类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 逻辑功能 | 内存格式 | 内存接口 | 建筑学 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 时间格式 | 页面尺寸 | 准备就绪/忙碌 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 产品类别 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||
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![]() | 11LC010T-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC010 | 8 | 5V | Serial | 1Kb 128 x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 1 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT25040YI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | CAT25040 | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 2mA | 20MHz | 75 ns | EEPROM | SPI | 无卤素 | 8 | 5ms | 4 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY14B101NA-ZS45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e4 | 活跃 | 3 (168 Hours) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B101 | 44 | 不合格 | 3V | 3.6V | 2.7V | 1Mb 64K x 16 | 52mA | ASYNCHRONOUS | Clock | NVSRAM | Parallel | 16b | 64KX16 | 16 | 45ns | 1 Mb | 0.005A | 45 ns | 16b | HH:MM:SS | 1.194mm | 18.415mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11LC010T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11LC010 | 8 | 5V | Serial | 1Kb 128 x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 1 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25V512EZUI-13G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | 不用于新设计 | 3 (168 Hours) | 8 | MATTE TIN (800) | 2.35V~3.6V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | 8 | R-PDSO-N8 | 不合格 | 3.6V | 2.5/3.3V | 2.35V | SPI, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 75MHz | FLASH | SPI | 256KX2 | 2 | 50μs, 1ms | 512 kb | 0.00001A | 3.3V | SPI | 100000000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 0.6mm | 3mm | 2mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11LC080T-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC080 | 8 | 5V | Serial | 8Kb 1K x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 8 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC46CT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 0.5mm | 40 | 93LC46C | 不合格 | 3/5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 64X16 | 16 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 8 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MB85R4001ANC-GE1 | Fujitsu Electronics America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 48-TFSOP (0.488, 12.40mm Width) | 48 | 48-TSOP | Non-Volatile | -40°C~85°C TA | Tray | 2015 | 不用于新设计 | 1 (Unlimited) | 85°C | -40°C | 3V~3.6V | Parallel | 3.6V | 3V | 4Mb 512K x 8 | 150ns | FRAM | Parallel | 150ns | Unknown | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR24L64-W | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Copper, Tin | 表面贴装 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e2 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 2.54mm | 10 | BR24L64 | 8 | 不合格 | 5V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 400kHz | 3.5 μs | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 3.7mm | 9.3mm | 7.62mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25PF040CT-40V/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, SST25 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.3V~3.6V | DUAL | 1 | 3.3V | 1.27mm | SST25PF040C | R-PDSO-G8 | 3.6V | 2.3V | 4Mb 512K x 8 | SYNCHRONOUS | 40MHz | 0.015mA | FLASH | SPI | 4MX1 | 1 | 5ms | 0.00001A | 4194304 bit | SERIAL | 3.3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25VF080B-50-4I-QAE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | SST25 | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 1.27mm | SST25VF080B | 3.3V | 3.6V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 50MHz | FLASH | SPI | 1 | 10μs | 8 Mb | 2.7V | 6mm | 5mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LCS52T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~5.5V | DUAL | 0.5mm | 24LCS52 | 不合格 | 2.5/5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 200 | HARDWARE/SOFTWARE | 1010DDDR | 750μm | 2mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA86/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA86 | 8 | 6V | 2/5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 3 μs | EEPROM | SPI | 1KX16 | 3-STATE | 16 | 5ms | 16 kb | 0.00003A | TS 16949 | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302TT07E-400I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 400 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | DDR-II | Industrial grade | SRAM | BGA-165 | 400 MHz | -40 to 100 °C | Tray | GS81302TT07E | SigmaDDR-II+ B2 | Memory & Data Storage | 165 | 144 Mbit | 1 | 905 mA | Pipelined | 16 M x 8 | 23 Bit | 144 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAV25640VP2E-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M93C66-RDW3TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 2.5V | 0.65mm | M93C66 | 5.5V | Serial | 4Kb 512 x 8 256 x 16 | 2MHz | 200 ns | EEPROM | SPI | 5ms | 4 kb | MICROWIRE | 4ms | 1.05mm | 4.5mm | 3.1mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PCF8594C-2T/02,112 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 1998 | e4 | Obsolete | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.71 | 2.5V~6.0V | DUAL | 260 | 1 | 3.3V | 1.27mm | 30 | PCF8594 | 8 | R-PDSO-G8 | 不合格 | 6V | 3/5V | 2.5V | 4Kb 512 x 8 | SYNCHRONOUS | 100kHz | 0.0008mA | EEPROM | I2C | 512X8 | 8 | 0.0000035A | 4096 bit | SERIAL | I2C | 1000000 Write/Erase Cycles | 10ms | 10 | HARDWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 11LC161-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11LC161 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | Serial | 16Kb 2K x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL512P12FFIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-P | e1 | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 1.8/3.33/3.3V | 2.7V | 512Mb 32M x 16 | 110mA | FLASH | Parallel | 8b | 512MX1 | 1 | 120ns | 512 Mb | 0.000005A | 120 ns | Asynchronous | 3V | 8 | YES | YES | YES | 512 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR34E02NUX-3TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2013 | Discontinued | 1 (Unlimited) | 8 | EAR99 | 8542.32.00.51 | 1.7V~3.6V | DUAL | 未说明 | 1 | 0.5mm | 未说明 | 8 | R-PDSO-N8 | 不合格 | 5.5V | 1.8/5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 256X8 | 8 | 5ms | 0.000002A | 2048 bit | I2C | 5ms | HARDWARE/SOFTWARE | 0110DDDR/1010DDDR | 0.6mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25SF041-XMHD-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 8 | 2.5V~3.6V | DUAL | 未说明 | 1 | 3V | 0.65mm | 未说明 | R-PDSO-G8 | 3.6V | 2.5V | 4Mb 512K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 4MX1 | 1 | 5μs, 2.5ms | 4194304 bit | SERIAL | 2.7V | SPI | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28HC256-12DM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 28-CDIP (0.600, 15.24mm) | NO | Non-Volatile | -55°C~125°C TC | Tube | 1997 | e0 | 活跃 | 1 (Unlimited) | 28 | 3A001.A.2.C | TIN/LEAD (SN/PB) | 自动写入 | 8542.32.00.51 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | 未说明 | AT28HC256 | R-GDIP-T28 | 不合格 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 120ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V016SA10PH | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 3.15V~3.6V | IDT71V016 | 1Mb 64K x 16 | SRAM | Parallel | 10ns | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT93C46XI-T2 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | LAST SHIPMENTS (Last Updated: 4 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | CAT93C46 | 8 | 5V | Serial | 1Kb 128 x 8 64 x 16 | 1mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 无卤素 | 16 | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 1ms | 100 | SOFTWARE | 8 | 2.03mm | 5.255mm | 5.23mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93H86RFJ-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 16Kb 1K x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 1KX16 | 16 | 4ms | 0.00001A | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant |