014 | yes | Obsolete | 1 (Unlimited) | 8 | 2.5V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2.5V | 32Mb 4M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 32MX1 | 1 | 5μs, 5ms | 33554432 bit | SERIAL | 3V | 2.16mm | 5.29mm | 5.24mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT93C46-10SU-2.7 | Atmel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT24C512YIGT3JN | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | Gold, Nickel | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 1MHz | 2-Wire, I2C, Serial | 5.5V | 1.8V | 512Kb 64K x 8 | 1MHz | 900ns | EEPROM | I2C | 5ms | 400kHz | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29W640GB90NA6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | 哑光锡 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | M29W640 | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 10mA | FLASH | Parallel | 4MX16 | 16 | 90ns | 64 Mb | 0.0001A | 90 ns | Asynchronous | 8 | YES | YES | YES | 8127 | 8K64K | 4/8words | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS256SDSBHM203 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, FS-S | 活跃 | 3 (168 Hours) | 8542.32.00.51 | 1.7V~2V | 256Mb 32M x 8 | 80MHz | FLASH | SPI - Quad I/O, QPI | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1069DV33-10BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 1996 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 20 | CY7C1069 | 48 | 3.3V | 3.6V | 3V | 16Mb 2M x 8 | 1 | 175mA | SRAM | Parallel | 2MX8 | 3-STATE | 8 | 10ns | 21b | 16 Mb | 0.025A | COMMON | Asynchronous | 8b | 2V | 9.5mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DSM2150F5V-12T6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 80-TQFP | 80 | Non-Volatile | -40°C~85°C TA | Tray | e3/e4 | Obsolete | 3 (168 Hours) | 80 | TIN/NICKEL PALLADIUM GOLD | 8542.32.00.71 | 3V~3.6V | QUAD | 未说明 | 1 | 3.3V | 0.5mm | 120GHz | 未说明 | DSM2150 | 80 | 不合格 | 5.25V | 3.6V | 3V | 4Mb 512K x 8 | ASYNCHRONOUS | 120ns | FLASH | Parallel | 16 | 4194304 bit | 3000 | 16 | 1.2mm | 12mm | 12mm | ROHS3 Compliant | 无铅 |