类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 刷新周期 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 自我刷新 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS62WV12816DBLL-45TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | Obsolete | 3 (168 Hours) | 44 | Matte Tin (Sn) | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 10 | 44 | 不合格 | 3.3V | 3.6V | 2.5V | 2Mb 128K x 16 | 1 | SRAM | Parallel | 3-STATE | 45ns | 17b | 2 Mb | 0.000006A | 45 ns | COMMON | Asynchronous | 16b | 1.05mm | 18.54mm | 10.29mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB642D-CNU | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1997 | Discontinued | 8MB | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23LCV512T-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | 260 | 1 | 0.65mm | 40 | 23LCV512 | R-PDSO-G8 | 5.5V | 2.5V | SPI, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 20MHz | NVSRAM | SPI - Dual I/O | 64KX8 | 8 | 524288 bit | TS 16949 | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93AA76AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA76A | 8 | 不合格 | 5V | Serial | 8Kb 1K x 8 | 3mA | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC64FT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC64F | 8 | 不合格 | 5V | I2C, Serial | 64Kb 8K x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CYD18S72V18-167BBXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 256-LBGA | YES | 256 | Volatile | -40°C~85°C TA | Tray | 2005 | e1 | Obsolete | 5 (48 Hours) | 484 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.42V~1.58V 1.7V~1.9V | BOTTOM | 260 | 1 | 1.5V | 1mm | 40 | CYD18S72 | 484 | S-PBGA-B484 | 1.8V | 1.58V | 18Mb 256K x 72 | 2 | 167MHz | 4ns | SRAM | Parallel | 72 | 36b | 18 Mb | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W25X40AVSNIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 18mA | 100MHz | 7 ns | FLASH | SPI | 8 | 3ms | 24b | 4 Mb | 0.00001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.72mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C10612DV33-10ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tube | 1996 | e3 | Obsolete | 3 (168 Hours) | 54 | Matte Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 20 | CY7C10612 | 54 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 175mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 20b | 16 Mb | 0.025A | 100MHz | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14V101QS-SE108XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2015 | 活跃 | 3 (168 Hours) | 16 | EAR99 | 8542.32.00.41 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | CY14V101 | R-PDSO-G16 | 3.6V | 2.7V | SPI, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 108MHz | NVSRAM | SPI | 128KX8 | 8 | 1048576 bit | 2.667mm | 10.2865mm | 7.4925mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95320-DWDW4TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~145°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 1 | 5V | 0.65mm | M95320 | 8 | 5.5V | 2.5V | SPI, Serial | 32Kb 4K x 8 | 4mA | 10MHz | 20 ns | EEPROM | SPI | 8 | 4ms | 32 kb | SPI | 4ms | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C4122KV13-106FCXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 21 Weeks | 表面贴装 | 361-BBGA, FCBGA | YES | 361 | Volatile | 0°C~70°C TA | Tray | 2004 | 活跃 | 3 (168 Hours) | 361 | 3A991.B.2.A | 8542.32.00.41 | 1.26V~1.34V | BOTTOM | 1 | 1.3V | 1mm | 1.34V | 1.26V | 144Mb 8M x 18 | 1066MHz | SRAM | Parallel | 8MX18 | 18 | 150994944 bit | 2.765mm | 21mm | 21mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC128XT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC128 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 128Kb 16K x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 128 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MB85R4M2TFN-G-ASE1 | Fujitsu Electronics America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP | Non-Volatile | -40°C~85°C TA | Tray | 2015 | Obsolete | 1 (Unlimited) | 1.8V~3.6V | 4Mb 256K x 16 | 150ns | FRAM | Parallel | 150ns | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B101I-SFXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | CY14B101 | 16 | 不合格 | 3.3V | 3.6V | 3V | 2.7V | 2-Wire, I2C, Serial | 1Mb 128K x 8 | 1mA | SYNCHRONOUS | 3.4MHz | 900 ns | NVSRAM | I2C | 8b | 128KX8 | 8 | 1 Mb | 0.00025A | 8b | 2.667mm | 10.2865mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25U4033EZNI-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2008 | MXSMIO™ | e3 | 活跃 | 3 (168 Hours) | 8 | MATTE TIN (800) | CAN BE ORGANISED AS 4 MBIT X 1 | 1.65V~2V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | 8 | R-PDSO-N8 | 不合格 | 2V | 1.8V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 1MX4 | 4 | 30μs, 3ms | 0.000008A | 4194304 bit | 1.8V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W25X05CLSNIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | SpiFlash® | 活跃 | 3 (168 Hours) | 8 | EAR99 | IT ALSO OPERATES AT 2.3 V AT 80 MHZ | 8542.32.00.51 | 2.3V~3.6V | DUAL | 1 | 3V | 1.27mm | 8 | R-PDSO-G8 | 不合格 | 3.6V | 2.5/3.3V | 2.7V | SPI, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 512KX1 | 1 | 800μs | 0.000005A | 524288 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC256-90JU-600 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PQCC-J32 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 90ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | 5V | 10ms | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1512KV18-300BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1512 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 750mA | 300MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 21b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1512AV18-250BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1512 | 165 | 不合格 | 1.9V | 1.5/1.81.8V | 1.7V | 72Mb 4M x 18 | 250MHz | 0.9mA | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 75497472 bit | SEPARATE | 1.7V | 1.4mm | 17mm | 15mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27W801-100N6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 32 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | M27W801 | 32 | R-PDSO-G32 | 3.6V | 3/3.3V | 2.7V | 8Mb 1M x 8 | 100ns | EPROM | Parallel | 1MX8 | 3-STATE | 8 | 8 Mb | 0.000015A | COMMON | 1.2mm | 18.4mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25A512-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~3V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25A512 | 8 | 不合格 | 3V | 1.7V | SPI, Serial | 512Kb 64K x 8 | 8mA | SYNCHRONOUS | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 512 kb | SPI | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | H5TQ2G63BFR-H9C | Hynix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, THIN PROFILE, FINE PITCH | 128000000 | PLASTIC/EPOXY | BGA96,9X16,32 | 未说明 | 20 ns | 85 °C | 有 | H5TQ2G63BFR-H9C | 667 MHz | 134217728 words | 1.5 V | TFBGA | RECTANGULAR | SK Hynix Inc | Obsolete | SK HYNIX INC | 5.79 | BGA | YES | 96 | TFBGA, BGA96,9X16,32 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 96 | R-PBGA-B96 | 不合格 | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.19 mA | 128MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W631GU8KB-12 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 78-TFBGA | YES | Volatile | 0°C~95°C TC | Tray | 2016 | Obsolete | 3 (168 Hours) | 78 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.283V~1.45V | BOTTOM | 未说明 | 1 | 1.35V | 0.8mm | 未说明 | 78 | R-PBGA-B78 | 不合格 | 1.45V | 1.35V | 1.283V | 1Gb 128M x 8 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX8 | 3-STATE | 8 | 1073741824 bit | COMMON | 8192 | 8 | 8 | 1.2mm | 10.5mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA080DT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25AA080D | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FS128SAGNFI100 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FS-S | 活跃 | 3 (168 Hours) | 8 | 1.7V~2V | DUAL | 1 | 1.8V | 1.27mm | 1.8V | 2V | 1.7V | SPI, Serial | 128Mb 16M x 8 | 90mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O, QPI | 32MX4 | 4 | 1b | 128 Mb | Synchronous | 8b | 2 | 6mm | 无 | ROHS3 Compliant |